No Arabic abstract
Recent experiments have measured the signatures of the Kondo effect in the zero-field thermopower of strongly correlated quantum dots [Svilans {em et al.,} Phys. Rev. Lett. {bf 121}, 206801 (2018); Dutta {em et al.,} Nano Lett. {bf 19}, 506 (2019)]. They confirm the predicted Kondo-induced sign change in the thermopower, upon increasing the temperature through a gate-voltage dependent value $T_{1}gtrsim T_{rm K}$, where $T_{rm K}$ is the Kondo temperature. Here, we use the numerical renormalization group (NRG) method to investigate the effect of a finite magnetic field $B$ on the thermopower of such quantum dots. We show that, for fields $B$ exceeding a gate-voltage dependent value $B_{0}$, an additional sign change takes place in the Kondo regime at a temperature $T_{0}(Bgeq B_{0})>0$ with $T_0<T_1$. The field $B_{0}$ is comparable to, but larger than, the field $B_{c}$ at which the zero-temperature spectral function splits in a magnetic field. The validity of the NRG results for $B_{0}$ are checked by comparison with asymptotically exact higher-order Fermi-liquid calculations [Oguri {em et al.,} Phys. Rev. B {bf 97}, 035435 (2018)]. Our calculations clarify the field-dependent signatures of the Kondo effect in the thermopower of Kondo-correlated quantum dots and explain the recently measured trends in the $B$-field dependence of the thermoelectric response of such systems [Svilans {em et al.,} Phys. Rev. Lett. {bf 121}, 206801 (2018)].
Signatures of the Kondo effect in the electrical conductance of strongly correlated quantum dots are well understood both experimentally and theoretically, while those in the thermopower have been the subject of recent interest. Here, we extend theoretical work [T. A. Costi, Phys. Rev. B {bf 100}, 161106(R) (2019)] on the field-dependent thermopower of such systems, and carry out calculations in order to address a recent experiment on the field dependent thermoelectric response of Kondo-correlated quantum dots [A. Svilans {em et al.,} Phys. Rev. Lett. {bf 121}, 206801 (2018)]. In addition to the sign changes in the thermopower at temperatures $T_1(B)$ and $T_2(B)$ (present also for $B=0$) in the Kondo regime, an additional sign change was found [T. A. Costi, Phys. Rev. B {bf 100}, 161106(R) (2019)] at a temperature $T_0(B)<T_1(B)<T_2(B)$ for fields exceeding a gate-voltage dependent value $B_0$, where $B_0$ is comparable to, but larger, than the field $B_c$ at which the Kondo resonance splits. We describe the evolution of the Kondo-induced sign changes in the thermopower at temperatures $T_0(B),T_1(B)$ and $T_2(B)$ with magnetic field and gate voltage from the Kondo regime to the mixed valence and empty orbital regimes. By carrying out detailed NRG calculations for the above quantities we address the recent experiment by A. Svilans {em et al.,} Phys. Rev. Lett. {bf 121}, 206801 (2018), which measures the field-dependent thermoelectric response of InAs quantum dots exhibiting the Kondo effect, finding good agreement for the overall trends in the measured field- and temperature-dependent thermoelectric response as a function of gate voltage.
By means of sequential and cotunneling spectroscopy, we study the tunnel couplings between metallic leads and individual levels in a carbon nanotube quantum dot. The levels are ordered in shells consisting of two doublets with strong- and weak-tunnel couplings, leading to gate-dependent level renormalization. By comparison to a one- and two-shell model, this is shown to be a consequence of disorder-induced valley mixing in the nanotube. Moreover, a parallel magnetic field is shown to reduce this mixing and thus suppress the effects of tunnel renormalization.
Using renormalized perturbation theory in the Coulomb repulsion, we derive an analytical expression for the leading term in the temperature dependence of the conductance through a quantum dot described by the impurity Anderson model, in terms of the renormalized parameters of the model. Taking these parameters from the literature, we compare the results with published ones calculated using the numerical renormalization group obtaining a very good agreement. The approach is superior to alternative perturbative treatments. We compare in particular to the results of a simple interpolative perturbation approach.
We study the possibility to observe the two channel Kondo physics in multiple quantum dot heterostructures in the presence of magnetic field. We show that a fine tuning of the coupling parameters of the system and an external magnetic field may stabilize the two channel Kondo critical point. We make predictions for behavior of the scaling of the differential conductance in the vicinity of the quantum critical point, as a function of magnetic field, temperature and source-drain potential.
We study nonequilibrium thermoelectric transport properties of a correlated impurity connected to two leads for temperatures below the Kondo scale. At finite bias, for which a current flows across the leads, we investigate the differential response of the current to a temperature gradient. In particular, we compare the influence of a bias voltage and of a finite temperature on this thermoelectric response. This is of interest from a fundamental point of view to better understand the two different decoherence mechanisms produced by a bias voltage and by temperature. Our results show that in this respect the thermoelectric response behaves differently from the electric conductance. In particular, while the latter displays a similar qualitative behavior as a function of voltage and temperature, both in theoretical and experimental investigations, qualitative differences occur in the case of the thermoelectric response. In order to understand this effect, we analyze the different contributions in connection to the behavior of the impurity spectral function versus temperature. Especially in the regime of strong interactions and large enough bias voltages we obtain a simple picture based on the asymmetric suppression or enhancement of the split Kondo peaks as a function of the temperature gradient. Besides the academic interest, these studies could additionally provide valuable information to assess the applicability of quantum dot devices as responsive nanoscale temperature sensors.