No Arabic abstract
Neural networks span a wide range of applications of industrial and commercial significance. Binary neural networks (BNN) are particularly effective in trading accuracy for performance, energy efficiency or hardware/software complexity. Here, we introduce a spintronic, re-configurable in-memory BNN accelerator, PIMBALL: Processing In Memory BNN AcceL(L)erator, which allows for massively parallel and energy efficient computation. PIMBALL is capable of being used as a standard spintronic memory (STT-MRAM) array and a computational substrate simultaneously. We evaluate PIMBALL using multiple image classifiers and a genomics kernel. Our simulation results show that PIMBALL is more energy efficient than alternative CPU, GPU, and FPGA based implementations while delivering higher throughput.
A new spintronic nonvolatile memory cell analogous to 1T DRAM with non-destructive read is proposed. The cells can be used as neural computing units. A dual-circuit neural network architecture is proposed to leverage these devices against the complex operations involved in convolutional networks. Simulations based on HSPICE and Matlab were performed to study the performance of this architecture when classifying images as well as the effect of varying the size and stability of the nanomagnets. The spintronic cells outperform a purely charge-based implementation of the same network, consuming about 100 pJ total per image processed.
Magnetic skyrmions are emerging as potential candidates for next generation non-volatile memories. In this paper, we propose an in-memory binary neural network (BNN) accelerator based on the non-volatile skyrmionic memory, which we call as SIMBA. SIMBA consumes 26.7 mJ of energy and 2.7 ms of latency when running an inference on a VGG-like BNN. Furthermore, we demonstrate improvements in the performance of SIMBA by optimizing material parameters such as saturation magnetization, anisotropic energy and damping ratio. Finally, we show that the inference accuracy of BNNs is robust against the possible stochastic behavior of SIMBA (88.5% +/- 1%).
Traditional neural networks require enormous amounts of data to build their complex mappings during a slow training procedure that hinders their abilities for relearning and adapting to new data. Memory-augmented neural networks enhance neural networks with an explicit memory to overcome these issues. Access to this explicit memory, however, occurs via soft read and write operations involving every individual memory entry, resulting in a bottleneck when implemented using the conventional von Neumann computer architecture. To overcome this bottleneck, we propose a robust architecture that employs a computational memory unit as the explicit memory performing analog in-memory computation on high-dimensional (HD) vectors, while closely matching 32-bit software-equivalent accuracy. This is achieved by a content-based attention mechanism that represents unrelated items in the computational memory with uncorrelated HD vectors, whose real-valued components can be readily approximated by binary, or bipolar components. Experimental results demonstrate the efficacy of our approach on few-shot image classification tasks on the Omniglot dataset using more than 256,000 phase-change memory devices. Our approach effectively merges the richness of deep neural network representations with HD computing that paves the way for robust vector-symbolic manipulations applicable in reasoning, fusion, and compression.
RRAM-based in-Memory Computing is an exciting road for implementing highly energy efficient neural networks. This vision is however challenged by RRAM variability, as the efficient implementation of in-memory computing does not allow error correction. In this work, we fabricated and tested a differential HfO2-based memory structure and its associated sense circuitry, which are ideal for in-memory computing. For the first time, we show that our approach achieves the same reliability benefits as error correction, but without any CMOS overhead. We show, also for the first time, that it can naturally implement Binarized Deep Neural Networks, a very recent development of Artificial Intelligence, with extreme energy efficiency, and that the system is fully satisfactory for image recognition applications. Finally, we evidence how the extra reliability provided by the differential memory allows programming the devices in low voltage conditions, where they feature high endurance of billions of cycles.
The design of systems implementing low precision neural networks with emerging memories such as resistive random access memory (RRAM) is a major lead for reducing the energy consumption of artificial intelligence (AI). Multiple works have for example proposed in-memory architectures to implement low power binarized neural networks. These simple neural networks, where synaptic weights and neuronal activations assume binary values, can indeed approach state-of-the-art performance on vision tasks. In this work, we revisit one of these architectures where synapses are implemented in a differential fashion to reduce bit errors, and synaptic weights are read using precharge sense amplifiers. Based on experimental measurements on a hybrid 130 nm CMOS/RRAM chip and on circuit simulation, we show that the same memory array architecture can be used to implement ternary weights instead of binary weights, and that this technique is particularly appropriate if the sense amplifier is operated in near-threshold regime. We also show based on neural network simulation on the CIFAR-10 image recognition task that going from binary to ternary neural networks significantly increases neural network performance. These results highlight that AI circuits function may sometimes be revisited when operated in low power regimes.