No Arabic abstract
The in-depth understanding of hydrogen permeation through plutonium-oxide overlayers is the prerequisite to evaluate the complex hydriding induction period of Pu. In this work, the incorporation, diffusion and dissolution of hydrogen in $alpha$-Pu$_{2}$O$_{3}$ are investigated by the first-principles calculations and $textit{ab initio}$ thermodynamic method based on DFT+U and DFT-D3 schemes. Our study reveals that the hydrogen incorporation is endothermic and the separated H atoms prefer to recombine as H$_{2}$ molecules rather than reacting with $alpha$-Pu$_{2}$O$_{3}$. The H and H$_{2}$ diffusion are both feasible, generally, H will recombine first as H$_{2}$ and then migrate. Both pressure P$_{H2}$ and temperature can promote the hydrogen dissolution in $alpha$-Pu$_{2}$O$_{3}$. The single H$_{2}$ molecule incorporation and (H+H$_{2}$) mixed dissolution will successively appear when increasing P$_{H2}$. Compared to PuO$_{2}$, this work indicates that Pu sesquioxide is hardly reduced by hydrogen, but the porous $alpha$-Pu$_{2}$O$_{3}$ facilitates hydrogen transport in Pu oxide layers. We presents the microscopic picture of hydrogen behaviors in the defect-free $alpha$-Pu$_{2}$O$_{3}$, which could shed some light on the study of the hydriding induction period of Pu.
The band structure, optical and defects properties of Ba_{2}TeO are systematically investigated using density functional theory with a view to understanding its potential as an optoelectronic or trans- parent conducting material. Ba_{2}TeO crystallizes with tetragonal structure (space group P4/nmm) and with a 2.93 eV optical band gap 1 . We find relatively modest band masses for both electrons and holes suggesting applications. Optical properties show a infrared-red absorption when doped. This could potentially be useful for combining wavelength filtering and transparent conducting functions. Furthermore, our defect calculations show that Ba_{2}TeO is intrinsically p-type conducting under Ba-poor condition. However, the spontaneous formation of the donor defects may constrain the p-type transport properties and would need to be addressed to enable applications.
We present a first-principles study of the electronic, magnetic, and transport properties of the topological insulator Bi$_{2}$Te$_{3}$ doped with Mn atoms in substitutional (Mn$_{rm Bi}$) and interstitial van der Waals gap positions (Mn$_{rm i}$), which act as acceptors and donors, respectively. The effect of native Bi$_{rm Te}$- and Te$_{rm Bi}$-antisite defects and their influence on calculated electronic transport properties is also investigated. We have studied four models representing typical cases, namely (i) Bi$_{2}$Te$_{3}$ with and without native defects, (ii) Mn$_{rm Bi}$ defects with and without native defects, (iii) the same but for Mn$_{rm i}$ defects, and (iv) the combined presence of Mn$_{rm Bi}$ and Mn$_{rm i}$. It was found that lattice relaxations around Mn$_{rm Bi}$ defects play an important role for both magnetic and transport properties. The resistivity is strongly influenced by the amount of carriers, their type, and by the relative positions of the Mn-impurity energy levels and the Fermi energy. Our results indicate strategies to tune bulk resistivities, and also help to uncover the location of Mn atoms in measured samples. Calculations indicate that at least two of the considered defects have to be present simultaneously in order to explain the experimental observations, and the role of interstitials may be more important than expected.
The connection between noncentrosymmetric materials structure, electronic structure, and bulk photovoltaic performance remains not well understood. In particular, it is still unclear which photovoltaic (PV) mechanism(s) are relevant for the recently demonstrated visible-light ferroelectric photovoltaic (K,Ba)(Ni,Nb)O$_{3-delta}$. In this paper, we study the bulk photovoltaic effect (BPVE) of (K,Ba)(Ni,Nb)O$_{3-delta}$ and KNbO$_{3}$ by calculating the shift current from first principles. The effects of structural phase, lattice distortion, oxygen vacancies, cation arrangement, composition, and strain on BPVE are systematically studied. We find that (K,Ba)(Ni,Nb)O$_{3-delta}$ has a comparable BPVE with that of the broadly explored BiFeO$_{3}$, but for a much lower photon energy. In particular, the Glass coefficient of (K,Ba)(Ni,Nb)O$_{5}$ in a simply layered structure can be as large as 12 times that of BiFeO$_{3}$. Furthermore, the nature of the wavefunctions dictates the eventual shift current yield, which can be significantly affected and engineered by changing the O vacancy location, cation arrangement, and strain. This is not only helpful for understanding other PV mechanisms that relate to the motion of the photocurrent carriers, but also provides guidelines for the design and optimization of PV converters.
Alloying elements play an important role in the design of plasma facing materials with good comprehensive properties. Based on first-principles calculations, the stability of alloying element W and its interaction with vacancy defects in Ta-W alloys are studied. The results show that W tends to distribute dispersedly in Ta lattice, and is not likely to form precipitation even with the coexistence of vacancy. The aggregation behaviors of W and vacancy can be affected by their concentration competition. The increase of W atoms has a negative effect on the vacancy clustering, as well as delays the vacancy nucleation process, which is favorable to the recovery of point defects. Our results are in consistent with the defect evolution observed in irradiation experiments in Ta-W alloys. Our calculations suggest that Ta is a potential repairing element that can be doped into Ta-based materials to improve their radiation resistance.
We use first-principles density functional theory (DFT) calculations to investigate the ground state structures of both BaCeO_{3} (BC) and Pd-doped BC (BCP). The relaxed structures match closely with recent experimental scattering studies, and also provide a local picture of how the BC perovskite lattice accommodates Pd. Both stoichiometric and oxygen-deficient materials are considered, and structures with an O vacancy adjacent to each Pd are predicted to be favored. The oxidation state of Pd in each doped structure is investigated through a structural analysis, the results of which are supported by an orbital-resolved projected density of states. The vacancy stabilization by Pd in BCP is explained through redox chemistry and lattice strain relief.