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Register a new userDirect Measurement of Quantum Efficiency of Single Photon Emitters in Hexagonal Boron Nitride
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Single photon emitters in two-dimensional materials are promising candidates for future generation of quantum photonic technologies. In this work, we experimentally determine the quantum efficiency (QE) of single photon emitters (SPE) in few-layer hexagonal boron nitride (hBN). We employ a metal hemisphere that is attached to the tip of an atomic force microscope to directly measure the lifetime variation of the SPEs as the tip approaches the hBN. This technique enables non-destructive, yet direct and absolute measurement of the QE of SPEs. We find that the emitters exhibit very high QEs approaching $(87 pm 7),%$ at wavelengths of $approx,580,mathrm{nm}$, which is amongst the highest QEs recorded for a solid state single photon emitter.
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Color centers in 2-dimensional hexagonal boron nitride (h-BN) have recently emerged as stable and bright single-photon emitters (SPEs) operating at room temperature. In this study, we combine theory and experiment to show that vacancy-based SPEs selectively form at nano-scale wrinkles in h-BN with its optical dipole preferentially aligned to the wrinkle direction. By using density functional theory calculations, we find that the wrinkle curvature plays a crucial role in localizing vacancy-based SPE candidates and aligning the defects symmetry plane to the wrinkle direction. By performing optical measurements on SPEs created in h-BN single-crystal flakes, we experimentally confirm the wrinkle-induced generation of SPEs and their polarization alignment to the wrinkle direction. Our results not only provide a new route to controlling the atomic position and the optical property of the SPEs but also revealed the possible crystallographic origin of the SPEs in h-BN, greatly enhancing their potential for use in solid-state quantum photonics and quantum information processing.
Hexagonal boron nitride (h-BN) is a tantalizing material for solid-state quantum engineering. Analogously to three-dimensional wide-bandgap semiconductors like diamond, h-BN hosts isolated defects exhibiting visible fluorescence, and the ability to position such quantum emitters within a two-dimensional material promises breakthrough advances in quantum sensing, photonics, and other quantum technologies. Critical to such applications, however, is an understanding of the physics underlying h-BNs quantum emission. We report the creation and characterization of visible single-photon sources in suspended, single-crystal, h-BN films. The emitters are bright and stable over timescales of several months in ambient conditions. With substrate interactions eliminated, we study the spectral, temporal, and spatial characteristics of the defects optical emission, which offer several clues about their electronic and chemical structure. Analysis of the defects spectra reveals similarities in vibronic coupling despite widely-varying fluorescence wavelengths, and a statistical analysis of their polarized emission patterns indicates a correlation between the optical dipole orientations of some defects and the primitive crystallographic axes of the single-crystal h-BN film. These measurements constrain possible defect models, and, moreover, suggest that several classes of emitters can exist simultaneously in free-standing h-BN, whether they be different defects, different charge states of the same defect, or the result of strong local perturbations.
Hexagonal boron nitride (h-BN), a prevalent insulating crystal for dielectric and encapsulation layers in two-dimensional (2D) nanoelectronics and a structural material in 2D nanoelectromechanical systems (NEMS), has also rapidly emerged as a promising platform for quantum photonics with the recent discovery of optically active defect centers and associated spin states. Combined with measured emission characteristics, here we propose and numerically investigate the cavity quantum electrodynamics (cavity-QED) scheme incorporating these defect-enabled single photon emitters (SPEs) in h-BN microdisk resonators. The whispering-gallery nature of microdisks can support multiple families of cavity resonances with different radial and azimuthal mode indices simultaneously, overcoming the challenges in coinciding a single point defect with the maximum electric field of an optical mode both spatially and spectrally. The excellent characteristics of h-BN SPEs, including exceptional emission rate, considerably high Debye-Waller factor, and Fourier transform limited linewidth at room temperature, render strong coupling with the ratio of coupling to decay rates g/max({gamma},k{appa}) predicated as high as 500. This study not only provides insight into the emitter-cavity interaction, but also contributes toward realizing h-BN photonic components, such as low-threshold microcavity lasers and high-purity single photon sources, critical for linear optics quantum computing and quantum networking applications.
Monolayer WSe$_2$ hosts bright single-photon emitters. Because of its compliance, monolayer WSe$_2$ conforms to patterned substrates without breaking, thus creating the potential for large local strain, which is one activation mechanism of its intrinsic quantum emitters. Here, we report an approach to creating spatially and spectrally isolated quantum emitters from WSe$_2$ monolayers with few or no detrimental sources of emission. We show that a bilayer of hexagonal boron nitride (hBN) and WSe$_2$ placed on a nanostructured substrate can be used to create and shape wrinkles that communicate local strain to the WSe$_2$, thus creating quantum emitters that are isolated from substrate features. We compare quantum emitters created directly on top of substrate features with quantum emitters forming along wrinkles and find that the spectra of the latter consist of mainly a single peak and a low background fluorescence. We also discuss possible approaches to controlling emitter position along hBN wrinkles.
Hexagonal Boron Nitride (hBN) mono and multilayers are promising hosts for room temperature single photon emitters (SPEs). In this work we explore high energy (~ MeV) electron irradiation as a means to generate stable SPEs in hBN. We investigate four types of exfoliated hBN flakes - namely, high purity multilayers, isotopically pure hBN, carbon rich hBN multilayers and monolayered material - and find that electron irradiation increases emitter concentrations dramatically in all samples. Furthermore, the engineered emitters are located throughout hBN flakes (not only at flake edges or grain boundaries), and do not require activation by high temperature annealing of the host material after electron exposure. Our results provide important insights into controlled formation of hBN SPEs and may aid in identification of their crystallographic origin.
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