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Register a new userExperimental Determination of Proton Hardness Factors at Several Irradiation Facilities
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Added by
Konstantinos Nikolopoulos
Publication date
2019
fields
Physics
and research's language is
English
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The scheduled High Luminosity upgrade of the CERN Large Hadron Collider presents new challenges in terms of radiation hardness. As a consequence, campaigns to qualify the radiation hardness of detector sensors and components are undertaken worldwide. The effects of irradiation with beams of different particle species and energy, aiming to assess displacement damage in semiconductor devices, are communicated in terms of the equivalent 1 MeV neutron fluence, using the hardness factor for the conversion. In this work, the hardness factors for protons at three different kinetic energies have been measured by analysing the I-V and C-V characteristics of reverse biased diodes, pre- and post-irradiation. The sensors were irradiated at the MC40 Cyclotron of the University of Birmingham, the cyclotron at the Karlsruhe Institute of Technology, and the IRRAD proton facility at CERN, with the respective measured proton hardness factors being: 2.1 +/- 0.5 for 24 MeV, 2.2 +/- 0.4 for 23 MeV, and 0.62 +/- 0.04 for 23 GeV. The hardness factors currently used in these three facilities are in agreement with the presented measurements.
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This paper presents the results of the proton irradiation of silicon photomulipliers (SiPMs) by mono-energetic 170 MeV protons with fluence up to 4.6$times$10$^{9}$ particles/cm$^2$. In our work, three types of silicon photodetectors from Hamamatsu with areas 3$times$3 mm$^2$ and different subpixel sizes of 25$times$25 $mu$m$^2$, 50$times$50 $mu$m$^2$, and 75$times$75 $mu$m$^2$ were used. The changes in the SiPM dark count rate (DCR) spectrum before and after irradiation in temperatures in the range of 20 $^circ$C to -65 $^circ$C are presented. The influence of the DCR changes on the energy resolution of the 662 keV gamma line from the $^{137}$Cs for a non-irradiated GAGG:Ce (1$%$) scintillator is investigated. The time period of usability of the SiPM detector irradiated by protons in cosmic space was estimated.
This paper presents the results of neutron flux measurements at two irradiation facilities of the TRIGA Mark II reactor at ENEA Casaccia Research Center, Italy. The goal of these measurements is to provide a complete characterization of neutron irradiation facilities for accurate and precise dose evaluation in radiation damage tests and, more generally, for all applications that need a good knowledge of neutron flux in terms of intensity, energy spectrum and spatial distribution. The neutron activation technique is used to measure the activation rates of several reactions, chosen so to cover the whole energy range of neutron flux spectrum. A multi-group neutron flux measurement is obtained through an unfolding algorithm based on a Bayesian statistical model. The obtained results prove that this experimental method allows to measure the total neutron flux within 2% statistical uncertainty, and to get at the same time a good description of its energy spectrum and spatial distribution.
In this work we study the performance of silicon photomultiplier (SiPM) light sensors after exposure to the JULIC cyclotron proton beam, of energy $sim$ 39 MeV, relative to their performance before exposure. The SiPM devices used in this study show a significant change in their behavior and downward shift of their breakdown voltage by as much as $sim$ 0.4$pm$0.1 V. Single photon measurements appear to be no longer possible for the SiPMs under study after exposure to a dose of $sim$ 0.2 Gy (corresponding to an integrated proton flux of $sim$$phi_{p}$=1.06x10$^{8}$ p/cm$^{2}$). No visible damage to the surface of the devices was caused by the exposure.
In Japan, China and Russia, there are several test beam lines available or will become available in near future. Those are open for users who need electron, muon and charged pion beams with energies of 1-50 GeV for any tests of small-size detectors. In this manuscript I present a current status of those test beam facilities in the Asian region.
The properties of 60-{mu}m thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation with minimum ionizing particles (MIPs) from a 90Sr b{eta}-source . This FBK production, called UFSD2, has UFSDs with gain layer made of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated. The irradiation with neutrons took place at the TRIGA reactor in Ljubljana, while the proton irradiation took place at CERN SPS. The sensors were exposed to a neutron fluence of 4*10e14, 8*1014, 1.5*10e15, 3*10e15, 6*10e15 neq/cm2 and to a proton fluence of 9.6*10e14 p/cm2, equivalent to a fluence of 6*10e14 neq/cm2. The internal gain and the timing resolution were measured as a function of bias voltage at -20C. The timing resolution was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction method for both.
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