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Register a new userStrain engineering of the silicon-vacancy center in diamond
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We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multi-qubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing large strain susceptibilities of order 1 PHz/strain for the electronic orbital states. We identify regimes where the spin-orbit interaction results in a large strain suseptibility of order 100 THz/strain for spin transitions, and propose an experiment where the SiV spin is strongly coupled to a nanomechanical resonator.
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We demonstrate optical spin polarization of the neutrally-charged silicon-vacancy defect in diamond ($mathrm{SiV^{0}}$), an $S=1$ defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient under resonant excitation, but non-zero at below-resonant energies. We measure an ensemble spin coherence time $T_2>100~mathrm{mu s}$ at low-temperature, and a spin relaxation limit of $T_1>25~mathrm{s}$. Optical spin state initialization around 946 nm allows independent initialization of $mathrm{SiV^{0}}$ and $mathrm{NV^{-}}$ within the same optically-addressed volume, and $mathrm{SiV^{0}}$ emits within the telecoms downconversion band to 1550 nm: when combined with its high Debye-Waller factor, our initial results suggest that $mathrm{SiV^{0}}$ is a promising candidate for a long-range quantum communication technology.
Color centers in diamond micro and nano structures are under investigation for a plethora of applications. However, obtaining high quality color centers in small structures is challenging, and little is known about how properties such as spin population lifetimes change during the transition from bulk to micro and nano structures. In this manuscript, we studied various ways to prepare diamond samples containing silicon vacancy centers and measured how population lifetimes of orbital states change in pillars as we varied their dimensions from approximately 1 $mu$m to 120 nm. We also researched the influence of the properties of the diamond substrate and the implantation and annealing methods on the silicon vacancy inhomogeneous linewidth and orbital lifetime. Our measurements show that nominally identical diamond samples can display significantly distinct inhomogeneous broadening. We observed weak indications that restricted vibrational modes in small structures may extend population lifetimes. However, imperfections in the crystal lattice or surface damage caused by etching reduce population lifetimes, especially in the smallest structures.
The diamond nitrogen-vacancy (NV) center is a leading platform for quantum information science due to its optical addressability and room-temperature spin coherence. However, measurements of the NV centers spin state typically require averaging over many cycles to overcome noise. Here, we review several approaches to improve the readout performance and highlight future avenues of research that could enable single-shot electron-spin readout at room temperature.
Applications of negatively charged nitrogen-vacancy center in diamond exploit the centers unique optical and spin properties, which at ambient temperature, are predominately governed by electron-phonon interactions. Here, we investigate these interactions at ambient and elevated temperatures by observing the motional narrowing of the centers excited state spin resonances. We determine that the centers Jahn-Teller dynamics are much slower than currently believed and identify the vital role of symmetric phonon modes. Our results have pronounced implications for centers diverse applications (including quantum technology) and for understanding its fundamental properties.
We theoretically propose a method to realize optical nonreciprocity in rotating nano-diamond with a nitrogen-vacancy (NV) center. Because of the relative motion of the NV center with respect to the propagating fields, the frequencies of the fields are shifted due to the Doppler effect. When the control and probe fields are incident to the NV center from the same direction, the two-photon resonance still holds as the Doppler shifts of the two fields are the same. Thus, due to the electromagnetically-induced transparency (EIT), the probe light can pass through the NV center nearly without absorption. However, when the two fields propagate in opposite directions, the probe light can not effectively pass through the NV center as a result of the breakdown of two-photon resonance.
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