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Optomechanical measurement of thermal transport in two-dimensional MoSe2 lattices

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 Added by Nicolas Morell
 Publication date 2019
  fields Physics
and research's language is English




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Nanomechanical resonators have emerged as sensors with exceptional sensitivities. These sensing capabilities open new possibilities in the studies of the thermodynamic properties in condensed matter. Here, we use mechanical sensing as a novel approach to measure the thermal properties of low-dimensional materials. We measure the temperature dependence of both the thermal conductivity and the specific heat capacity of a transition metal dichalcogenide (TMD) monolayer down to cryogenic temperature, something that has not been achieved thus far with a single nanoscale object. These measurements show how heat is transported by phonons in two-dimensional systems. Both the thermal conductivity and the specific heat capacity measurements are consistent with predictions based on first-principles.



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Recent advances in cavity-optomechanics have now made it possible to use light not just as a passive measuring device of mechanical motion, but also to manipulate the motion of mechanical objects down to the level of individual quanta of vibrations (phonons). At the same time, microfabrication techniques have enabled small-scale optomechanical circuits capable of on-chip manipulation of mechanical and optical signals. Building on these developments, theoretical proposals have shown that larger scale optomechanical arrays can be used to modify the propagation of phonons, realizing a form of topologically protected phonon transport. Here, we report the observation of topological phonon transport within a multiscale optomechanical crystal structure consisting of an array of over $800$ cavity-optomechanical elements. Using sensitive, spatially resolved optical read-out we detect thermal phonons in a $0.325-0.34$GHz band traveling along a topological edge channel, with substantial reduction in backscattering. This represents an important step from the pioneering macroscopic mechanical systems work towards topological phononic systems at the nanoscale, where hypersonic frequency ($gtrsim$GHz) acoustic wave circuits consisting of robust delay lines and non-reciprocal elements may be implemented. Owing to the broadband character of the topological channels, the control of the flow of heat-carrying phonons, albeit at cryogenic temperatures, may also be envisioned.
The strong excitonic effect in monolayer transition metal dichalcogenide (TMD) semiconductors has enabled many fascinating light-matter interaction phenomena. Examples include strongly coupled exciton-polaritons and nearly perfect atomic monolayer mirrors. The strong light-matter interaction also opens the door for dynamical control of mechanical motion through the exciton resonance of monolayer TMDs. Here we report the observation of exciton-optomechanical coupling in a suspended monolayer MoSe2 mechanical resonator. By moderate optical pumping near the MoSe2 exciton resonance, we have observed optical damping and anti-damping of mechanical vibrations as well as the optical spring effect. The exciton-optomechanical coupling strength is also gate-tunable. Our observations can be understood in a model based on photothermal backaction and gate-induced mirror symmetry breaking in the device structure. The observation of gate-tunable exciton-optomechanical coupling in a monolayer semiconductor may find applications in nanoelectromechanical systems (NEMS) and in exciton-optomechanics.
We discuss the interband light tunneling in a two-dimensional periodic photonic structure, as was studied recently in experiments for optically-induced photonic lattices [H. Trompeter et al., Phys. Rev. Lett. textbf{96}, 053903 (2006)]. We identify the Zener tunneling regime at the crossing of two Bloch bands, which occurs in a generic case of the Bragg reflection when the Bloch index crosses the edge of the irreducible Brillouin zone. Similarly, the higher-order Zener tunneling involves four Bloch bands when the Bloch index passes through a high-symmetry point on the edge of the Brillouin zone. We derive simple analytical models that describe the tunneling effect, and calculate the corresponding tunneling probabilities.
139 - B. Real , O. Jamadi , M. Milicevic 2020
Compression dramatically changes the transport and localization properties of graphene. This is intimately related to the change of symmetry of the Dirac cone when the particle hopping is different along different directions of the lattice. In particular, for a critical compression, a semi-Dirac cone is formed with massless and massive dispersions along perpendicular directions. Here we show direct evidence of the highly anisotropic transport of polaritons in a honeycomb lattice of coupled micropillars implementing a semi-Dirac cone. If we optically induce a vacancy-like defect in the lattice, we observe an anisotropically localized polariton distribution in a single sublattice, a consequence of the semi-Dirac dispersion. Our work opens up new horizons for the study of transport and localization in lattices with chiral symmetry and exotic Dirac dispersions.
Layered materials have uncommonly anisotropic thermal properties due to their strong in-plane covalent bonds and weak out-of-plane van der Waals interactions. Here we examine heat flow in graphene (graphite), h-BN, MoS2, and WS2 monolayers and bulk films, from diffusive to ballistic limits. We determine the ballistic thermal conductance limit (Gball) both in-plane and out-of-plane, based on full phonon dispersions from first-principles calculations. An overall phonon mean free path ({lambda}) is expressed in terms of Gball and the diffusive thermal conductivity, consistent with kinetic theory if proper averaging of phonon group velocity is used. We obtain a size-dependent thermal conductivity k(L) in agreement with available experiments, and find that k(L) only converges to >90% of the diffusive thermal conductivity for sample sizes L > 16{lambda}, which ranges from ~140 nm for MoS2 cross-plane to ~10 um for suspended graphene in-plane. These results provide a deeper understanding of microscopic thermal transport, revealing that device scales below which thermal size effects should be taken into account are generally larger than previously thought.
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