No Arabic abstract
Two-dimensional atomic crystals (2DACs) can be mechanically assembled with precision for the fabrication of heterostructures, allowing for the combination of material building blocks with great flexibility. In addition, while conventional nanolithography can be detrimental to most of the 2DACs which are not sufficiently inert, mechanical assembly potentially minimizes the nanofabrication processing and preserves the intrinsic physical properties of the 2DACs. In this work we study the interfacial charge transport between various 2DACs and electrical contacts, by fabricating and characterizing 2DAC-superconductor junctions through mechanical transfer. Compared to devices fabricated with conventional nanolithography, mechanically assembled devices show comparable or better interface transparency. Surface roughness at the electrical contacts is identified to be a major limitation to the interface quality.
We report a systematic study of the contact resistance present at the interface between a metal (Ti) and graphene layers of different, known thickness. By comparing devices fabricated on 11 graphene flakes we demonstrate that the contact resistance is quantitatively the same for single-, bi-, and tri-layer graphene ($sim800 pm 200 Omega mu m$), and is in all cases independent of gate voltage and temperature. We argue that the observed behavior is due to charge transfer from the metal, causing the Fermi level in the graphene region under the contacts to shift far away from the charge neutrality point.
Thin nanomaterials are key constituents of modern quantum technologies and materials research. Identifying specimens of these materials with properties required for the development of state of the art quantum devices is usually a complex and lengthy human task. In this work we provide a neural-network driven solution that allows for accurate and efficient scanning, data-processing and sample identification of experimentally relevant two-dimensional materials. We show how to approach classification of imperfect imbalanced data sets using an iterative application of multiple noisy neural networks. We embed the trained classifier into a comprehensive solution for end-to-end automatized data processing and sample identification.
The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limitation to graphene based transistor performance is not related to the material quality, but to extrinsic factors that affect the electronic transport properties. One of the most important parasitic element is the contact resistance appearing between graphene and the metal electrodes functioning as the source and the drain. Ohmic contacts to graphene, with low contact resistances, are necessary for injection and extraction of majority charge carriers to prevent transistor parameter fluctuations caused by variations of the contact resistance. The International Technology Roadmap for Semiconductors, toward integration and down-scaling of graphene electronic devices, identifies as a challenge the development of a CMOS compatible process that enables reproducible formation of low contact resistance. However, the contact resistance is still not well understood despite it is a crucial barrier towards further improvements. In this paper, we review the experimental and theoretical activity that in the last decade has been focusing on the reduction of the contact resistance in graphene transistors. We will summarize the specific properties of graphene-metal contacts with particular attention to the nature of metals, impact of fabrication process, Fermi level pinning, interface modifications induced through surface processes, charge transport mechanism, and edge contact formation.
Large assemblies of self-organized aluminum nanoclusters embedded in an oxide layer are formed on graphene templates and used to build tunnel-junction devices. Unexpectedly, single-electron-transport behavior with well-defined Coulomb oscillations is observed for a record junction area containing millions of metal islands. Such hybrid materials offer new prospects for single-electron electronics.
We present a theoretical study of the optical response of a nonlinear oscillator formed by coupling a metal nanoparticle local surface plasmon resonance to excitonic degrees of freedom in a monolayer transition-metal dichalcogenide. We show that the combined system should exhibit strong anharmonicity in its low-lying states, predicting for example a seven order-of-magnitude increase in nonlinearity relative to a silicon photonic crystal cavity. Then, we demonstrate that such system exhibits strong quantum features such as antibunching and non-Gaussianity. Arrays of such nanoscale nonlinear oscillators could be used to realize novel optical metamaterials; alternatively, an individual nanoparticle-monolayer construct could be coupled to an optical resonator to mediate efficient input-output coupling to propagating fields.