No Arabic abstract
Thin dielectric elastomers with compliant electrodes exhibit various types of instability under the action of electromechanical loading. Guided by the thermodynamically-based formulation of Fosdick and Tang (J. Elasticity 88, 255-297, 2007), here we provide an energetic perspective on the stability of dielectric elastomers and we highlight the fundamental energetic divide between voltage control and charge control. By using the concept of energy relaxation, we describe wrinkling for neo-Hookean ideal elastomers, and we show that in voltage control wrinkling is stable as long as the tension-extension inequality holds, whereas wrinkling is always stable in charge control. We finally illustrate some examples involving both homogeneous and inhomogeneous deformations, showing that the type and hierarchy of instabilities taking place in dielectric membranes can be tuned by suitable choices of the boundary conditions.
We investigate the influence of curvature and topology on crystalline wrinkling patterns in generic elastic bilayers. Our numerical analysis predicts that the total number of defects created by adiabatic compression exhibits universal quadratic scaling for spherical, ellipsoidal and toroidal surfaces over a wide range of system sizes. However, both the localization of individual defects and the orientation of defect chains depend strongly on the local Gaussian curvature and its gradients across a surface. Our results imply that curvature and topology can be utilized to pattern defects in elastic materials, thus promising improved control over hierarchical bending, buckling or folding processes. Generally, this study suggests that bilayer systems provide an inexpensive yet valuable experimental test-bed for exploring the effects of geometrically induced forces on assemblies of topological charges.
Quantum dots are artificial atoms used for a multitude of purposes. Charge defects are commonly present and can significantly perturb the designed energy spectrum and purpose of the dots. Voltage controlled exchange energy in silicon double quantum dots (DQD) represents a system that is very sensitive to charge position and is of interest for quantum computing. We calculate the energy spectrum of the silicon double quantum dot system using a full configuration interaction that uses tight binding single particle wavefunctions. This approach allows us to analyze atomic scale charge perturbations of the DQD while accounting for the details of the complex momentum space physics of silicon (i.e., valley and valley-orbit physics). We analyze how the energy levels and exchange curves for a DQD are affected by nearby charge defects at various positions relative to the dot, which are consistent with defects expected in the metal-oxide-semiconductor system.
We discuss shape profiles emerging in inhomogeneous growth of squeezed tissues. Two approaches are used simultaneously: i) conformal embedding of two-dimensional domain with hyperbolic metrics into the plane, and ii) a pure energetic consideration based on the minimization of the total energy functional. In the latter case the non-uniformly pre-stressed plate, which models the inhomogeneous two-dimensional growth, is analyzed in linear regime under small stochastic perturbations. It is explicitly demonstrated that both approaches give consistent results for buckling profiles and reveal self-similar behavior. We speculate that fractal-like organization of growing squeezed structure has a far-reaching impact on understanding cell proliferation in various biological tissues.
We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial antiferromagnetism, giant tunneling magnetoresistance, and sharp switching of the perpendicularly-magnetized CoFeB allows sensitive detection of the exchange bias. It is found that the exchange bias field can be isothermally controlled by magnetic fields at low temperatures. More importantly, the exchange bias can also be effectively manipulated by the electric field applied to the MgO barrier due to the voltage-controlled antiferromagnetic anisotropy in this system.
Electrical faults are in most cases dramatic events for magnets, due to the large stored energy which is potentially available to be dissipated at the fault location. After a reminder of the principles of electrostatics in Section 1, the basic mechanisms of conduction and breakdown in dielectrics are summarized in Section 2. Section 3 introduces the types and function of the electrical insulation in magnets, and Section 4 its relevant failure mechanisms. Section 5 deals with ageing and, finally, Section 6 gives some principles for testing. Though the School specifically dealt with warm magnets, for completeness some principles of dielectric insulation for superconducting accelerator magnets are briefly summarized in a dedicated appendix.