No Arabic abstract
The density functional theory with generalized gradient approximation has been used to investigate the electronic structure of gadolinium pyrochlore A2Zr2O7 (A=Gd, Nd) ceramic synthesized in polycrystalline form by solid state reaction. Structural characterization of the compound was done through X-ray diffraction (XRD) followed by Rietveld analysis of the XRD pattern. The Zr-K edge X-ray absorption (XAFS) spectra of A2Zr2O7 (A=Gd, Nd) were analysed together with those Zr-foil, which was used as reference compounds. X-ray photoemission spectroscopy (XPS), X-ray absorption near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) for A2Zr2O7 (A=Gd, Nd) has been employed to obtain quantitative structural information on the Zr-local environment. The band gap is estimated using UV-Vis spectroscopy. The crystal structure is face centered cubic, space group being Fd-3m (No. 227). The total energies in this work were calculated using the generalized gradient approximation to DFT plus on-site repulsion (U) method.
The layered perovskite compounds are interesting due to their intriguing physical properties. In this article we report the structural, magnetic and dielectric properties of LnBaCuFeO5 (Ln=Nd, Eu, Gd, Ho and Yb). The structural parameters decrease from Nd to Yb due to the decrease in the ionic radii of the rare earth ions. An antiferromagnetic transition is observed for EuBaCuFeO5 near 120 K along with the glassy dynamics of the electric dipoles below 100 K. The magnetic transition is absent in other compounds, which may be due to the dominance of the magnetic moment of the rare earth ions. The dielectric constant does not show any anomaly, except in the case of HoBaCuFeO5 where it shows a weak frequency dependence around 54 K. These compounds show a significant enhancement of dielectric constant at high temperatures which have been attributed to Maxwell-Wagner effect. However, no significant magneto-dielectric coupling has been observed in these layered perovskites.
The bulk magnetic properties of the lanthanide metaborates, $Ln$(BO$_2$)$_3$, $Ln$ = Pr, Nd, Gd, Tb are studied using magnetic susceptibility, heat capacity and isothermal magnetisation measurements. They crystallise in a monoclinic structure containing chains of magnetic $Ln^{3+}$ and could therefore exhibit features of low-dimensional magnetism and frustration. Pr(BO$_2$)$_3$ is found to have a non-magnetic singlet ground state. No magnetic ordering is observed down to 0.4 K for Nd(BO$_2$)$_3$. Gd(BO$_2$)$_3$ exhibits a sharp magnetic transition at 1.1 K, corresponding to three-dimensional magnetic ordering. Tb(BO$_2$)$_3$ shows two magnetic ordering features at 1.05 K and 1.95 K. A magnetisation plateau at a third of the saturation magnetisation is seen at 2 K for both Nd(BO$_2$)$_3$ and Tb(BO$_2$)$_3$ which persists in an applied field of 14 T. This is proposed to be a signature of quasi one-dimensional behaviour in Nd(BO$_2$)$_3$ and Tb(BO$_2$)$_3$.
New emerging disciplines such as Nanoionics and Iontronics are dealing with the exploitation of mesoscopic size effects in materials, which become visible (if not predominant) when downsizing the system to the nanoscale. Driven by the worldwide standardisation of thin film deposition techniques, the access to radically different properties than those found in the bulk macroscopic systems can be accomplished. This opens up promising approaches for the development of advanced microdevices, by taking advantage of the nanostructural deviations found in nanometre sized, interface dominated materials compared to the ideal relaxed structure of the bulk. A completely new set of functionalities can be explored, with implications in many different fields such as energy conversion and storage, or information technologies. This manuscript reviews the strategies, employed and foreseen, for engineering mass transport properties in thin film ceramics, with the focus in oxide ionic and mixed ionic electronic conductors and their application in micro power sources.
Rare-earth (RE) based frustrated magnets as typical systems of combining strong spin-orbit coupling, geometric frustration and anisotropic exchange interactions, can give rise to diverse exotic magnetic ground states such as quantum spin liquid (QSL). The discovery of new RE-based frustrated materials is crucial for exploring the exotic magnetic phases. Herein, we report the synthesis, structure and magnetic properties of a family of melilite-type RE2Be2GeO7 (RE = Pr, Nd, Gd-Yb) compounds crystallized in a tetragonal structure, where magnetic RE3+ ions lay out on Shastry-Sutherland lattice (SSL) within ab-plane and are well separated by nonmagnetic GeBe2O7 polyhedrons along c-axis. Temperature-dependent susceptibilities and isothermal magnetization M(H) measurements reveal that most RE2Be2GeO7 compounds except RE=Tb show no magnetic ordering down to 2 K despite the dominant antiferromagnetic (AFM) interactions, where Tb2Be2GeO7 undergoes AFM transition with Neel temperature TN~ 2.5 K and field-induced spin flop behaviors (T< TN). In addition, the calculated magnetic entropy change from the isothermal M(H) curves reveal a viable magnetocaloric effect (MCE) for RE2Be2GeO7 (RE =Gd, Dy) in liquid helium temperature regimes, Gd2Be2GeO7 shows maximum Sm up to 54.8 J K-1 Kg-1 at H= 7 T and Dy2Be2GeO7 has largest value Sm=16.1 J K-1 kg-1 at H= 2 T in this family. More excitingly, rich diversity of RE ions in this family enables an archetype for exploring exotic quantum magnetic phenomena with large variability of spin located on SSL lattice.
We present a detailed study of the magnetic-field and temperature-dependent polarization of the near-band-gap photoluminescence in Gd-doped GaN layers. Our study reveals an extraordinarily strong influence of Gd doping on the electronic states in the GaN matrix. We observe that the spin splitting of the valence band reverses its sign for Gd concentrations as low as 1.6 x 10^{16} cm^{-3}. This remarkable result can be understood only in terms of a long range induction of magnetic moments in the surrounding GaN matrix by the Gd ions.