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We generalize the notion of dissipationless, topological Hall viscosity tensor to optical phonons in thin film Weyl semimetals. By using the strained Porphyrin thin film Weyl semimetal as a model example, we show how optical phonons can couple to Weyl electrons as chiral pseudo gauge fields. These chiral vector fields lead to a novel dissipationless two-rank viscosity tensor in the effective dynamics of optical phonons whose origin is the chiral anomaly. We also compute the contribution to this two rank Hall viscosity tensor due to the presence of an external magnetic field, whose origin is the conventional Hall response of Weyl electrons. Finally, the phonon dispersion relations of the system at the long-wavelength limit with and without an electromagnetic field are calculated showing a measurable shift in the Raman response of the system. Our results can be investigated by Raman scattering or infrared spectroscopy by attenuated total reflectance experiments.
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While nondissipative hydrodynamics in two-dimensional electron systems has been extensively studied, the role of nondissipative viscosity in three-dimensional transport has remained elusive. In this work, we address this question by studying the nondissipative viscoelastic response of three dimensional crystals. We show that for systems with tetrahedral symmetries, there exist new, intrinsically three-dimensional Hall viscosity coefficients that cannot be obtained via a reduction to a quasi-two-dimensional system. To study these coefficients, we specialize to a theoretically and experimentally motivated tight binding model for a chiral magentic metal in (magnetic) space group [(M)SG] $P2_13$ (No.~198$.$9), a nonpolar group of recent experimental interest which hosts both chiral magnets and topological semimetals. Using the Kubo formula for viscosity, we compute the nondissipative Hall viscosity for the spin-1 fermion in two ways. First we use an electron-phonon coupling ansatz to derive the phonon strain coupling and associated phonon Hall viscosity. Second we use a momentum continuity equation to derive the viscosity corresponding to the conserved momentum density. We conclude by discussing the implication of our results for hydrodynamic transport in three-dimensional magnetic metals, and discuss some candidate materials in which these effects may be observed.
Confined polar optical phonons are studied in a semiconductor double heterostructure (SDH) by means of a generalization of a theory developed some years ago and based on a continuous medium model. The treatment considers the coupling of electro-mechanical oscillations and involves dispersive phonons. This approach has provided results beyond the usually applied dielectric continuum models, where just the electric aspect of the oscillations is analyzed. In the previous works on the subject the theory included phonon dispersion within a quadratic (parabolic) approximation, while presently linear contributions were added by a straightforward extension of the fundamental equations. The generalized version of the mentioned theoretical treatment leads to a description of long wavelength polar optical phonons showing a closer agreement with experimental data and with calculations along atomistic models. This is particularly important for systems where the linear contribution to dispersion becomes predominant. We present a systematic derivation of the underlying equations, their solutions for the bulk and SDH cases, providing us a complete description of the dispersive modes and the associated electron-phonon Hamiltonian. The results obtained are applied to the case of a EuS/PbS/EuS quantum-well.
Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is essential to understand, and eventually control, the cooling dynamics of the photoinduced hot-carrier distribution. There is, however, still an active debate on the different mechanisms that contribute to hot-carrier cooling. In particular, the intrinsic cooling mechanism that ultimately limits the cooling dynamics remains an open question. Here, we address this question by studying two technologically relevant systems, consisting of high-quality graphene with a mobility >10,000 cm$^2$V$^{-1}$s$^{-1}$ and environments that do not efficiently take up electronic heat from graphene: WSe$_2$-encapsulated graphene and suspended graphene. We study the cooling dynamics of these two high-quality graphene systems using ultrafast pump-probe spectroscopy at room temperature. Cooling via disorder-assisted acoustic phonon scattering and out-of-plane heat transfer to the environment is relatively inefficient in these systems, predicting a cooling time of tens of picoseconds. However, we observe much faster cooling, on a timescale of a few picoseconds. We attribute this to an intrinsic cooling mechanism, where carriers in the hot-carrier distribution with enough kinetic energy emit optical phonons. During phonon emission, the electronic system continuously re-thermalizes, re-creating carriers with enough energy to emit optical phonons. We develop an analytical model that explains the observed dynamics, where cooling is eventually limited by optical-to-acoustic phonon coupling. These fundamental insights into the intrinsic cooling mechanism of hot carriers in graphene will play a key role in guiding the development of graphene-based optoelectronic devices.
By means of first-principles calculations and modeling analysis, we have predicted that the traditional 2D-graphene hosts the topological phononic Weyl-like points (PWs) and phononic nodal line (PNL) in its phonon spectrum. The phonon dispersion of graphene hosts three type-I PWs (both PW1 and PW2 at the BZ corners emph{K} and emph{K}, and PW3 locating along the $Gamma$-emph{K} line), one type-II PW4 locating along the $Gamma$-emph{M} line, and one PNL surrounding the centered $Gamma$ point in the $q_{x,y}$ plane. The calculations further reveal that Berry curvatures are vanishingly zero throughout the whole BZ, except for the positions of these four pairs of Weyl-like phonons, at which the non-zero singular Berry curvatures appear with the Berry phase of $pi$ or -$pi$, confirming its topological non-trivial nature. The topologically protected non-trivial phononic edge states have been also evidenced along both the zigzag-edged and armchair-edged boundaries. These results would pave the ways for further studies of topological phononic properties of graphene, such as phononic destructive interference with a suppression of backscattering and intrinsic phononic quantum Hall-like effects.
We theoretically demonstrate that moire phonons at the lowest-energy bands can become chiral. A general symmetry analysis reveals that they originate from stacking configurations leading to an asymmetric interlayer binding energy that breaks the $C_{2z}$ symmetry on the moire length scale. Within elastic theory, we provide a complete classification of van der Waals heterostructures in respect to hosting moire chiral phonons and discuss their emergence in twisted bilayer MoS$_2$ as an example. The formation of the chiral phonons can be qualitatively understood using an effective model, which emphasizes their origin in the energy difference between stacking domains. Since moire chiral phonons are highly tunable, with excitation energies in only a few meV, and moire scale wavelengths, they might find potential applications in phononic twistronic devices.
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