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Register a new userChipscale plasmonic modulators and switches based on metal-insulator-metal waveguides with Ge2Sb2Te5
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We introduce phase-change material Ge2Sb2Te5 (GST) into metal-insulator-metal (MIM) waveguide systems to realize chipscale plasmonic modulators and switches in the telecommunication band. Benefitting from the high contrast of optical properties between amorphous and crystalline GST, the three proposed structures can act as reconfigurable and non-volatile modulators and switches with excellent modulation depth 14 dB and fast response time in nanosecond, meanwhile possessing small footprints, simple frameworks and easy fabrication. This work provides new solutions to design active devices in MIM waveguide systems, and can find potential applications in more compact all-optical circuits for information processing and storage.
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As an analogue of electromagnetically induced transparency (EIT), plasmon-induced transparency (PIT) has been realized both in plasmonic metamaterial and waveguide structures. Via near-field coupling within unit cells, PIT with broadband could be produced by plasmonic metamaterials, which, however, has not been realized in on-chip plasmonic waveguide structures. Here, we introduce broadband PIT based on a plasmonic metal-insulator-metal (MIM) waveguide system. Utilizing the direct coupling structure, PIT emerges based on an easy-fabricated structure without gap. By tuning coupling distance, the transparent window can be continuously tuned from narrow- to broadband. Such device is promising for on-chip applications on sensing, filtering and slow light over a broad frequency range.
By combining analytical and numerical approaches, we theoretically investigate the effect of fabrication imperfections, e.g. roughness at metal interfaces, on nanometer metal-insulator-metal waveguides supporting slow gap-plasmon modes. Realistic devices with vapor deposition- and chemically-grown metal films are considered. We obtain quantitative predictions for the attenuations induced by absorption and by backscattering, and analytically derive how both attenuations scale with respect to the group velocity. Depending on the material parameters and fabrication quality, roughness-induced backscattering is find to be a significant additional source of attenuation for small group velocities, which is often neglected in the literature.
Graphene has extraordinary electro-optic properties and is therefore a promising candidate for monolithic photonic devices such as photodetectors. However, the integration of this atom-thin layer material with bulky photonic components usually results in a weak light-graphene interaction leading to large device lengths limiting electro-optic performance. In contrast, here we demonstrate a plasmonic slot graphene photodetector on silicon-on-insulator platform with high-responsivity given the 5 um-short device length. We observe that the maximum photocurrent, and hence the highest responsivity, scales inversely with the slot gap width. Using a dual-lithography step, we realize 15 nm narrow slots that show a 15-times higher responsivity per unit device-length compared to photonic graphene photodetectors. Furthermore, we reveal that the back-gated electrostatics is overshadowed by channel-doping contributions induced by the contacts of this ultra-short channel graphene photodetector. This leads to quasi charge neutrality, which explains both the previously-unseen offset between the maximum photovoltaic-based photocurrent relative to graphenes Dirac point and the observed non-ambipolar transport. Such micrometer compact and absorption-efficient photodetectors allow for short-carrier pathways in next-generation photonic components, while being an ideal testbed to study short-channel carrier physics in graphene optoelectronics.
A plasmonic modulator is a device that controls the amplitude or phase of propagating plasmons. In a pure plasmonic modulator, the presence or absence of a pump plasmonic wave controls the amplitude of a probe plasmonic wave through a channel. This control has to be mediated by an interaction between disparate plasmonic waves, typically requiring the integration of a nonlinear material. In this work, we demonstrate the first 2D semiconductor nonlinear plasmonic modulator based on a WSe2 monolayer integrated on top of a lithographically defined metallic waveguide. We utilize the strong coupling between the surface plasmon polaritons, SPPs, and excitons in the WSe2 to give a 73 percent change in transmission through the device. We demonstrate control of the propagating SPPs using both optical and SPP pumps, realizing the first demonstration of a 2D semiconductor nonlinear plasmonic modulator, with a modulation depth of 4.1 percent, and an ultralow switching energy estimated to be 40 aJ.
Graphene is a 2D material with appealing electronic and optoelectronic properties. It is a zero-bandgap material with valence and conduction bands meeting in a single point (Dirac point) in the momentum space. Its conductivity can be changed by shifting the Fermi level energy via an external electric field. This important property determines broadband and tunable absorption at optical frequencies. Moreover, its conductivity is a complex quantity, i.e. Graphene exhibits both electro-absorption and electro-refraction tunability, and this is an intriguing property for photonic applications. For example, it can be combined as an active material for silicon waveguides to realize efficient detectors, switches and modulators. In this paper, we review our results in the field, focusing on graphene-based optical modulators integrated on Silicon photonic platforms. Results obtained in the fabrication of single- and double-layer capacitive modulators are reported showing intensity and phase modulation, resilience of the generated signals to chromatic dispersion because of proper signal chirp and operation up to 50 Gb/s.
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