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Register a new userUp to 70 THz bandwidth from implanted Ge photoconductive antenna excited by a fibre laser
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Phase-stable electromagnetic pulses in the THz frequency range offer several unique capabilities in time-resolved spectroscopy. However, the diversity of their application is limited by the covered spectral bandwidth. In particular, the upper frequency limit of photoconductive emitters - the most widespread technique in THz spectroscopy - reaches only up to 7 THz in regular transmission mode due to the absorption by infrared-active optical phonons. Here, we present ultra-broadband (extending up to 70 THz) THz emission from Au implanted Ge emitter which is compatible with a fibre laser operating at 1.1 and 1.55 {mu}m wavelengths at a repetition rates of 10 and 20 MHz, respectively. This opens a perspective for the development of compact THz photonic devices operating up to multi-THz frequencies and compatible with Si CMOS technology.
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We present a MF{terahertz} quantum cascade laser operating on a thermoelectric cooler up to a record-high temperature of 210.5 K. The active region design is based on only two quantum wells and achieves high temperature operation thanks to a systematic optimization by means of a nonequilibrium Greens function model. Laser spectra were measured with a room temperature detector, making the whole setup cryogenic free. At low temperatures ($sim 40 K), a maximum output power of 200 mW was measured.
We developed THz-resonant scanning probe tips, yielding strongly enhanced and nanoscale confined THz near fields at their tip apex. The tips with length in the order of the THz wavelength ({lambda} = 96.5 {mu}m) were fabricated by focused ion beam (FIB) machining and attached to standard atomic force microscopy (AFM) cantilevers. Measurements of the near-field intensity at the very tip apex (25 nm radius) as a function of tip length, via graphene-based (thermoelectric) near-field detection, indicate their first and second order geometrical antenna resonances for tip length of 33 and 78 {mu}m, respectively. On resonance, we find that the near-field intensity is enhanced by one order of magnitude compared to tips of 17 {mu}m length (standard AFM tip length), which is corroborated by numerical simulations that further predict remarkable intensity enhancements of about 107 relative to the incident field. Because of the strong field enhancement and standard AFM operation of our tips, we envision manifold and straightforward future application in scattering-type THz near-field nanoscopy and THz photocurrent nanoimaging, nanoscale nonlinear THz imaging, or nanoscale control and manipulation of matter employing ultrastrong and ultrashort THz pulses.
In this work, we demonstrate BNAs high potential for efficient generation of high power THz using ytterbium laser wavelengths. We study the generation theoretically and experimentally using laser wavelength of 960-1150 nm. Broadband pulses of 0-7 THz and high efficiency of 0.6% are demonstrated.
Full control of the ellipticity of broadband pulses of THz radiation, from linear to left- or right-handed circular polarization, was demonstrated via a 4-pixel photoconductive emitter with an integrated achromatic waveplate. Excellent polarization purity and accuracy was achieved, with Stokes parameters exceeding 97% for linear and circular polarization, via a robust scheme that corrected electrically for polarization changes caused by imperfect optical elements. Further, to assess the speed and precision of measurements of the THz polarization we introduced a new figure of merit, the standard error after one second of measurement, found to be 0.047$^{circ}$ for the polarization angle.
We report electroluminescence originating from L-valley transitions in n-type Ge/Si$_{0.15}$Ge$_{0.85}$ quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of $Delta f/f approx 0.2$. Three strain-compensated heterostructures, grown on a Si substrate by ultrahigh vacuum chemical vapor deposition, have been investigated. The design is based on a single quantum well active region employing a vertical optical transition and the observed spectral features are well described by non-equilibrium Greens function calculations. The presence of two peaks highlights a suboptimal injection in the upper state of the radiative transition. Comparison of the electroluminescence spectra with similar GaAs/AlGaAs structure yields one order of magnitude lower emission efficiency.
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