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Register a new userInfluence of nanostructuring on silicon vacancy center spins in diamond pillars
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Color centers in diamond micro and nano structures are under investigation for a plethora of applications. However, obtaining high quality color centers in small structures is challenging, and little is known about how properties such as spin population lifetimes change during the transition from bulk to micro and nano structures. In this manuscript, we studied various ways to prepare diamond samples containing silicon vacancy centers and measured how population lifetimes of orbital states change in pillars as we varied their dimensions from approximately 1 $mu$m to 120 nm. We also researched the influence of the properties of the diamond substrate and the implantation and annealing methods on the silicon vacancy inhomogeneous linewidth and orbital lifetime. Our measurements show that nominally identical diamond samples can display significantly distinct inhomogeneous broadening. We observed weak indications that restricted vibrational modes in small structures may extend population lifetimes. However, imperfections in the crystal lattice or surface damage caused by etching reduce population lifetimes, especially in the smallest structures.
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We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multi-qubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing large strain susceptibilities of order 1 PHz/strain for the electronic orbital states. We identify regimes where the spin-orbit interaction results in a large strain suseptibility of order 100 THz/strain for spin transitions, and propose an experiment where the SiV spin is strongly coupled to a nanomechanical resonator.
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The diamond nitrogen-vacancy (NV) center is a leading platform for quantum information science due to its optical addressability and room-temperature spin coherence. However, measurements of the NV centers spin state typically require averaging over many cycles to overcome noise. Here, we review several approaches to improve the readout performance and highlight future avenues of research that could enable single-shot electron-spin readout at room temperature.
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