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Register a new userImmunity of nanoscale magnetic tunnel junctions to ionizing radiation
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Spin transfer torque magnetic random access memory (STT-MRAM) is a promising candidate for next generation memory as it is non-volatile, fast, and has unlimited endurance. Another important aspect of STT-MRAM is that its core component, the nanoscale magnetic tunneling junction (MTJ), is thought to be radiation hard, making it attractive for space and nuclear technology applications. However, studies of the effects of high doses of ionizing radiation on STT-MRAM writing process are lacking. Here we report measurements of the impact of high doses of gamma and neutron radiation on nanoscale MTJs with perpendicular magnetic anistropy used in STT-MRAM. We characterize the tunneling magnetoresistance, the magnetic field switching, and the current-induced switching before and after irradiation. Our results demonstrate that all these key properties of nanoscale MTJs relevant to STT-MRAM applications are robust against ionizing radiation. Additionally, we perform experiments on thermally driven stochastic switching in the gamma ray environment. These results indicate that nanoscale MTJs are promising building blocks for radiation-hard non-von Neumann computing.
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Nanoscale magnetic tunnel junction plays a pivotal role in magnetoresistive random access memories. Successful implementation depends on a simultaneous achievement of low switching current for the magnetization switching by spin-transfer torque and high thermal stability, along with a continuous reduction of junction size. Perpendicular-easy-axis CoFeB/MgO stacks possessing interfacial anisotropy have paved the way down to 20-nm scale, below which a new approach needs to be explored. Here we show magnetic tunnel junctions that satisfy the requirements at ultrafine scale by revisiting shape anisotropy, which is a classical part of magnetic anisotropy but has not been fully utilized in the current perpendicular systems. Magnetization switching solely driven by current is achieved for junctions smaller than 10 nm where sufficient thermal stability is provided by shape anisotropy without adopting new material systems. This work is expected to push forward the development of magnetic tunnel junctions towards single-digit-nm-scale nano-magnetics/spintronics.
Temperature plays an important role in spin torque switching of magnetic tunnel junctions causing magnetization fluctuations that decrease the switching voltage but also introduce switching errors. Here we present a systematic study of the temperature dependence of the spin torque switching probability of state-of-the-art perpendicular magnetic tunnel junction nanopillars (40 to 60 nm in diameter) from room temperature down to 4 K, sampling up to a million switching events. The junction temperature at the switching voltage---obtained from the thermally assisted spin torque switching model---saturates at temperatures below about 75 K, showing that junction heating is significant below this temperature and that spin torque switching remains highly stochastic down to 4 K. A model of heat flow in a nanopillar junction shows this effect is associated with the reduced thermal conductivity and heat capacity of the metals in the junction.
The magnetic stray field is an unavoidable consequence of ferromagnetic devices and sensors leading to a natural asymmetry in magnetic properties. Such asymmetry is particularly undesirable for magnetic random access memory applications where the free layer can exhibit bias. Using atomistic dipole-dipole calculations we numerically simulate the stray magnetic field emanating from the magnetic layers of a magnetic memory device with different geometries. We find that edge effects dominate the overall stray magnetic field in patterned devices and that a conventional synthetic antiferromagnet structure is only partially able to compensate the field at the free layer position. A granular reference layer is seen to provide near-field flux closure while additional patterning defects add significant complexity to the stray field in nanoscale devices. Finally we find that the stray field from a nanoscale antiferromagnet is surprisingly non-zero arising from the imperfect cancellation of magnetic sublattices due to edge defects. Our findings provide an outline of the role of different layer structures and defects in the effective stray magnetic field in nanoscale magnetic random access memory devices and atomistic calculations provide a useful tools to study the stray field effects arising from a wide range of defects.
A method to perform spectrum analysis on low power signals between 0.1 and 10 THz is proposed. It utilizes a nanoscale antiferromagnetic tunnel junction (ATJ) that produces an oscillating tunneling anisotropic magnetoresistance, whose frequency is dependent on the magnitude of an evanescent spin current. It is first shown that the ATJ oscillation frequency can be tuned linearly with time. Then, it is shown that the ATJ output is highly dependent on matching conditions that are highly dependent on the dimensions of the dielectric tunneling barrier. Spectrum analysis can be performed by using an appropriately designed ATJ, whose frequency is driven to increase linearly with time, a low pass filter, and a matched filter. This method of THz spectrum analysis, if realized in experiment, will allow miniaturized electronics to rapidly analyze low power signals with a simple algorithm. It is also found by simulation and analytical theory that for an ATJ with a 0.09 $mu$m$^2$ footprint, spectrum analysis can be performed over a 0.25 THz bandwidth in just 25 ns on signals that are at the Johnson-Nyquist thermal noise floor.
Voltage-induced ferromagnetic resonance (V-FMR) in magnetic tunnel junctions (MTJs) with a W buffer is investigated. Perpendicular magnetic anisotropy (PMA) energy is controlled by both thickness of a CoFeB free layer deposited directly on the W buffer and a post-annealing process at different temperatures. The PMA energy as well as the magnetization damping are determined by analysing field-dependent FMR signals in different field geometries. An optimized MTJ structure enabled excitation of V-FMR at frequencies exceeding 30 GHz. The macrospin modelling is used to analyse the field- and angular-dependence of the V-FMR signal and to support experimental magnetization damping extraction.
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