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Register a new userNon-volatile silicon photonic memory with more than 4-bit per cell capability
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We present the first demonstration of an integrated photonic phase-change memory using GeSbTe-225 on silicon-on-insulator and demonstrate reliable multilevel operation with a single programming pulse. We also compare our results on silicon with previous demonstrations on silicon nitride. Crucially, achieving this on silicon enables tighter integration of traditional electronics with photonic memories in future, making phase-change photonic memory a viable and integrable technology.
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Fast, byte-addressable non-volatile memory (NVM) embraces both near-DRAM latency and disk-like persistence, which has generated considerable interests to revolutionize system software stack and programming models. However, it is less understood how NVM can be combined with managed runtime like Java virtual machine (JVM) to ease persistence management. This paper proposes Espresso, a holistic extension to Java and its runtime, to enable Java programmers to exploit NVM for persistence management with high performance. Espresso first provides a general persistent heap design called Persistent Java Heap (PJH) to manage persistent data as normal Java objects. The heap is then strengthened with a recoverable mechanism to provide crash consistency for heap metadata. It then provides a new abstraction called Persistent Java Object (PJO) to provide an easy-to-use but safe persistent programming model for programmers to persist application data. The evaluation confirms that Espresso significantly outperforms state-of-art NVM support for Java (i.e., JPA and PCJ) while being compatible to existing data structures in Java programs.
Optical beamforming networks (OBFNs) based on optical true time delay lines (OTTDLs) are well-known as the promising candidate to solve the bandwidth limitation of traditional electronic phased array antennas (PAAs) due to beam squinting. Here we report the first monolithic 1x8 microwave photonic beamformer based on switchable OTTDLs on the silicon-on-insulator platform. The chip consists of a modulator, an eight-channel OBFN, and 8 photodetectors, which includes hundreds of active and passive components in total. It has a wide operating bandwidth from 8 to 18 GHz, which is almost two orders larger than that of electronic PAAs. The beam can be steered to 31 distinguishable angles in the range of -75.51{deg} to 75.64{deg} based on the beam pattern calculation with the measured RF response. The response time for beam steering is 56 {mu}s. These results represent a significant step towards the realization of integrated microwave photonic beamformers that can satisfy compact size and low power consumption requirements for the future radar and wireless communication systems.
Encoding information in the position of single photons has no known limits, given infinite resources. Using a heralded single-photon source and a Spatial Light Modulator (SLM), we steer single photons to specific positions in a virtual grid on a large-area spatially resolving photon-counting detector (ICCD). We experimentally demonstrate selective addressing any location (symbol) in a 9072 size grid (alphabet) to achieve 10.5 bit of mutual information between the sender and receiver per detected photon. Our results set the stage for very-high-dimensional quantum information processing.
Opto-mechanical interactions in planar photonic integrated circuits draw great interest in basic research and applications. However, opto-mechanics is practically absent in the most technologically significant photonics platform: silicon on insulator. Previous demonstrations required the under-etching and suspension of silicon structures. Here we present surface acoustic wave-photonic devices in silicon on insulator, up to 8 GHz frequency. Surface waves are launched through absorption of modulated pump light in metallic gratings and thermoelastic expansion. The surface waves are detected through photo-elastic modulation of an optical probe in standard race-track resonators. Devices do not involve piezo-electric actuation, suspension of waveguides or hybrid material integration. Wavelength conversion of incident microwave signals and acoustic true time delays up to 40 ns are demonstrated on-chip. Lastly, discrete-time microwave-photonic filters with up to six taps and 20 MHz wide passbands are realized using acoustic delays. The concept is suitable for integrated microwave-photonics signal processing
All-dielectric resonant micro- and nano-structures made of the high-index dielectrics recently emerge as a promising SERS platform which can complement or potentially replace the metal-based counterparts in routine sensing measurements. These unique structures combine the highly-tunable optical response and high field enhancement with the non-invasiveness, i.e., chemically non-perturbing the analyte, simple chemical modification and recyclability. Meanwhile, the commercially competitive fabrication technologies for mass production of such structures are still missing. Here, we attest a chemically inert black silicon (b-Si) substrate consisting of randomly-arranged spiky Mie resonators for a true non-invasive SERS identification of the molecular fingerprints at low concentrations. Based on comparative in-situ SERS tracking of the para-aminothiophenol -to-4,4` dimercaptoazobenzene catalytic conversion on the bare and metal-coated b-Si, we justify applicability of the metal-free b-Si for the ultra-sensitive non-invasive SERS detection at concentration level as low as 10^-6 M. We perform finite-difference time-domain calculations to reveal the electromagnetic enhancement provided by an isolated spiky Si resonator in the visible spectral range. Additional comparative SERS studies of the PATP-to-DMAB conversion performed with a chemically active bare black copper oxide as well as SERS detection of the slow daylight-driven PATP-to-DAMP catalytic conversion in the aqueous methanol solution loaded with colloidal silver nanoparticles confirm the non-invasive SERS performance of the all-dielectric crystalline b-Si substrate. Proposed SERS substrate can be fabricated using simple scalable technology of plasma etching amenable on large substrate areas making such inexpensive all-dielectric substrates promising for routine SERS applications, where the non-invasiveness is of mandatory importance.
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