No Arabic abstract
The concept of quantum memory plays an incisive role in the quantum information theory. As confirmed by several recent rigorous mathematical studies, the quantum memory inmate in the bipartite system $rho_{AB}$ can reduce uncertainty about the part $B$, after measurements done on the part $A$. In the present work, we extend this concept to the systems with a spin-orbit coupling and introduce a notion of spin-orbit quantum memory. We self-consistently explore Uhlmann fidelity, pre and post measurement entanglement entropy and post measurement conditional quantum entropy of the system with spin-orbit coupling and show that measurement performed on the spin subsystem decreases the uncertainty of the orbital part. The uncovered effect enhances with the strength of the spin-orbit coupling. We explored the concept of macroscopic realism introduced by Leggett and Garg and observed that POVM measurements done on the system under the particular protocol are non-noninvasive. For the extended system, we performed the quantum Monte Carlo calculations and explored reshuffling of the electron densities due to the external electric field.
Single nuclear spins in the solid state have long been envisaged as a platform for quantum computing, due to their long coherence times and excellent controllability. Measurements can be performed via localised electrons, for example those in single atom dopants or crystal defects. However, establishing long-range interactions between multiple dopants or defects is challenging. Conversely, in lithographically-defined quantum dots, tuneable interdot electron tunnelling allows direct coupling of electron spin-based qubits in neighbouring dots. Moreover, compatibility with semiconductor fabrication techniques provides a compelling route to scaling to large numbers of qubits. Unfortunately, hyperfine interactions are typically too weak to address single nuclei. Here we show that for electrons in silicon metal-oxide-semiconductor quantum dots the hyperfine interaction is sufficient to initialise, read-out and control single silicon-29 nuclear spins, yielding a combination of the long coherence times of nuclear spins with the flexibility and scalability of quantum dot systems. We demonstrate high-fidelity projective readout and control of the nuclear spin qubit, as well as entanglement between the nuclear and electron spins. Crucially, we find that both the nuclear spin and electron spin retain their coherence while moving the electron between quantum dots, paving the way to long range nuclear-nuclear entanglement via electron shuttling. Our results establish nuclear spins in quantum dots as a powerful new resource for quantum processing.
In this Letter, we present a physical scheme for implementing the discrete quantum Fourier transform in a coupled semiconductor double quantum dot system. The main controlled-R gate operation can be decomposed into many simple and feasible unitary transformations. The current scheme would be a useful step towards the realization of complex quantum algorithms in the quantum dot system.
We analyze experimentally and theoretically the transport spectra of a gated lateral GaAs double quantum dot containing two holes. The strong spin-orbit interaction present in the hole subband lifts the Pauli spin blockade and allows to map out the complete spectra of the two-hole system. By performing measurements in both source-drain voltage directions, at different detunings and magnetic fields, we carry out quantitative fitting to a Hubbard two-site model accounting for the tunnel coupling to the leads and the spin-flip relaxation process. We extract the singlet-triplet gap and the magnetic field corresponding to the singlet-triplet transition in the double-hole ground state. Additionally, at the singlet-triplet transition we find a resonant enhancement (in the blockaded direction) and suppression of current (in the conduction direction). The current enhancement stems from the multiple resonance of two-hole levels, opening several conduction channels at once. The current suppression arises from the quantum interference of spin-conserving and spin flipping tunneling processes.
A most fundamental and longstanding goal in spintronics is to electrically tune highly efficient spin injectors and detectors, preferably compatible with nanoscale electronics. Here, we demonstrate all these points using semiconductor quantum dots (QDs), individually spin-polarized by ferromagnetic split-gates (FSGs). As a proof of principle, we fabricated a double QD spin valve consisting of two weakly coupled semiconducting QDs in an InAs nanowire (NW), each with independent FSGs that can be magnetized in parallel or anti-parallel. In tunneling magnetoresistance (TMR) experiments at zero external magnetic field, we find a strongly reduced spin valve conductance for the two anti-parallel configurations, with a single QD polarization of $sim 27%$. The TMR can be significantly improved by a small external field and optimized gate voltages, which results in a continuously electrically tunable TMR between $+80%$ and $-90%$. A simple model quantitatively reproduces all our findings, suggesting a gate tunable QD polarization of $pm 80%$. Such versatile spin-polarized QDs are suitable for various applications, for example in spin projection and correlation experiments in a large variety of nanoelectronics experiments.
A crucial requirement for quantum information processing is the realization of multiple-qubit quantum gates. Here, we demonstrate an electron spin based all-electrical two-qubit gate consisting of single spin rotations and inter-dot spin exchange in a double quantum dot. A partially entangled output state is obtained by the application of the two-qubit gate to an initial, uncorrelated state. We find that the degree of entanglement is controllable by the exchange operation time. The approach represents a key step towards the realization of universal multiple qubit gates.