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Register a new userMechanism of Synergistic Effects of Neutron- and Gamma-Ray-Radiated PNP Bipolar Transistors
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The synergistic effects of neutron and gamma ray radiated PNP transistors are systematically investigated as functions of the neutron fluence, gamma ray dose, and dose rate. We find that the damages show a `tick-like dependence on the gamma ray dose after the samples are radiated by neutrons. Two negative synergistic effects are derived, both of which have similar magnitudes as the ionization damage (ID) itself. The first one depends linearly on the gamma ray dose, whose slope depends quadratically on the initial displacement damage (DD) and can be attributed to the healing of neutron-radiation-induced defects in silicon. The second one has an exponential decay with the gamma ray dose, whose amplitude shows a rather strong enhanced low-dose-rate sensitivity (ELDRS) effect and can be attributed to the passivation of neutron-induced defects near the silica/silicon interface by the gamma-ray-generated protons in silica, which can penetrate the silica/silicon interface to passivate the neutron-induced defects in silicon. The simulated results based on the proposed model match the experimental data very well, but differ from previous model, which does not assume annihilation or passivation of the displacement defects. The unraveled defect annealing mechanism is important because it implies that displacement damages can be repaired by gamma ray radiation or proton diffusion, which can have important device applications in the space or other extreme environments.
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We report the design and development of a dual-functional magnetic nanoparticle platform for potential treatment of H. pylori infection. We show that an ultralow concentration of Mn0.3Fe2.7O4@SiO2 nanoparticles subjected to a moderate AC magnetic field, without bulk heating effect, can deposit heat locally and effectively inhibit H. pylori growth and virulence in vitro. When coupled with antibiotic amoxicillin, the dual-functional amoxicillin loaded Mn0.3Fe2.7O4@SiO2 further decreases the bacteria survival rate by a factor of 7 and 5, respectively, compared to amoxicillin treatment and nanoparticle heating alone. The synergistic effect can be partially attributed to the heating induced damage to the cell membrane and protective biofilm, which may increase the permeability of antibiotics to bacteria. Our method provides a viable approach to treat H. pylori infection, with the potential of reducing side effects and enhancing the efficacy for combating drug resistant strains.
The intrinsic performance of type-II InP/GaAsSb double heterojunction bipolar transistors (DHBTs) towards and beyond THz is predicted and analyzed based on a multi-scale technology computer aided design (TCAD) modeling platform calibrated against experimental measurements. Two-dimensional hydrodynamic simulations are combined with 1-D full-band, atomistic quantum transport calculations to shed light on future DHBT generations whose dimensions are decreased step-by-step, starting from the current device configuration. Simulations predict that a peak transit frequency $f_{T,peak}$ of around 1.6 THz could be reached in aggressively scaled type-II DHBTs with a total thickness of 256 nm and an emitter width $W_E$ of 37.5 nm. The corresponding breakdown voltage $BV_{CEO}$ is estimated to be 2.2 V. The investigations are put in perspective with two DHBT performance limiting factors, self-heating and breakdown characteristics.
We study the acoustical intensity field radiated by a thin cylindrical rod vibrating in its lowest compressional mode. Due to the cylindrical symmetry, the emitted field is measured in a radial plane of the rod which is sufficient to reconstruct the full three-dimensional field. Starting from the one-dimensional approximation of the excited compressional mode, we develop a simplified theoretical wave equation which allows for a semi-analytical solution for the emitted wave field. The agreement between the experimental results and the semi-analytical solution is eloquent.
Due to the lack of effective p-type doping in GaN and the adverse effects of surface band-bending of GaN on electron transport, developing practical GaN heterojunction bipolar transistors has been impossible. The recently demonstrated approach of grafting n-type GaN with p-type semiconductors, like Si and GaAs, by employing ultrathin (UO) Al$_2$O$_3$ at the interface of Si/GaN and GaAs/GaN, has shown the feasibility to overcome the poor p-type doping challenge of GaN by providing epitaxy-like interface quality. However, the surface band-bending of GaN that could be influenced by the UO Al2O3 has been unknown. In this work, the band-bending of c-plane, Ga-face GaN with UO Al2O3 deposition at the surface of GaN was studied using X-ray photoelectron spectroscopy (XPS). The study shows that the UO Al2O3 can help in suppressing the upward band-bending of the c-plane, Ga-face GaN with a monotonic reduction trend of the upward band-bending energy from 0.48 eV down to 0.12 eV as the number of UO Al2O3 deposition cycles is increased from 0 to 20 cycles. The study further shows that the band-bending can be mostly recovered after removing the Al2O3 layer, concurring that the change in the density of fixed charge at the GaN surface caused by UO Al2O3 is the main reason for the surface band-bending modulation. The potential implication of the surface band-bending results of AlGaAs/GaAs/GaN npn heterojunction bipolar transistor (HBT) was preliminarily studied via Silvaco(R) simulations.
$^{222}$Rn is a noble radioactive gas produced along the $^{238}$U decay chain, which is present in the majority of soils and rocks. As $^{222}$Rn is the most relevant source of natural background radiation, understanding its distribution in the environment is of great concern for investigating the health impacts of low-level radioactivity and for supporting regulation of human exposure to ionizing radiation in modern society. At the same time, $^{222}$Rn is a widespread atmospheric tracer whose spatial distribution is generally used as a proxy for climate and pollution studies. Airborne gamma-ray spectroscopy (AGRS) always treated $^{222}$Rn as a source of background since it affects the indirect estimate of equivalent $^{238}$U concentration. In this work the AGRS method is used for the first time for quantifying the presence of $^{222}$Rn in the atmosphere and assessing its vertical profile. High statistics radiometric data acquired during an offshore survey are fitted as a superposition of a constant component due to the experimental setup background radioactivity plus a height dependent contribution due to cosmic radiation and atmospheric $^{222}$Rn. The refined statistical analysis provides not only a conclusive evidence of AGRS $^{222}$Rn detection but also a (0.96 $pm$ 0.07) Bq/m$^{3}$ $^{222}$Rn concentration and a (1318 $pm$ 22) m atmospheric layer depth fully compatible with literature data.
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