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Register a new userPrediction of topological Hall effect in a driven magnetic domain wall
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We investigate the possible emergence of topological Hall effect (THE) in a driven magnetic DW. Numerical simulation based on the Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation shows that the emergent magnetic flux appears when the DW is in a non-equilibrium state. The magnitude of magnetic flux is modulated by Dzyaloshinskii-Moriya interaction (DMI) or in-plane longitudinal magnetic field, providing an experimental test of the predicted THE. These results indicate that the THE can be observed even in a topologically trivial magnetic DW, and therefore open up new possibility to electrically detect the dynamical spin structure.
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Geometric Berry phase can be induced either by spin-orbit coupling, giving rise to the anomalous Hall effect in ferromagnetic materials, or by chiral spin texture, such as skyrmions, leading to the topological Hall effect. Recent experiments have revealed that both phenomena can occur in topological insulator films with magnetic doping, thus providing us with an intriguing platform to study the interplay between these two phenomena. In this work, we numerically study the anomalous Hall and topological Hall effects in a four-band model that can properly describe the quantum well states in the magnetic topological insulator films by combining Landauer-Buttiker formula and the iterative Greens function method. Our numerical results suggest that spin-orbit coupling in this model plays a different role in the quantum transport in the clean and disordered limits. In the clean limit, spin-orbit coupling mainly influences the longitudinal transport but does not have much effect on topological Hall conductance. Such behavior is further studied through the analytical calculation of scattering cross-section due to skyrmion within the four-band model. In the disordered limit, the longitudinal transport is determined by disorder scattering and spin-orbit coupling is found to affect strongly the topological Hall conductance. This sharp contrast unveils a dramatic interplay between spin-orbit coupling and disorder effect in topological Hall effect in magnetic topological insulator systems.
In this article we consider the chiral Hall effect due to topologically protected kink states formed in topological insulators at boundaries between domains with differing topological invariants. Such systems include the surfaces of three dimensional topological insulators magnetically doped or in proximity with ferromagnets, as well as certain two dimensional topological insulators. We analyze the equilibrium charge current along the domain wall and show that it is equal to the sum of counter-propagating equilibrium currents flowing along external boundaries of the domains. In addition, we also calculate a dissipative current along the domain wall when an external voltage is applied perpendicularly to the wall.
The Hall effect, the anomalous Hall effect and the spin Hall effect are fundamental transport processes in solids arising from the Lorentz force and the spin-orbit coupling respectively. The quant
The ordinary Hall effect is driven by the Lorentz force, while its anomalous counterpart occurs in ferromagnets. Here we show that the Berry curvature monopole of non-magnetic 2D spin-3/2 holes leads to a novel Hall effect linear in an applied in-plane magnetic field B_x. There is no Lorentz force hence no ordinary Hall effect, while all disorder contributions vanish to leading order in B_x. This intrinsic phenomenon, which we term the anomalous planar Hall effect (APHE), provides a non-quantized footprint of topological transport directly accessible in p-type semiconductors.
We present a theory of the current-voltage characteristics of a magnetic domain wall between two highly spin-polarized materials, which takes into account the effect of the electrical bias on the spin-flip probability of an electron crossing the wall. We show that increasing the voltage reduces the spin-flip rate, and is therefore equivalent to reducing the width of the domain wall. As an application, we show that this effect widens the temperature window in which the operation of a unipolar spin diode is nearly ideal.
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