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Register a new userAn integrated nanophotonic quantum register based on silicon-vacancy spins in diamond
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We realize an elementary quantum network node consisting of a silicon-vacancy (SiV) color center inside a diamond nanocavity coupled to a nearby nuclear spin with 100 ms long coherence times. Specifically, we describe experimental techniques and discuss effects of strain, magnetic field, microwave driving, and spin bath on the properties of this 2-qubit register. We then employ these techniques to generate Bell-states between the SiV spin and an incident photon as well as between the SiV spin and a nearby nuclear spin. We also discuss control techniques and parameter regimes for utilizing the SiV-nanocavity system as an integrated quantum network node.
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Color centers in diamond micro and nano structures are under investigation for a plethora of applications. However, obtaining high quality color centers in small structures is challenging, and little is known about how properties such as spin population lifetimes change during the transition from bulk to micro and nano structures. In this manuscript, we studied various ways to prepare diamond samples containing silicon vacancy centers and measured how population lifetimes of orbital states change in pillars as we varied their dimensions from approximately 1 $mu$m to 120 nm. We also researched the influence of the properties of the diamond substrate and the implantation and annealing methods on the silicon vacancy inhomogeneous linewidth and orbital lifetime. Our measurements show that nominally identical diamond samples can display significantly distinct inhomogeneous broadening. We observed weak indications that restricted vibrational modes in small structures may extend population lifetimes. However, imperfections in the crystal lattice or surface damage caused by etching reduce population lifetimes, especially in the smallest structures.
Magnetic field sensors that exploit quantum effects have shown that they can outperform classical sensors in terms of sensitivity enabling a range of novel applications in future, such as a brain machine interface. Negatively charged nitrogen-vacancy (NV) centers in diamond have emerged as a promising high sensitivity platform for measuring magnetic fields at room temperature. Transferring this technology from laboratory setups into products and applications, the total size of the sensor, the overall power consumption, and the costs need to be reduced and optimized. Here, we demonstrate a fiber-based NV magnetometer featuring a complete integration of all functional components without using any bulky laboratory equipment. This integrated prototype allows portable measurement of magnetic fields with a sensitivity of 344 pT/ SqrtHz.
Quantum networks require functional nodes consisting of stationary registers with the capability of high-fidelity quantum processing and storage, which efficiently interface with photons propagating in an optical fiber. We report a significant step towards realization of such nodes using a diamond nanocavity with an embedded silicon-vacancy (SiV) color center and a proximal nuclear spin. Specifically, we show that efficient SiV-cavity coupling (with cooperativity $C >30$) provides a nearly-deterministic interface between photons and the electron spin memory, featuring coherence times exceeding one millisecond. Employing coherent microwave control, we demonstrate heralded single photon storage in the long-lived spin memory as well as a universal control over a cavity-coupled two-qubit register consisting of a SiV and a proximal $^{mathrm{13}}$C nuclear spin with nearly second-long coherence time, laying the groundwork for implementing quantum repeaters.
Integrating atomic quantum memories based on color centers in diamond with on-chip photonic devices would enable entanglement distribution over long distances. However, efforts towards integration have been challenging because color centers can be highly sensitive to their environment, and their properties degrade in nanofabricated structures. Here, we describe a heterogeneously integrated, on-chip, III-V diamond platform designed for neutral silicon vacancy (SiV0) centers in diamond that circumvents the need for etching the diamond substrate. Through evanescent coupling to SiV0 centers near the surface of diamond, the platform will enable Purcell enhancement of SiV0 emission and efficient frequency conversion to the telecommunication C-band. The proposed structures can be realized with readily available fabrication techniques.
Colour centres in diamond have emerged as versatile tools for solid-state quantum technologies ranging from quantum information to metrology, where the nitrogen-vacancy centre is the most studied to-date. Recently, this toolbox has expanded to include different materials for their nanofabrication opportunities, and novel colour centres to realize more efficient spin-photon quantum interfaces. Of these, the silicon-vacancy centre stands out with ultrabright single photon emission predominantly into the desirable zero-phonon line. The challenge for utilizing this centre is to realise the hitherto elusive optical access to its electronic spin. Here, we report spin-tagged resonance fluorescence from the negatively charged silicon-vacancy centre. In low-strain bulk diamond spin-selective excitation under finite magnetic field reveals a spin-state purity approaching unity in the excited state. We also investigate the effect of strain on the centres in nanodiamonds and discuss how spin selectivity in the excited state remains accessible in this regime.
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