Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userSpin-valley Hall transport induced by spontaneous symmetry breaking in half-filled zero Landau level of bilayer graphene
108
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Intrinsic Hall conductivity, emerging when chiral symmetry is broken, is at the heart of future low energy consumption devices because it can generate non-dissipative charge neutral current. A symmetry breaking state is also induced by electronic correlation even for the centro-symmetric crystalline materials. However, generation of non-dissipative charge neutral current by intrinsic Hall conductivity induced by such spontaneous symmetry breaking is experimentally elusive. Here we report intrinsic Hall conductivity and generation of a non-dissipative charge neutral current in a spontaneous antiferromagnetic state of zero Landau level of bilayer graphene, where spin and valley contrasting Hall conductivity has been theoretically predicted. We performed nonlocal transport experiment and found cubic scaling relationship between the local and nonlocal resistance, as a striking evidence of the intrinsic Hall effect. Observation of such spontaneous Hall transport is a milestone toward understanding the electronic correlation effect on the non-dissipative transport. Our result also paves a way toward electrical generation of a spin current in non-magnetic graphene via coupling of spin and valley in this symmetry breaking state combined with the valley Hall effect.
rate research
Read More
The quantum Hall effect near the charge neutrality point in bilayer graphene is investigated in high magnetic fields of up to 35 T using electronic transport measurements. In the high field regime, the eight-fold degeneracy in the zero energy Landau level is completely lifted, exhibiting new quantum Hall states corresponding filling factors $ u=$0, 1, 2, & 3. Measurements of the activation energy gap in tilted magnetic fields suggest that the Landau level splitting at the newly formed $ u=$1, 2, & 3 filling factors are independent of spin, consistent with the formation of a quantum Hall ferromagnet. In addition, measurements taken at the $ u$ = 0 charge neutral point show that, similar to single layer graphene, the bilayer becomes insulating at high fields.
Landau level gaps are important parameters for understanding electronic interactions and symmetry-broken processes in bilayer graphene (BLG). Here we present transport spectroscopy measurements of LL gaps in double-gated suspended BLG with high mobilities in the quantum Hall regime. By using bias as a spectroscopic tool, we measure the gap {Delta} for the quantum Hall (QH) state at filling factor { u}={pm}4 and -2. The single-particle gap for { u}=4 scales linearly with magnetic field B and is independent of the out-of-plane electric field E. For the symmetry-broken { u}=-2 state, the measured values of gap are 1.1 meV/T and 0.17 meV/T for singly-gated geometry and dual-gated geometry at E=0, respectively. The difference between the two values arises from the E-dependence of the gap, suggesting that the { u}=-2 state is layer polarized. Our studies provide the first measurements of the gaps of the broken symmetry QH states in BLG with well-controlled E, and establish a robust method that can be implemented for studying similar states in other layered materials.
The Coulomb gap observed in tunneling between parallel two-dimensional electron systems, each at half filling of the lowest Landau level, is found to depend sensitively on the presence of an in-plane magnetic field. Especially at low electron density, the width of the Coulomb gap at first increases sharply with in-plane field, but then abruptly levels off. This behavior appears to coincide with the known transition from partial to complete spin polarization of the half-filled lowest Landau level. The tunneling gap therefore opens a new window onto the spin configuration of two-dimensional electron systems at high magnetic field.
Nonabelian anyons offer the prospect of storing quantum information in a topological qubit protected from decoherence, with the degree of protection determined by the energy gap separating the topological vacuum from its low lying excitations. Originally proposed to occur in quantum wells in high magnetic fields, experimental systems thought to harbor nonabelian anyons range from p-wave superfluids to superconducting systems with strong spin orbit coupling. However, all of these systems are characterized by small energy gaps, and despite several decades of experimental work, definitive evidence for nonabelian anyons remains elusive. Here, we report the observation of arobust, incompressible even-denominator fractional quantum Hall phase in a new generation of dual-gated, hexagonal boron nitride encapsulated bilayer graphene samples. Numerical simulations suggest that this state is in the Pfaffian phase and hosts nonabelian anyons, and the measured energy gaps are several times larger than those observed in other systems. Moreover, the unique electronic structure of bilayer graphene endows the electron system with two new control parameters. Magnetic field continuously tunes the effective electron interactions, changing the even-denominator gap non-monotonically and consistent with predictions that a transition between the Pfaffian phase and the composite Fermi liquid (CFL) occurs just beyond the experimentally explored magnetic field range. Electric field, meanwhile, tunes crossings between levels from different valleys. By directly measuring the valley polarization, we observe a continuous transition from an incompressible to a compressible phase at half-filling mediated by an unexpected incompressible, yet polarizable, intermediate phase. Valley conservation implies this phase is an electrical insulator with gapless neutral excitations.
Van der Waals heterostructures provide a rich platform for emergent physics due to their tunable hybridization of electronic orbital- and spin-degrees of freedom. Here, we show that a heterostructure formed by twisted bilayer graphene sandwiched between ferromagnetic insulators develops flat bands stemming from the interplay between twist, exchange proximity and spin-orbit coupling. We demonstrate that in this flat-band regime, the spin degree of freedom is hybridized, giving rise to an effective triangular superlattice with valley as a degenerate pseudospin degree of freedom. Incorporating electronic interactions at half-filling leads to a spontaneous valley-mixed state, i.e., a correlated state in the valley sector with geometric frustration of the valley spinor. We show that an electric interlayer bias generates an artificial valley-orbit coupling in the effective model, controlling both the valley anisotropy and the microscopic details of the correlated state, with both phenomena understood in terms of a valley-Heisenberg model with easy-plane anisotropic exchange. Our results put forward twisted graphene encapsulated between magnetic van der Waals heterostructures as platforms to explore purely valley-correlated states in graphene.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
