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Register a new userPressure-induced topological phase transition in noncentrosymmetric elemental Tellurium
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Recent progress in understanding the electronic band topology and emergent topological properties encourage us to reconsider the band structure of well-known materials including elemental substances. Controlling such a band topology by external field is of particular interest from both fundamental and technological view point. Here we report the pressure-induced topological phase transition from a semiconductor to a Weyl semimetal in elemental tellurium probed by transport measurements. Pressure variation of the periods of Shubnikov-de Haas oscillations, as well as oscillations phases, shows an anomaly around the pressure theoretically predicted for topological phase transition. This behavior can be well understood by the pressure-induced band deformation and resultant band crossing effect. Moreover, effective cyclotron mass is reduced toward the critical pressure, potentially reflecting the emergence of massless linear dispersion. The present result paves the way for studying the electronic band topology in well-known compounds and topological phase transition by the external field.
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We performed X-ray diffraction and electrical resistivity measurement up to pressures of 5 GPa and the first-principles calculations utilizing experimental structural parameters to investigate the pressure-induced topological phase transition in BiTeBr having a noncentrosymmetric layered structure (space group P3m1). The P3m1 structure remains stable up to pressures of 5 GPa; the ratio of lattice constants, c/a, has a minimum at pressures of 2.5 - 3 GPa. In the same range, the temperature dependence of resistivity changes from metallic to semiconducting at 3 GPa and has a plateau region between 50 and 150 K in the semiconducting state. Meanwhile, the pressure variation of band structure shows that the bulk band-gap energy closes at 2.9 GPa and re-opens at higher pressures. Furthermore, according to the Wilson loop analysis, the topological nature of electronic states in noncentrosymmetric BiTeBr at 0 and 5 GPa are explicitly revealed to be trivial and non-trivial, respectively. These results strongly suggest that pressure-induced topological phase transition in BiTeBr occurs at the pressures of 2.9 GPa.
We investigate the possibility of using structural disorder to induce a topological phase in a solid state system. Using first-principles calculations, we introduce structural disorder in the trivial insulator BiTeI and observe the emergence of a topological insulating phase. By modifying the bonding environments, the crystal-field splitting is enhanced and the spin-orbit interaction produces a band inversion in the bulk electronic structure. Analysis of the Wannier charge centers and the surface electronic structure reveals a strong topological insulator with Dirac surface states. Finally, we propose a prescription for inducing topological states from disorder in crystalline materials. Understanding how local environments produce topological phases is a key step for predicting disordered and amorphous topological materials.
We report the pressure (p_max = 1.5 GPa) evolution of the crystal structure of the Weyl semimetal T_d-MoTe_2 by means of neutron diffraction experiments. We find that the fundamental non-centrosymmetric structure T_d is fully suppressed and transforms into a centrosymmertic 1T structure at a critical pressure of p_cr = 1.2 GPa. This is strong evidence for a pressure induced quantum phase transition (QPT) between topological to a trivial electronic state. Although the topological QPT has strong effect on magnetoresistance, it is interesting that the superconducting critical temperature T_c, the superfluid density, and the SC gap all change smoothly and continuously across p_cr and no sudden effects are seen concomitantly with the suppression of the T_d structure. This implies that the T_c, and thus the SC pairing strength, is unaffected by the topological QPT. However, the QPT requires the change in the SC gap symmetry from non-trivial s+- to a trivial s++ state, which we discuss in this work. Our systematic characterizations of the structure and superconducting properties associated with the topological QPT provide deep insight into the pressure induced phase diagram in this topological quantum material.
The interplay between various symmetries and electronic bands topology is one of the core issues for topological quantum materials. Spontaneous magnetism, which leads to the breaking of time-reversal symmetry, has been proven to be a powerful approach to trigger various exotic topological phases. In this work, utilizing the combination of angle-resolved photoemission spectroscopy, magneto-optical Kerr effect microscopy and first-principles calculations, we present the direct evidence on the realization of the long-sought spontaneous time-reversal symmetry breaking induced topological phase transition in soft ferromagnetic EuB$_6$. We successfully disentangle the bulk band structure from complicated surface states, and reveal the hallmark band inversion occurring between two opposite-parity bulk bands below the phase transition temperature. Besides, our magneto-optical Kerr effect microscopy result confirms the simultaneous formation of magnetic domains in EuB$_6$, implying the intimate link between the topological phase transition and broken time-reversal symmetry therein. Our results demonstrate that EuB$_6$ provides a potential platform to study the interplay between the topological phases and tunable magnetic orders.
The recent discovery of Weyl fermions in solids enables exploitation of relativistic physics and development of a spectrum of intriguing physical phenomena. They are constituted of pairs of Weyl points with two-fold band degeneracy, which in principle can be hosted in any materials without inversion or time-reversal symmetry. However, previous studies of Weyl fermions have been limited exclusively to semimetals. Here, by combining magneto-transport measurements, angle-resolved photoemission spectroscopy, and band structure calculations, Weyl fermions are identified in an elemental semiconductor tellurium. This is mainly achieved by direct observation of the representative transport signatures of the chiral anomaly, including the negative longitudinal magnetoresistance and the planar Hall effect. Semiconductor materials are well suited for band engineering, and therefore provide an ideal platform for manipulating the fundamental Weyl fermionic behaviors. Furthermore, introduction of Weyl physics into semiconductors to develop Weyl semiconductors also creates a new degree of freedom for the future design of semiconductor electronic and optoelectronic devices.
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