Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userAtomic-scale Control of Tunnel Coupling
64
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Atomically precise donor-based quantum devices are a promising candidate for scalable solid-state quantum computing. Atomically precise design and implementation of the tunnel coupling in these devices is essential to realize gate-tunable exchange coupling, and electron spin initialization and readout. Current efforts in atomically precise lithography have enabled deterministic placement of single dopant atoms into the Si lattice with sub-nm precision. However, critical challenges in atomically precise fabrication have meant systematic, atomic-scale control of the tunneling coupling has not been demonstrated. Here using a room-temperature grown locking layer and precise control over the entire atomic-scale fabrication process, we demonstrate atomic-scale control of the tunnel coupling in atomically precise single-electron transistors (SETs). Using the naturally occurring Si (100) 2x1 surface reconstruction lattice as an atomically-precise ruler, we systematically vary the number of lattice counts within the tunnel junction gaps and demonstrate exponential scaling of the tunneling resistance at the atomic limit. Using low-temperature transport measurements, we characterize the tunnel coupling asymmetry in a pair of nominally identical tunnel gaps that results from atomic-scale variation in the tunnel junction and show a resistance difference of four that corresponds to half a dimer row pitch difference in the effective tunnel gap distances - the intrinsic limit of hydrogen lithography precision on Si (100) 2x1 surfaces. Our results demonstrate the key capability to do atom-scale design and engineering of the tunnel coupling necessary for solid-state quantum computing and analog quantum simulation.
rate research
Read More
We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate, in three devices based on two differe
Electrostatically-defined semiconductor quantum dot arrays offer a promising platform for quantum computation and quantum simulation. However, crosstalk of gate voltages to dot potentials and inter-dot tunnel couplings complicates the tuning of the device parameters. To date, crosstalk to the dot potentials is routinely and efficiently compensated using so-called virtual gates, which are specific linear combinations of physical gate voltages. However, due to exponential dependence of tunnel couplings on gate voltages, crosstalk to the tunnel barriers is currently compensated through a slow iterative process. In this work, we show that the crosstalk on tunnel barriers can be efficiently characterized and compensated for, using the fact that the same exponential dependence applies to all gates. We demonstrate efficient calibration of crosstalk in a quadruple quantum dot array and define a set of virtual barrier gates, with which we show orthogonal control of all inter-dot tunnel couplings. Our method marks a key step forward in the scalability of the tuning process of large-scale quantum dot arrays.
An optical nanoantenna and adjacent atomic systems are strongly coupled when an excitation is repeatedly exchanged between these subsystems prior to its eventual dissipation into the environment. It remains challenging to reach the strong coupling regime but it is equally rewarding. Once being achieved, promising applications as signal processing at the nanoscale and at the single photon level would immediately come into reach. Here, we study such hybrid configuration from different perspectives. The configuration we consider consists of two identical atomic systems, described in a two-level approximation, which are strongly coupled to an optical nanoantenna. First, we investigate when this hybrid system requires a fully quantum description and provide a simple analytical criterion. Second, a design for a nanoantenna is presented that enables the strong coupling regime. Besides a vivid time evolution, the strong coupling is documented in experimentally accessible quantities, such as the extinction spectra. The latter are shown to be strongly modified if the hybrid system is weakly driven and operates in the quantum regime. We find that the extinction spectra depend sensitively on the number of atomic systems coupled to the nanoantenna.
Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk bandstructure of silicon, which has six degenerate electronic minima. The degeneracy can be lifted in silicon quantum wells due to strain and electronic confinement, but the valley splitting of the two lowest lying valleys is known to be sensitive to atomic-scale disorder. Large valley splittings are desirable to have a well-defined spin qubit. In addition, an understanding of the inter-valley tunnel coupling that couples different valleys in adjacent quantum dots is extremely important, as the resulting gaps in the energy level diagram may affect the fidelity of charge and spin transfer protocols in silicon quantum dot arrays. Here we use microwave spectroscopy to probe spatial variations in the valley splitting, and the intra- and inter-valley tunnel couplings ($t_{ij}$ and $t_{ij}$) that couple dots $i$ and $j$ in a triple quantum dot (TQD). We uncover large spatial variations in the ratio of inter-valley to intra-valley tunnel couplings $t_{12}/t_{12}=0.90$ and $t_{23}/t_{23}=0.56$. By tuning the interdot tunnel barrier we also show that $t_{ij}$ scales linearly with $t_{ij}$, as expected from theory. The results indicate strong interactions between different valley states on neighboring dots, which we attribute to local inhomogeneities in the silicon quantum well.
Spin transmission at ferromagnet/heavy metal interfaces is of vital importance for many spintronic devices. Usually the spin current transmission is limited by the spin mixing conductance and loss mechanisms such as spin memory loss. In order to understand these effects, we study the interface transmission when an insulating interlayer is inserted between the ferromagnet and the heavy metal. For this we measure the inverse spin Hall voltage generated from optically injected spin current pulses as well as the magnitude of the spin pumping using ferromagnetic resonance. From our results we conclude that significant spin memory loss only occurs for 5d metals with less than half filled d-shell.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
