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Register a new userAnomalous Hall effect in non-collinear antiferromagnetic antiperovskite Mn$_{3}$Ni$_{1-x}$Cu$_{x}$N
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We report the anomalous Hall effect (AHE) in antiperovskite Mn$_{3}$NiN with substantial doping of Cu on the Ni site (i.e. Mn$_{3}$Ni$_{1-x}$Cu$_{x}$N), which stabilizes a noncollinear antiferromagnetic (AFM) order compatible with the AHE. Observed on both sintered polycrystalline pieces and single crystalline films, the AHE does not scale with the net magnetization, contrary to the conventional ferromagnetic case. The existence of the AHE is explained through symmetry analysis based on the $Gamma_{rm 4g}$ AFM order in Cu doped Mn$_{3}$NiN. DFT calculations of the intrinsic contribution to the AHE reveal the non-vanishing Berry curvature in momentum space due to the noncollinear magnetic order. Combined with other attractive properties, antiperovskite Mn$_{3}$AN system offers great potential in AFM spintronics.
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We have studied the anomalous Hall effect (AHE) in strained thin films of the frustrated antiferromagnet Mn$_{3}$NiN. The AHE does not follow the conventional relationships with magnetization or longitudinal conductivity and is enhanced relative to that expected from the magnetization in the antiferromagnetic state below $T_{mathrm{N}} = 260$,K. This enhancement is consistent with origins from the non-collinear antiferromagnetic structure, as the latter is closely related to that found in Mn$_{3}$Ir and Mn$_{3}$Pt where a large AHE is induced by the Berry curvature. As the Berry phase induced AHE should scale with spin-orbit coupling, yet larger AHE may be found in other members of the chemically flexible Mn$_{3}A$N structure.
Magnetic susceptibility of the isostructural Ce(Ni{1-x}Cu{x})5 alloys (0< x <0.9) was studied as a function of the hydrostatic pressure up to 2 kbar at fixed temperatures 77.3 and 300 K, using a pendulum-type magnetometer. A pronounced magnitude of the pressure effect is found to be negative in sign and to depend strongly and non-monotonously on the Cu content, showing a sharp maximum in vicinity of x = 0.4. The experimental results are discussed in terms of the Ce valence change under pressure. It has been concluded that the fractional occupation of the f-states, which corresponds to the half-integer valence of Ce ion (3.5), is favorable for the valence instability in alloys studied. For the reference CeNi5 compound the main contributions to magnetic susceptibility and their volume dependence are calculated ab initio within the local spin density approximation (LSDA), and appeared to be in close agreement with experimental data.
This paper reports high resolution X-ray photoelectron spectroscopy (XPS) studies on Fe$_{1-x}$Ni$_x$ (x=0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.9) alloys down to 10 K temperature. Core levels and Auger transitions of the alloys except the invar alloy (x=0.4) exhibit no observable temperature induced changes. The invar alloy exhibits changes in the core levels below 20 K temperature that strongly depend on the core level. Such core level dependent changes with temperature were attributed to the precipitation of spin glass like phase below 20 K only in the invar alloy. Ni L$_3$M$_{45}$M$_{45}$ Auger transition also supported such precipitation below 20 K.
It is well established that the anomalous Hall effect that a ferromagnet displays scales with its magnetization. Therefore, an antiferromagnet that has no net magnetization should exhibit no anomalous Hall effect. Here we show that the non-collinear triangular antiferromagnet Mn3Ge exhibits a large anomalous Hall effect comparable to that of ferromagnetic metals; the magnitude of the anomalous conductivity is 500 per ohm per cm at 2 K and 50 per ohm per cm at room temperature. The angular dependence of the anomalous Hall effect measurements confirm that the small residual in-plane magnetic moment has no role in the observed effect. Our theoretical calculations demonstrate that the large anomalous Hall effect in Mn3Ge originates from a non-vanishing Berry curvature that arises from the chiral spin structure, and which also results in a large spin Hall effect, comparable to that of platinum. The present results pave the way to realize room temperature antiferromagnetic spintronics and spin Hall effect based data storage devices.
We report the growth of noncollinear antiferromagnetic (AFM) Mn$_3$Ni$_{0.35}$Cu$_{0.65}$N films and the orientation-dependent anomalous Hall effect (AHE) of (001) and (111) films due to nonzero Berry curvature. We found that post-annealing at 500$^circ$C can significantly improve the AHE signals, though using the appropriate post-annealing conditions is important. The AHE and magnetization loops show sharp flipping at the coercive field in (111) films, while (001) films are hard to saturate by a magnetic field. The anomalous Hall conductivity of (111) films is an order of magnitude larger than that of (001) films. The present results provide not only a better understanding of the AHE in Mn$_3X$N systems but also further opportunities to study the unique phenomena related to noncollinear AFM.
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