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Register a new userIn Praise and in Search of Highly-Polarizable Semiconductors
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The dielectric response of materials underpins electronics and photonics. Established semiconductor materials have a narrow range of dielectric susceptibility, with low-frequency values on the order of 10. Strong and variable dielectric response in wide-band gap materials is associated with complex crystal structures and heavier elements. Based on underlying chemical trends, we hypothesize that chalcogenides in crystal structures common to complex oxides may feature many highly-polarizable semiconductors. Research on these materials is motivated by fundamental inquiry into electrons and phonons in solids, and by potential applications in photonics, high-frequency communications, and photovoltaics.
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There are few known semiconductors exhibiting both strong optical response and large dielectric polarizability. Inorganic materials with large dielectric polarizability tend to be wide-band gap complex oxides. Semiconductors with strong photoresponse to visible and infrared light tend to be weakly polarizable. Interesting exceptions to these trends are halide perovskites and phase-change chalcogenides. Here we introduce complex chalcogenides in the Ba-Zr-S system in perovskite and Ruddlesden-Popper structures as a new family of highly polarizable semiconductors. We report the results of impedance spectroscopy on single crystals that establish BaZrS3 and Ba3Zr2S7 as semiconductors with low-frequency relative dielectric constant (${epsilon}_0$) in the range 50 - 100, and band gap in the range 1.3 - 1.8 eV. Our electronic structure calculations indicate the enhanced dielectric response in perovskite BaZrS3 versus Ruddlesden-Popper Ba3Zr2S7 is primarily due to enhanced IR mode-effective charges, and variations in phonon frequencies along $langle 001 rangle$; differences in the Born effective charges and the lattice stiffness are of secondary importance. This combination of covalent bonding in crystal structures more common to complex oxides results in a sizable Frohlich coupling constant, which suggests that charge carriers are large polarons.
In this paper, we present a collection of results focussing on the transport properties of doped direct-gap inverted-band highly polar III-nitride semiconductors (GaN, AlN, InN) and GaAs in the transient and steady state, calculated by using nonlinear quantum kinetic theory based on a non-equilibrium statistical ensemble formalism (NESEF). In the present paper, these results are compared with calculations usingMonteCarlo modelling simulations and experimental measurements. Both n-type and p-type materials, in the presence of intermediate to high electric fields, are considered for several temperatures and carrier concentrations.The agreement between the results obtained using nonlinear quantum kinetic theory, with those ofMonte Carlo calculations and experimental data is remarkably good, thus satisfactorily validating the NESEF.
This article reviews the current status of spin dynamics in semiconductors which has achieved a lot of progress in the past years due to the fast growing field of semiconductor spintronics. The primary focus is the theoretical and experimental developments of spin relaxation and dephasing in both spin precession in time domain and spin diffusion and transport in spacial domain. A fully microscopic many-body investigation on spin dynamics based on the kinetic spin Bloch equation approach is reviewed comprehensively.
We studied angle-dependent reflectivity spectra of opal photonic crystals infiltrated with cyanine dyes, which are highly polarizable media with very large Rabi frequency. We show that when resonance conditions between the exciton-polariton of the infiltrated dye and Bragg frequencies exist, then the Bragg stop band decomposes into two reflectivity bands with a semi-transparent spectral range in between that is due to light propagation inside the gap caused by the existence of braggoriton excitations. These novel excitations result from the interplay interaction between the Bragg gap with spatial modulation origin and the polariton gap due to the excitons, and may lead to optical communication traffic inside the gap of photonic crystals via channel waveguiding.
Usually microscopic electrostatic field around charged impurity ions is neglected when the ionization energy is concerned. The ionization energy is considered to be equal to that of a lonely impurity atom. Here the energy of the electrostatic field around charged impurity ions in semiconductor is taken into account. It is shown that the energy of this field contributes to decrease in the effective ionization energy. At high enough current carriers concentration the effective ionization energy becomes zero.
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