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Register a new userHigh quality factor polariton resonators using van der Waals materials
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We present high quality factor optical nanoresonators operating in the mid-IR to far-IR based on phonon polaritons in van der Waals materials. The nanoresonators are disks patterned from isotopically pure hexagonal boron nitride (isotopes 10B and 11B) and {alpha}-molybdenum trioxide. We experimentally achieved quality factors of nearly 400, the highest ever observed in nano-resonators at these wavelengths. The excited modes are deeply subwavelength, and the resonators are 10 to 30 times smaller than the exciting wavelength. These results are very promising for the realization of nano-photonics devices such as optical bio-sensors and miniature optical components such as polarizers and filters.
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Metasurfaces with strongly anisotropic optical properties can support deep subwavelength-scale confined electromagnetic waves (polaritons) that promise opportunities for controlling light in photonic and optoelectronic applications. We develop a mid-infrared hyperbolic metasurface by nanostructuring a thin layer of hexagonal boron nitride supporting deep subwavelength-scale phonon polaritons that propagate with in-plane hyperbolic dispersion. By applying an infrared nanoimaging technique, we visualize the concave (anomalous) wavefronts of a diverging polariton beam, which represent a landmark feature of hyperbolic polaritons. The results illustrate how near-field microscopy can be applied to reveal the exotic wavefronts of polaritons in anisotropic materials, and demonstrate that nanostructured van der Waals materials can form a highly variable and compact platform for hyperbolic infrared metasurface devices and circuits.
Polar van der Waals (vdW) crystals that support phonon polaritons have recently attracted much attention because they can confine infrared and terahertz (THz) light to deeply subwavelength dimensions, allowing for the guiding and manipulation of light at the nanoscale. The practical applications of these crystals in devices rely strongly on deterministic engineering of their spatially localized electromagnetic field distributions, which has remained challenging. This study demonstrates that polariton interference can be enhanced and tailored by patterning the vdW crystal {alpha}-MoO3 into microstructures that support highly in-plane anisotropic phonon polaritons. The orientation of the polaritonic in-plane isofrequency curve relative to the microstructure edges is a critical parameter governing the polariton interference, rendering the configuration of infrared electromagnetic field localizations by enabling the tuning of the microstructure size and shape and the excitation frequency. Thus, our study presents an effective rationale for engineering infrared light flow in planar photonic devices.
Quantum computers can potentially achieve an exponential speedup versus classical computers on certain computational tasks, as recently demonstrated in systems of superconducting qubits. However, these qubits have large footprints due to their large capacitor electrodes needed to suppress losses by avoiding dielectric materials. This tactic hinders scaling by increasing parasitic coupling among circuit components, degrading individual qubit addressability, and limiting the spatial density of qubits. Here, we take advantage of the unique properties of the van der Waals (vdW) materials to reduce the qubit area by a factor of $>1000$ while preserving the required capacitance without increasing substantial loss. Our qubits combine conventional aluminum-based Josephson junctions with parallel-plate capacitors composed of crystalline layers of superconducting niobium diselenide (NbSe$_2$) and insulating hexagonal-boron nitride (hBN). We measure a vdW transmon $T_1$ relaxation time of 1.06 $mu$s, which demonstrates a path to achieve high-qubit-density quantum processors with long coherence times, and illustrates the broad utility of layered heterostructures in low-loss, high-coherence quantum devices.
The exfoliation of two naturally occurring van der Waals minerals, graphite and molybdenite, arouse an unprecedented level of interest by the scientific community and shaped a whole new field of research: 2D materials research. Several years later, the family of van der Waals materials that can be exfoliated to isolate 2D materials keeps growing, but most of them are synthetic. Interestingly, in nature plenty of naturally occurring van der Waals minerals can be found with a wide range of chemical compositions and crystal structures whose properties are mostly unexplored so far. This Perspective aims to provide an overview of different families of van der Waals minerals to stimulate their exploration in the 2D limit.
Paper holds the promise to replace silicon substrates in applications like internet of things or disposable electronics that require ultra-low-cost electronic components and an environmentally friendly electronic waste management. In the last years, spurred by the abovementioned properties of paper as a substrate and the exceptional electronic, mechanical and optical properties of van der Waals (vdW) materials, many research groups have worked towards the integration of vdW materials-based devices on paper. Recently, a method to deposit a continuous film of densely packed interconnects of vdW materials on paper by simply rubbing the vdW crystals against the rough surface of paper has been presented. This method utilizes the weak interlayer vdW interactions and allows cleaving of the crystals into micro platelets through the abrasion against the paper. Here, we aim to illustrate the general character and the potential of this technique by fabricating films of 39 different vdW materials (including superconductors, semi-metals, semiconductors, and insulators) on standard copier paper. We have thoroughly characterized their optical properties showing their high optical quality: one can easily resolve the absorption band edge of semiconducting vdW materials and even the excitonic features present in some vdW materials with high exciton binding energy. We also measured the electrical resistivity for several vdW materials films on paper finding exceptionally low values, which are in some cases, orders of magnitude lower than those reported for analogous films produced by inkjet printing. We finally demonstrate the fabrication of field-effect devices with vdW materials on paper using the paper substrate as an ionic gate.
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