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Register a new userEnhancement of the upper critical field in the cubic Laves-phase superconductor HfV$_{2}$ by Nb doping
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We report the effect of Nb doping on the upper critical field of the cubic Laves-phase superconductor HfV$_{2}$ studied in a series of HfV$_{2-x}$Nb$_{x}$ samples with 0 $leq$ $x$ $leq$ 0.3 under pulsed fields up to 30 T. The undoped HfV$_{2}$ undergoes a martensitic structural transition around 110 K, and becomes superconducting below $T_{rm c}$ = 9.4 K. Upon Nb doping, while the structural transition is suppressed for $x$ $geq$ 0.1, a maximum in $T_{rm c}$ of 10.1 K and zero-temperature upper critical field $B_{rm c2}$(0) of 22.4 T is found at $x$ = 0.2, which is ascribed to an increase of the density of states at the Fermi level. For all samples, the temperature dependence of $B_{rm c2}$ can be well described by the Werthamer-Helfand-Hohenberg (WHH) theory that takes into account both the spin paramagnetic effect and spin orbit scattering. In addition, a comparison is made between the $B_{rm c2}$ behavior of HfV$_{2-x}$Nb$_{x}$ and those of Nb-Ti and Nb$_{3}$Sn.
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Doping of MgB2 by nano-SiC and its potential for improvement of flux pinning was studied for MgB2-x(SiC)x/2 with x = 0, 0.2 and 0.3 and a 10wt% nano-SiC doped MgB2 samples. Co-substitution of B by Si and C counterbalanced the effects of single-element doping, decreasing Tc by only 1.5K, introducing pinning centres effective at high fields and temperatures and enhancing Jc and Hirr significantly. Compared to the non-doped sample, Jc for the 10wt% doped sample increased by a factor of 32 at 5K and 8T, 42 at 20K and 5T, and 14 at 30K and 2T. At 20K, which is considered to be a benchmark operating temperature for MgB2, the best Jc for the doped sample was 2.4x10^5A/cm2 at 2T, which is comparable to Jc of the best Ag/Bi-2223 tapes. At 20K and 4T, Jc was 36,000A/cm2, which was twice as high as for the best MgB2 thin films and an order of magnitude higher than for the best Fe/MgB2 tapes. Because of such high performance, it is anticipated that the future MgB2 conductors will be made using the formula of MgBxSiyCz instead of the pure MgB2.
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Nb3Sn was prepared by milling Nb and Sn powder mixtures followed by limited reactions to restrict disorder recovery. Although disorder reduced the superconducting critical temperature Tc, the concomitant electron scattering increased the upper critical field mu0Hc2 to as high as 35 T at 0 K, as determined by the Werthamer-Helfand-Hohenberg equation. Hc2 was higher for longer milling times and lower annealing temperatures. Substitution of 2% Ti for Nb did not appreciably enhance Hc2, suggesting that alloying mitigates the benefits of disorder. Since alloyed Nb3Sn wires have mu0Hc2(0) approximately 29 T, wires based on heavily milled powders could extend the field range for applications if they can be made with high current density.
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