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Register a new userCharged domain walls and crystallographic microstructures in hybrid improper ferroelectric Ca$_{3-x}$Sr$_x$Ti$_2$O$_7$
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Added by
Hiroshi Nakajima Dr.
Publication date
2019
fields
Physics
and research's language is
English
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The charged domain walls in ferroelectric materials exhibit intriguing physical properties. We examine herein the charged-domain-wall structures in Ca$_{3-x}$Sr$_x$Ti$_2$O$_7$ using transmission electron microscopy. When viewed along the [001] axis, the wavy charged domain walls are observed over a wide range ($>$5 $mu$m). In contrast, short charged-domain-wall fragments (from 10 to 200 nm long) occur because they are intercepted and truncated by the conventional 180$^{deg}$ domain walls. These results reveal the unusual charged domain structures in Ca$_{3-x}$Sr$_x$Ti$_2$O$_7$ and will be useful for understanding their formation process.
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Ferroic materials are well known to exhibit heterogeneity in the form of domain walls. Understanding the properties of these boundaries is crucial for controlling functionality with external stimuli and for realizing their potential for ultra-low power memory and logic devices as well as novel computing architectures. In this work, we employ synchrotron-based near-field infrared nano-spectroscopy to reveal the vibrational properties of ferroelastic (90$^circ$ ferroelectric) domain walls in the hybrid improper ferroelectric Ca$_3$Ti$_2$O$_7$. By locally mapping the Ti-O stretching and Ti-O-Ti bending modes, we reveal how structural order parameters rotate across a wall. Thus, we link observed near-field amplitude changes to underlying structural modulations and test ferroelectric switching models against real space measurements of local structure. This initiative opens the door to broadband infrared nano-imaging of heterogeneity in ferroics.
Standing on successful first principles predictions for new functional ferroelectric materials, a number of new ferroelectrics have been experimentally discovered. Utilizing trilinear coupling of two types of octahedron rotations, hybrid improper ferroelectricity has been theoretically predicted in ordered perovskites and the Ruddlesden-Popper compounds (Ca$_{3}$Ti$_{2}$O$_{7}$, Ca$_{3}$Mn$_{2}$O$_{7}$, and (Ca/Sr/Ba)$_{3}$(Sn/Zr/Ge)$_{2}$O$_{7}$). However, the ferroelectricity of these compounds has never been experimentally confirmed and even their polar nature has been under debate. Here we provide the first experimental demonstration of room-temperature switchable polarization in the bulk crystals of Ca$_{3}$Ti$_{2}$O$_{7}$ as well as Sr-doped Ca$_{3}$Ti$_{2}$O$_{7}$. In addition, (Ca,Sr)$_{3}$Ti$_{2}$O$_{7}$ is found to exhibit an intriguing ferroelectric domain structure resulting from orthorhombic twins and (switchable) planar polarization. The planar domain structure accompanies abundant charged domain walls with conducting head-to-head and insulating tail-to-tail configurations, which exhibit two-order-of-magnitude conduction difference. These discoveries provide new research opportunities not only on new stable ferroelectrics of Ruddlesden-Popper compounds, but also on meandering conducting domain walls formed by planar polarization.
Ferroelectric domain walls are attracting broad attention as atomic-scale switches, diodes and mobile wires for next-generation nanoelectronics. Charged domain walls in improper ferroelectrics are particularly interesting as they offer multifunctional properties and an inherent stability not found in proper ferroelectrics. Here we study the energetics and structure of charged walls in improper ferroelectric YMnO$_3$, InMnO$_3$ and YGaO$_3$ by first principles calculations and phenomenological modeling. Positively and negatively charged walls are asymmetric in terms of local structure and width, reflecting that polarization is not the driving force for domain formation. The wall width scales with the amplitude of the primary structural order parameter and the coupling strength to the polarization. We introduce general rules for how to engineer $n$- and $p$-type domain wall conductivity based on the domain size, polarization and electronic band gap. This opens the possibility of fine-tuning the local transport properties and design $p$-$n$-junctions for domain wall-based nano-circuitry.
Ca$_3$Ti$_2$O$_7$ is an experimentally confirmed hybrid improper ferroelectric material, in which the electric polarization is induced by a combination of the coherent TiO$_6$ octahedral rotation and tilting. In this work, we investigate the tuning of ferroelectricity of Ca$_3$Ti$_2$O$_7$ using iso-valent substitutions on Ca-sites. Due to the size mismatch, larger/smaller alkaline earths prefer $A$/$A$ sites respectively, allowing the possibility for site-selective substitutions. Without extra carriers, such site-selected iso-valent substitutions can significantly tune the TiO$_6$ octahedral rotation and tilting, and thus change the structure and polarization. Using the first-principles calculations, our study reveals that three substituted cases (Sr, Mg, Sr+Mg) show divergent physical behaviors. In particular, (CaTiO$_3$)$_2$SrO becomes non-polar, which can reasonably explain the suppression of polarization upon Sr substitution observed in experiment. In contrast, the polarization in (MgTiO$_3$)$_2$CaO is almost doubled upon substitutions, while the estimated coercivity for ferroelectric switching does not change. The (MgTiO$_3$)$_2$SrO remains polar but its structural space group changes, with moderate increased polarization and possible different ferroelectric switching paths. Our study reveals the subtle ferroelectricity in the $A_3$Ti$_2$O$_7$ family and suggests one more practical route to tune hybrid improper ferroelectricity, in addition to the strain effect.
We report on a thermal-expansion study of the ferroelectric phase transition in insulating Sr$_{1-x}$Ca$_x$TiO$_3$ ($x=0.009$) and its evolution upon increasing charge-carrier concentration up to $nsimeq 60 times 10^{19}$cm$^{-3}$. Although electric polarization is screened by mobile charge carriers, we find clear signatures of the ferroelectric phase transition in the thermal-expansion coefficient $alpha$ of the weakly doped metallic samples. Upon increasing $n$, the transition temperature $T_mathrm{C}(n)$ and the magnitude of the anomalies in $alpha$ rapidly decrease up to a threshold carrier density $n^star$ above which broadened anomalies remain present. There is no indication for a sign change of $alpha$ as is expected for a pressure-dependent quantum phase transition with $n$ as the control parameter. Thus, the ferroelectriclike transition is either continuously fading away or it transforms to another low-temperature phase above $n^star$, but this change hardly affects the temperature-dependent $alpha(T)$ data.
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