Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userSeparating Electrons and Donors in BaSnO3 via Band Engineering
100
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Through a combination of thin film growth, hard X-ray photoelectron spectroscopy (HAXPES), scanning transmission electron microscopy/electron energy loss spectroscopy (STEM/EELS), magneto-transport measurements, and transport modeling, we report on the demonstration of modulation-doping of BaSnO3 (BSO) using a wider bandgap La-doped SrSnO3 (LSSO) layer. Hard X-ray photoelectron spectroscopy (HAXPES) revealed a valence band offset of 0.71 +/- 0.02 eV between LSSO and BSO resulting in a favorable conduction band offset for remote doping of BSO using LSSO. Nonlinear Hall effect of LSSO/BSO heterostructure confirmed two-channel conduction owing to electron transfer from LSSO to BSO and remained in good agreement with the results of self-consistent solution to one-dimensional Poisson and Schrodinger equations. Angle-dependent HAXPES measurements revealed a spatial distribution of electrons over 2-3 unit cells in BSO. These results bring perovskite oxides a step closer to room-temperature oxide electronics by establishing modulation-doping approaches in non-SrTiO3-based oxide heterostructure.
rate research
Read More
Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate direct-band-gap Ge-Sn alloys. The heavily doped n-type Ge-Sn is realized with CMOS-compatible nonequilibrium material processing. P is used to form highly doped n-type Ge-Sn layers and to modify the lattice parameter of P-doped Ge-Sn alloys. The strain engineering in heavily-P-doped Ge-Sn films is confirmed by x-ray diffraction and micro Raman spectroscopy. The change of the band gap in P-doped Ge-Sn alloy as a function of P concentration is theoretically predicted by density functional theory and experimentally verified by near-infrared spectroscopic ellipsometry. According to the shift of the absorption edge, it is shown that for an electron concentration greater than 1x10^20 cm-3 the band-gap renormalization is partially compensated by the Burstein-Moss effect. These results indicate that Ge-based materials have high potential for use in near-infrared optoelectronic devices, fully compatible with CMOS technology.
We propose energy band engineering to enhance tunneling electroresistance (TER) in ferroelectric tunnel junctions (FTJs). We predict that an ultrathin dielectric layer with a smaller band gap, embedded into a ferroelectric barrier layer, acts as a switch controlling high and low conductance states of an FTJ depending on polarization orientation. Using first-principles modeling based on density functional theory, we investigate this phenomenon for a prototypical SrRuO3/BaTiO3/SrRuO3 FTJ with a BaSnO3 monolayer embedded in the BaTiO3 barrier. We show that in such a composite-barrier FTJ, ferroelectric polarization of BaTiO3 shifts the conduction band minimum of the BaSnO3 monolayer above or below the Fermi energy depending on polarization orientation. The resulting switching between direct and resonant tunneling leads to a TER effect with a giant ON/OFF conductance ratio. The proposed resonant band engineering of FTJs can serve as a viable tool to enhance their performance useful for device application.
Besides its predicted promising high electron mobilities at room temperature, PtSe2 bandgap sensitively depends on the number of monolayers combined by van der Waals interaction according to our calculations. We understand this by using bandstructure calculations based on the density functional theory. It was found that the front orbitals of VBM and CBM are contributed mainly from pz and px+y orbitals of Se which are sensitive to the out-plane and in-plane lattice constants, respectively. The van der Waals force enhances the bonding out-of-plane, which in-turn influences the bonding in-plane. We found that the thickness dependent bandgap has the same origin as the strain dependent bandgap, which is from the change of the front orbital interactions. The work shows the flexibilities of tuning the electronic and optical properties of this compound in a wide range.
By band engineering the iron chalcogenide Fe(Se,Te) via ab-initio calculations, we search for topological surface states and realizations of Majorana bound states. Proposed topological states are expected to occur for non-stoichiometric compositions on a surface Dirac cone where issues like disorder scattering and charge transfer between relevant electronic states have to be addressed. However, this surface Dirac cone is well above the Fermi-level. Our goal is to theoretically design a substituted crystal in which the surface Dirac cone is shifted towards the Fermi-level by modifying the bulk material without disturbing the surface. Going beyond conventional density functional theory (DFT), we apply the coherent potential approximation (BEB-CPA) in a mixed basis pseudo-potential framework to scan the substitutional phase-space of co-substitutions on the Se-sites. We have identified iodine as a promising candidate for intrinsic doping. Our specific proposal is that FeSe$_{0.325}$I$_{0.175}$Te$_{0.5}$ is a very likely candidate to exhibit a Dirac cone right at the Fermi energy without inducing strong disorder scattering.
Wide-bandgap perovskite stannates are of interest for the emergent all-oxide transparent electronic devices due to their unparalleled room temperature electron mobility. Considering the advantage of amorphous material in integrating with non-semiconductor platforms, we herein reported the optical and electronic properties in the prototypical stannate, amorphous barium stannate (BaSnO3) thin films, which were deposited at room temperature and annealed at various temperatures. Despite remaining amorphous status, with increasing the annealing temperature, the defect level within amorphous BaSnO3 thin films could be suppressed.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
