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The investigation of two-level-state (TLS) loss in dielectric materials and interfaces remains at the forefront of materials research in superconducting quantum circuits. We demonstrate a method of TLS loss extraction of a thin film dielectric by measuring a lumped element resonator fabricated from a superconductor-dielectric-superconductor trilayer. We extract the dielectric loss by formulating a circuit model for a lumped element resonator with TLS loss and then fitting to this model using measurements from a set of three resonator designs: a coplanar waveguide resonator, a lumped element resonator with an interdigitated capacitor, and a lumped element resonator with a parallel plate capacitor that includes the dielectric thin film of interest. Unlike other methods, this allows accurate measurement of materials with TLS loss lower than $10^{-6}$. We demonstrate this method by extracting a TLS loss of $1.02 times 10^{-3}$ for sputtered $mathrm{Al_2O_3}$ using a set of samples fabricated from an $mathrm{Al/Al_2O_3/Al}$ trilayer. We observe a difference of 11$%$ between extracted loss of the trilayer with and without the implementation of this method.
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The performance of superconducting circuits for quantum computing is limited by materials losses. In particular, coherence times are typically bounded by two-level system (TLS) losses at single photon powers and millikelvin temperatures. The identification of low loss fabrication techniques, materials, and thin film dielectrics is critical to achieving scalable architectures for superconducting quantum computing. Superconducting microwave resonators provide a convenient qubit proxy for assessing performance and studying TLS loss and other mechanisms relevant to superconducting circuits such as non-equilibrium quasiparticles and magnetic flux vortices. In this review article, we provide an overview of considerations for designing accurate resonator experiments to characterize loss, including applicable types of loss, cryogenic setup, device design, and methods for extracting material and interface losses, summarizing techniques that have been evolving for over two decades. Results from measurements of a wide variety of materials and processes are also summarized. Lastly, we present recommendations for the reporting of loss data from superconducting microwave resonators to facilitate materials comparisons across the field.
Lossy dielectrics are a significant source of decoherence in superconducting quantum circuits. In this report, we model and compare the dielectric loss in bulk and interfacial dielectrics in titanium nitride (TiN) and aluminum (Al) superconducting coplanar waveguide (CPW) resonators. We fabricate isotropically trenched resonators to produce a series of device geometries that accentuate a specific dielectric regions contribution to resonator quality factor. While each dielectric region contributes significantly to loss in TiN devices, the metal-air interface dominates the loss in the Al devices. Furthermore, we evaluate the quality factor of each TiN resonator geometry with and without a post-process hydrofluoric (HF) etch, and find that it reduced losses from the substrate-air interface, thereby improving the quality factor.
We perform a quantum mechanical analysis of superconducting resonators subject to dielectric loss arising from charged two-level systems. We present numerical and analytical descriptions of the dynamics of energy decay from the resonator within the Jaynes-Cummings model. Our analysis allows us to distinguish the strong and weak coupling regimes of the model and to describe within each regime cases where the two-level system is unsaturated or saturated. We find that the quantum theory agrees with the classical model for weak coupling. However, for strong coupling the quantum theory predicts lower loss than the classical theory in the unsaturated regime. Also, in contrast to the classical theory, the photon number at which saturation occurs in the strong coupling quantum theory is independent of the coupling between the resonator and the two-level system.
Surface distributions of two level system (TLS) defects and magnetic vortices are limiting dissipation sources in superconducting quantum circuits. Arrays of flux-trapping holes are commonly used to eliminate loss due to magnetic vortices, but may increase dielectric TLS loss. We find that dielectric TLS loss increases by approximately 25% for resonators with a hole array beginning 2 $mu text{m}$ from the resonator edge, while the dielectric loss added by holes further away was below measurement sensitivity. Other forms of loss were not affected by the holes. Additionally, we estimate the loss due to residual magnetic effects to be $9times 10^{-10} /mutext{T} $ for resonators patterned with flux-traps and operated in magnetic fields up to $5$ $mutext{T}$. This is orders of magnitude below the total loss of the best superconducting coplanar waveguide resonators.
In quantum computing architectures, one important factor is the trade-off between the need to couple qubits to each other and to an external drive and the need to isolate them well enough in order to protect the information for an extended period of time. In the case of superconducting circuits, one approach is to utilize fixed frequency qubits coupled to coplanar waveguide resonators such that the system can be kept in a configuration that is relatively insensitive to noise. Here, we propose a scalable voltage-tunable quantum memory (QuMem) design concept compatible with superconducting qubit platforms. Our design builds on the recent progress in fabrication of Josephson field effect transistors (JJ-FETs) which use InAs quantum wells. The JJ-FET is incorporated into a tunable coupler between a transmission line and a high-quality resonator in order to control the overall inductance of the coupler. A full isolation of the high-quality resonator can be achieved by turning off the JJ-FET. This could allow for long coherence times and protection of the quantum information inside the storage cavity. The proposed design would facilitate the implementation of random access memory for storage of quantum information in between computational gate operations.
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