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Register a new userStructure and electronic properties of the ($sqrt{3}times sqrt{3}$)$R30^{circ}$ SnAu$_2$/Au(111) surface alloy
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We have investigated the atomic and electronic structure of the ($sqrt{3}times sqrt{3}$)$R30^{circ}$ SnAu$_2$/Au(111) surface alloy. Low energy electron diffraction and scanning tunneling microscopy measurements show that the native herringbone reconstruction of bare Au(111) surface remains intact after formation of a long range ordered ($sqrt{3}times sqrt{3}$)$R30^{circ}$ SnAu$_2$2/Au(111) surface alloy. Angle-resolved photoemission and two-photon photoemission spectroscopy techniques reveal Rashba-type spin-split bands in the occupied valence band with comparable momentum space splitting as observed for the Au(111) surface state, but with a hole-like parabolic dispersion. Our experimental findings are compared with density functional theory (DFT) calculation that fully support our experimental findings. Taking advantage of the good agreement between our DFT calculations and the experimental results, we are able to extract that the occupied Sn-Au hybrid band is of (s, d)-orbital character while the unoccupied Sn-Au hybrid bands are of (p, d)-orbital character. Hence, we can conclude that the Rashba-type spin splitting of the hole-like Sn-Au hybrid surface state is caused by the significant mixing of Au d- to Sn s-states in conjunction with the strong atomic spin-orbit coupling of Au, i.e., of the substrate.
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We studied surface and electronic structures of barium stannate (BaSnO$_3$) thin-film by low energy electron diffraction (LEED), and angle-resolved photoemission spectroscopy (ARPES) techniques. BaSnO$_3$/Ba$_{0.96}$La$_{0.04}$SnO$_3$/SrTiO$_3$ (10 nm/100 nm/0.5 mm) samples were grown using pulsed-laser deposition (PLD) method and were emph{ex-situ} transferred from PLD chamber to ultra-high vacuum (UHV) chambers for annealing, LEED and ARPES studies. UHV annealing starting from 300$^{circ}$C up to 550$^{circ}$C, followed by LEED and ARPES measurements show 1$times$1 surfaces with non-dispersive energy-momentum bands. The 1$times$1 surface reconstructs into a $sqrt{2}$$times$$sqrt{2}R45^circ$ one at the annealing temperature of 700$^{circ}$C where the ARPES data shows clear dispersive bands with valence band maximum located around 3.3 eV below Fermi level. While the $sqrt{2}$$times$$sqrt{2}R45^circ$ surface reconstruction is stable under further UHV annealing, it is reversed to 1$times$1 surface by annealing the sample in 400 mTorr oxygen at 600$^{circ}$C. Another UHV annealing at 600$^{circ}$C followed by LEED and ARPES measurements, suggests that LEED $sqrt{2}$$times$$sqrt{2}R45^circ$ surface reconstruction and ARPES dispersive bands are reproduced. Our results provide a better picture of electronic structure of BaSnO$_3$ surface and are suggestive of role of oxygen vacancies in the reversible $sqrt{2}$$times$$sqrt{2}R45^circ$ surface reconstruction.
We explore an alternative way to fabricate (In,Ga)N/GaN short-period superlattices on GaN(0001) by plasma-assisted molecular beam epitaxy. We exploit the existence of an In adsorbate structure manifesting itself by a $(sqrt{3}times!sqrt{3})text{R}30^{circ}$ surface reconstruction observed in-situ by reflection high-energy electron diffraction. This In adlayer accommodates a maximum of 1/3 monolayer of In on the GaN surface and, under suitable conditions, can be embedded into GaN to form an In$_{0.33}$Ga$_{0.67}$N quantum sheet whose width is naturally limited to a single monolayer. Periodically inserting these quantum sheets, we synthesize (In,Ga)N/GaN short-period superlattices with abrupt interfaces and high periodicity as demonstrated by x-ray diffractometry and scanning transmission electron microscopy. The embedded quantum sheets are found to consist of single monolayers with an In content of 0.25-0.29. For a barrier thickness of 6 monolayers, the superlattice gives rise to a photoluminescence band at 3.16 eV, close to the theoretically predicted values for these structures.
This paper was withdrawn by the authors.
We report direct measurements via angle-resolved photoemission spectroscopy (ARPES) of the electronic dispersion of single-layer CoO$_2$. The Fermi contour consists of a large hole pocket centered at the $overline{Gamma}$ point. To interpret the ARPES results, we use density functional theory (DFT) in combination with the multi-orbital Gutzwiller Approximation (DFT+GA), basing our calculations on crystalline structure parameters derived from x-ray photoelectron diffraction and low-energy electron diffraction. Our calculations are in good agreement with the measured dispersion. We conclude that the material is a moderately correlated metal. We also discuss substrate effects, and the influence of hydroxylation on the CoO$_2$ single-layer electronic structure.
There is immense interest in how the local environment influences the electronic structure of materials at the single layer limit. We characterize moire induced spatial variations in the electronic structure of in-situ grown monolayer V2S3 on Au(111) by means of low temperature scanning tunneling microscopy and spectroscopy. We observe a long-range modulation of the integrated local density of states (LDOS), and quantify this modulation with respect to the moire superstructure for multiple orientations of the monolayer with respect to the substrate. Scanning tunneling spectroscopy reveals a prominent peak in the LDOS, which is shifted in energy at different points of the moire superstructure. Comparing ab initio calculations with angle-resolved photoemission, we are able to attribute this peak to bands that exhibit a large out-of-plane d-orbital character. This suggests that the moire driven variations in the measured density of states is driven by a periodic modulation of the monolayer-substrate hybridization.
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