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Anisotropic Particle-Hole Excitations in Black Phosphorus

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 Added by Roman Schuster
 Publication date 2015
  fields Physics
and research's language is English




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We report about the energy and momentum resolved optical response of black phosphorus (BP) in its bulk form. Along the armchair direction of the puckered layers we find a highly dispersive mode that is trongly suppressed in the perpendicular (zig-zag) direction. This mode emerges out of the single-particle continuum for finite values of momentum and is therefore interpreted as an exciton. We argue that this exciton, which has already been predicted theoretically for phosphorene -- the monolayer form of BP -- can be detected by conventional optical spectroscopy in the two-dimensional case and might pave the way for optoelectronic applications of this emerging material.



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Resistivity measurements of a few-layer black phosphorus (bP) crystal in parallel magnetic fields up to 45 T are reported as a function of the angle between the in-plane field and the source-drain (S-D) axis of the device. The crystallographic directions of the bP crystal were determined by Raman spectroscopy, with the zigzag axis found within 5{deg} of the S-D axis, and the armchair axis in the orthogonal planar direction. A transverse magneto-resistance (TMR) as well as a classically-forbidden longitudinal magneto-resistance (LMR) are observed. Both are found to be strongly anisotropic and non-monotonic with increasing in-plane field. Surprisingly, the relative magnitude (in %) of the positive LMR is larger than the TMR above $sim$32 T. Considering the known anisotropy of bP whose zigzag and armchair effective masses differ by a factor of approximately seven, our experiment strongly suggests this LMR to be a consequence of the anisotropic Fermi surface of bP.
Weak localization was observed and determined in a black phosphorus (bP) field-effect transistor 65 nm thick. The weak localization behaviour was found to be in excellent agreement with the Hikami-Larkin-Nagaoka model for fields up to 1~T, from which characteristic scattering lengths could be inferred. The dephasing length $L_phi$ was found to increase linearly with increasing hole density attaining a maximum value of 55 nm at a hole density of approximately $10^{13} cm^{-2}$ inferred from the Hall effect. The temperature dependence of $L_phi$ was also investigated and above 1~K, it was found to decrease weaker than the $L_phi propto T^{-frac{1}{2}}$ dependence characteristic of electron-electron scattering in the presence of elastic scattering in two dimensions. Rather, the observed power law was found to be close to that observed previously in other quasi-one-dimensional systems such as metallic nanowires and carbon nanotubes. We attribute our result to the crystal structure of bP which host a `puckered honeycomb lattice forming a strongly anisotropic medium
Recently, it was demonstrated that a graphene/dielectric/metal configuration can support acoustic plasmons, which exhibit extreme plasmon confinement an order of magnitude higher than that of conventional graphene plasmons. Here, we investigate acoustic plasmons supported in a monolayer and multilayers of black phosphorus (BP) placed just a few nanometers above a conducting plate. In the presence of a conducting plate, the acoustic plasmon dispersion for the armchair direction is found to exhibit the characteristic linear scaling in the mid- and far-infrared regime while it largely deviates from that in the long wavelength limit and near-infrared regime. For the zigzag direction, such scaling behavior is not evident due to relatively tighter plasmon confinement. Further, we demonstrate a new design for an acoustic plasmon resonator that exhibits higher plasmon confinement and resonance efficiency than BP ribbon resonators in the mid-infrared and longer wavelength regime. Theoretical framework and new resonator design studied here provide a practical route toward the experimental verification of the acoustic plasmons in BP and open up the possibility to develop novel plasmonic and optoelectronic devices that can leverage its strong in-plane anisotropy and thickness-dependent band gap.
Raman scattering and photoluminescence spectroscopy are used to investigate the optical properties of single layer black phosphorus obtained by mechanical exfoliation of bulk crystals under an argon atmosphere. The Raman spectroscopy, performed in situ on the same flake as the photoluminescence measurements, demonstrates the single layer character of the investigated samples. The emission spectra, dominated by excitonic effects, display the expected in plane anisotropy. The emission energy depends on the type of substrate on which the flake is placed due to the different dielectric screening. Finally, the blue shift of the emission with increasing temperature is well described using a two oscillator model for the temperature dependence of the band gap.
Layered and two-dimensional (2D) materials such as graphene, boron nitride, transition metal dichalcogenides(TMDCs), and black phosphorus (BP) have intriguing fundamental physical properties and bear promise of numerous important applications in electronics and optics. Of them, BP is a novel 2D material that has been theoretically predicted to acquire plasmonic behavior for frequencies below ~0.4 eV when highly doped. The electronic properties of BP are unique due to an anisotropic structure, which could strongly influence collective electronic excitations. Advantages of BP as a material for nanoelectronics and nanooptics are due to the fact that, in contrast to metals, the free carrier density in it can be dynamically controlled by electrostatic gating, which has been demonstrated by its use in field-effect transistors. Despite all the interest that BP attracts, near-field and plasmonic properties of BP have not yet been investigated experimentally. Here we report the first observation of nanoscopic near-field properties of BP. We have discovered near field patterns of outside bright fringes and high surface polarizability of nanofilm BP consistent with its surface-metallic, plasmonic behavior at mid-infrared (mid-IR) frequencies. This behavior is highly frequency-dispersive, disappearing above frequency, {omega} =1070 cm-1, which allowed us to estimate the plasma frequency and carrier density. We have also observed similar behavior in other 2D semiconductors such as TMDCs but not in 2D insulators such as boron nitride. This new phenomenon is attributed to surface charging of the semiconductor nanofilms. This discovery opens up a new field of research and potential applications in nanoplasmonics and optoelectronics.
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