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Register a new userDetection mechanism in highly sensitive ZnO nanowires network gas sensors
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Metal-oxide nanowires are showing a great interest in the domain of gas sensing due to their large response even at a low temperature, enabling low-power gas sensors. However their response is still not fully understood, and mainly restricted to the linear response regime, which limits the design of appropriate sensors for specific applications. Here we analyse the non-linear response of a sensor based on ZnO nanowires network, both as a function of the device geometry and as a response to oxygen exposure. Using an appropriate model, we disentangle the contribution of the nanowire resistance and of the junctions between nanowires in the network. The applied model shows a very good consistency with the experimental data, allowing us to demonstrate that the response to oxygen at room temperature is dominated by the barrier potential at low bias voltage, and that the nanowire resistance starts to play a role at higher bias voltage. This analysis allows us to find the appropriate device geometry and working point in order to optimize the sensitivity. Such analysis is important for providing design rules, not only for sensing devices, but also for applications in electronics and opto-electronics using nanostructures networks with different materials and geometries.
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The optical properties of a stack of GaN/AlN quantum discs (QDiscs) in a GaN nanowire have been studied by spatially resolved cathodoluminescence (CL) at the nanoscale (nanoCL) using a Scanning Transmission Electron Microscope (STEM) operating in spectrum imaging mode. For the electron beam excitation in the QDisc region, the luminescence signal is highly localized with spatial extension as low as 5 nm due to the high band gap difference between GaN and AlN. This allows for the discrimination between the emission of neighbouring QDiscs and for evidencing the presence of lateral inclusions, about 3 nm thick and 20 nm long rods (quantum rods, QRods), grown unintentionally on the nanowire sidewalls. These structures, also observed by STEM dark-field imaging, are proven to be optically active in nanoCL, emitting at similar, but usually shorter, wavelengths with respect to most QDiscs.
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