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Register a new userAnisotropic two-dimensional screening at the surface of black phosphorus
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Added by
Alexander Khajetoorians
Publication date
2019
fields
Physics
and research's language is
English
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Screening in reduced dimensions has strong consequences on the electronic properties in van der Waals semiconductors, impacting the quasiparticle band gap and exciton binding energy. Screening in these materials is typically treated isotropically, yet black phosphorus exhibits in-plane electronic anisotropy seen in its effective mass, carrier mobility, excitonic wavefunctions, and plasmonic dispersion. Here, we use the adsorption of individual potassium atoms on the surface of black phosphorus to vary the near-surface doping over a wide range, while simultaneously probing the dielectric screening via the ordering of the adsorbed atoms. Using scanning tunneling microscopy, we visualize the role of strongly anisotropic screening which leads to the formation of potassium chains with a well-defined orientation and spacing. We quantify the mean interaction potential utilizing statistical methods and find that the dimensionality and anisotropy of the screening is consistent with the presence of a band-bending induced confinement potential near the surface. We corroborate the observed behavior with coverage-dependent studies of the electronic structure with angle-resolved photoemission.
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Black phosphorus (BP), a layered van der Waals material, reportedly has a band gap sensitive to external perturbations and manifests a Dirac-semimetal phase when its band gap is closed. Previous studies were focused on effects of each perturbation, lacking a unified picture for the band-gap closing and the Dirac-semimetal phase. Here, using pseudospins from the glide-reflection symmetry, we study the electronic structures of mono- and bilayer BP and construct the phase diagram of the Dirac-semimetal phase in the parameter space related to pressure, strain, and electric field. We find that the Dirac-semimetal phase in BP layers is singly connected in the phase diagram, indicating the phase is topologically identical regardless of the gap-closing mechanism. Our findings can be generalized to the Dirac semimetal phase in anisotropic layered materials and can play a guiding role in search for a new class of topological materials and devices.
Weak localization was observed and determined in a black phosphorus (bP) field-effect transistor 65 nm thick. The weak localization behaviour was found to be in excellent agreement with the Hikami-Larkin-Nagaoka model for fields up to 1~T, from which characteristic scattering lengths could be inferred. The dephasing length $L_phi$ was found to increase linearly with increasing hole density attaining a maximum value of 55 nm at a hole density of approximately $10^{13} cm^{-2}$ inferred from the Hall effect. The temperature dependence of $L_phi$ was also investigated and above 1~K, it was found to decrease weaker than the $L_phi propto T^{-frac{1}{2}}$ dependence characteristic of electron-electron scattering in the presence of elastic scattering in two dimensions. Rather, the observed power law was found to be close to that observed previously in other quasi-one-dimensional systems such as metallic nanowires and carbon nanotubes. We attribute our result to the crystal structure of bP which host a `puckered honeycomb lattice forming a strongly anisotropic medium
Recently, it was demonstrated that a graphene/dielectric/metal configuration can support acoustic plasmons, which exhibit extreme plasmon confinement an order of magnitude higher than that of conventional graphene plasmons. Here, we investigate acoustic plasmons supported in a monolayer and multilayers of black phosphorus (BP) placed just a few nanometers above a conducting plate. In the presence of a conducting plate, the acoustic plasmon dispersion for the armchair direction is found to exhibit the characteristic linear scaling in the mid- and far-infrared regime while it largely deviates from that in the long wavelength limit and near-infrared regime. For the zigzag direction, such scaling behavior is not evident due to relatively tighter plasmon confinement. Further, we demonstrate a new design for an acoustic plasmon resonator that exhibits higher plasmon confinement and resonance efficiency than BP ribbon resonators in the mid-infrared and longer wavelength regime. Theoretical framework and new resonator design studied here provide a practical route toward the experimental verification of the acoustic plasmons in BP and open up the possibility to develop novel plasmonic and optoelectronic devices that can leverage its strong in-plane anisotropy and thickness-dependent band gap.
We report about the energy and momentum resolved optical response of black phosphorus (BP) in its bulk form. Along the armchair direction of the puckered layers we find a highly dispersive mode that is trongly suppressed in the perpendicular (zig-zag) direction. This mode emerges out of the single-particle continuum for finite values of momentum and is therefore interpreted as an exciton. We argue that this exciton, which has already been predicted theoretically for phosphorene -- the monolayer form of BP -- can be detected by conventional optical spectroscopy in the two-dimensional case and might pave the way for optoelectronic applications of this emerging material.
Black phosphorus (bP) is the second known elemental allotrope with a layered crystal structure that can be mechanically exfoliated down to atomic layer thickness. We have fabricated bP naked quantum wells in a back-gated field effect transistor geometry with bP thicknesses ranging from $6pm1$ nm to $47pm1$ nm. Using an encapsulating polymer superstrate, we have suppressed bP oxidation and have observed field effect mobilities up to 600 cm$^2$/Vs and on/off current ratios exceeding $10^5$. Importantly, Shubnikov-de Haas (SdH) oscillations observed in magnetotransport measurements up to 35 T reveal the presence of a 2-D hole gas with Schrodinger fermion character in an accumulation layer at the bP/oxide interface. Our work demonstrates that 2-D electronic structure and 2-D atomic structure are independent. 2-D carrier confinement can be achieved in layered semiconducting materials without necessarily approaching atomic layer thickness, advantageous for materials that become increasingly reactive in the few-layer limit such as bP.
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