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Register a new userPreparing squeezed spin states in a spin-mechanical hybrid system with silicon-vacancy centers
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We present and analyze an effective scheme for preparing squeezed spin states in a novel spin-mechanical hybrid device, which is realized by a single crystal diamond waveguide with built-in silicon-vacancy (SiV) centers. After studying the strain couplings between the SiV spins and the propagating phonon modes, we show that long-range spin-spin interactions can be achieved under large detuning condition. We model these nonlinear spin-spin couplings with an effective one-axis twisting Hamiltonian, and find that the system can be steered to the squeezed spin states in the practical situations. This work may have interesting applications in high-precision metrology and quantum information.
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Silicon carbide (SiC) hosts many interesting defects that can potentially serve as qubits for a range of advanced quantum technologies. Some of them have very interesting properties, making them potentially useful, e.g. as interfaces between stationary and flying qubits. Here we present a detailed overview of the relevant properties of the spins in silicon vacancies of the 6H-SiC polytype. This includes the temperature-dependent photoluminescence, optically detected magnetic resonance, and the relaxation times of the longitudinal and transverse components of the spins, during free precession as well as under the influence of different refocusing schemes.
Silicon vacancies in silicon carbide have been proposed as an alternative to nitrogen vacancy centers in diamonds for spintronics and quantum technologies. An important precondition for these applications is the initialization of the qubits into a specific quantum state. In this work, we study the optical alignment of the spin 3/2 negatively charged silicon vacancy in 6H-SiC. Using a time-resolved optically detected magnetic resonance technique, we coherently control the silicon vacancy spin ensemble and measure Rabi frequencies and spin-lattice relaxation time of all three transitions. Then to study the optical initialization process of the silicon vacancy spin ensemble, the vacancy spin ensemble is prepared in different ground states and optically excited. We describe a simple rate equation model that can explain the observed behaviour and determine the relevant rate constants.
We report the design and fabrication of diamond spin-mechanical resonators embedded in a two-dimensional (2D) phononic crystal square lattice. The rectangular resonator features GHz in-plane compression modes protected by the phononic band gap of the square lattice. A membrane-in-bulk approach is developed for the fabrication of the suspended 2D structure. This approach overcomes the limitations of the existing approaches, which are either incompatible with the necessary high-temperature thermal annealing or unsuitable for 2D structures with the required feature size. Graded soft oxygen etching, with the etching rate decreased gradually to below 1 nm/minute, is used to remove defective surface layers damaged by reactive ion etching. Combining the graded etching with other established surface treatment techniques reduces the optical linewidth of nitrogen vacancy centers in resonators with a thickness below 1 micron to as narrow as 330 MHz.
We demonstrate an all-optical thermometer based on an ensemble of silicon-vacancy centers (SiVs) in diamond by utilizing a temperature dependent shift of the SiV optical zero-phonon line transition frequency, $Deltalambda/Delta T= 6.8,mathrm{GHz/K}$. Using SiVs in bulk diamond, we achieve $70,mathrm{mK}$ precision at room temperature with a sensitivity of $360,mathrm{mK/sqrt{Hz}}$. Finally, we use SiVs in $200,mathrm{nm}$ nanodiamonds as local temperature probes with $521,mathrm{ mK/sqrt{Hz}}$ sensitivity. These results open up new possibilities for nanoscale thermometry in biology, chemistry, and physics, paving the way for control of complex nanoscale systems.
We present systematic measurements of longitudinal relaxation rates ($1/T_1$) of spin polarization in the ground state of the nitrogen-vacancy (NV$^-$) color center in synthetic diamond as a function of NV$^-$ concentration and magnetic field $B$. NV$^-$ centers were created by irradiating a Type 1b single-crystal diamond along the [100] axis with 200 keV electrons from a transmission electron microscope with varying doses to achieve spots of different NV$^-$ center concentrations. Values of ($1/T_1$) were measured for each spot as a function of $B$.
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