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Register a new userChiral domain walls of Mn$_3$Sn and their memory
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Magnetic domain walls are topological solitons whose internal structure is set by competing energies which sculpt them. In common ferromagnets, domain walls are known to be of either Bloch or Neel types. Little is established in the case of Mn$_3$Sn, a triangular antiferromagnet with a large room-temperature anomalous Hall effect, where domain nucleation is triggered by a well-defined threshold magnetic field. Here, we show that the domain walls of this system generate an additional contribution to the Hall conductivity tensor and a transverse magnetization. The former is an electric field lying in the same plane with the magnetic field and electric current and therefore a planar Hall effect. We demonstrate that in-plane rotation of spins inside the domain wall would explain both observations and the clockwise or anticlockwise chirality of the walls depends on the history of the field orientation and can be controlled.
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In Mn$_3$X (X=Sn, Ge) antiferromagnets domain walls are thick and remarkably complex because of the non-collinear arrangement of spins in each domain. A planar Hall effect (PHE), an electric field perpendicular to the applied current but parallel to the applied magnetic field, was recently observed inside the hysteresis loop of Mn$_3$Sn. The sign of the PHE displayed a memory tuned by the prior orientation of the magnetic field and its history. We present a study of PHE in Mn$_3$Ge extended from room temperature down to 2 K and show that this memory effect can be manipulated by either magnetic field or thermal cycling. We show that the memory can be wiped out if the prior magnetic field exceeds 0.8 T or when the temperature exceeds $T_mathrm{N}$. We also find a detectable difference between the amplitude of PHE with zero-field and field thermal cycling. The ratio between the PHE and the anomalous Hall effect (AHE) decreases slightly as temperature is increased from 2 K to $T_{rm{N}}$, tracks the temperature dependence of magnetization. This erasable memory effect may be used for data storage.
Magneto-structural instability in the ferromagnetic shape memory alloy of composition Ni$_2$Mn$_{1.4}$Sn$_{0.6}$ is investigated by transport and magnetic measurements. Large negative magnetoresistance is observed around the martensitic transition temperature (90-210 K). Both magnetization and magnetoresistance data indicate that upon the application of an external magnetic field at a constant temperature, the sample attains a field-induced arrested state which persists even when the field is withdrawn. We observe an intriguing behavior of the arrested state that it can remember the last highest field it has experienced. The field-induced structural transition plays the key role for the observed anomaly and the observed irreversibility can be accounted by the Landau-type free energy model for the first order phase transition.
Recent experimental studies of magnetic domain expansion under easy-axis drive fields in materials with a perpendicular magnetic anisotropy have shown that the domain wall velocity is asymmetric as a function of an external in plane magnetic field. This is understood as a consequence of the inversion asymmetry of the system, yielding a finite chiral Dzyaloshinskii-Moriya interaction. Numerous attempts have been made to explain these observations using creep theory, but, in doing so, these have not included all contributions to the domain wall energy or have introduced additional free parameters. In this article we present a theory for creep motion of chiral domain walls in the creep regime that includes the most important contributions to the domain-wall energy and does not introduce new free parameters beyond the usual parameters that are included in the micromagnetic energy. Furthermore, we present experimental measurements of domain wall velocities as a function of in-plane field that are well decribed by our model, and from which material properties such as the strength of the Dzyaloshinskii-Moriya interaction and the demagnetization field are extracted.
We study ultrafast x-ray diffraction on the charge density wave (CDW) of SmTe$_3$ using an x-ray free electron laser. The CDW peaks show that photoexcitation with near-infrared pump centered at 800 nm generates domain walls of the order parameter propagating perpendicular to the sample surface. These domain walls break the CDW long range order and suppress the diffraction intensity of the CDW for times much longer than the $sim 1$~ps recovery of the local electronic gap. We reconstruct the spatial and temporal dependence of the order parameter using a simple Ginzburg-Landau model and find good agreement between the experimental and model fluence dependences. Based on the model we find that at long times, depending on the pump fluence, multiple domain walls remain at distances of few nm from the surface.
Chirality in a helimagnetic structure is determined by the sense of magnetic moment rotation. We found that the chiral information did not disappear even after the phase transition to the high-temperature ferromagnetic phase in a helimagnet MnP. The 2nd harmonic resistivity $rho^{rm 2f}$, which reflects the breaking down of mirror symmetry, was found to be almost unchanged after heating the sample above the ferromagnetic transition temperature and cooling it back to the helimagnetic state. The application of a magnetic field along the easy axis in the ferromagnetic state quenched the chirality-induced $rho^{rm 2f}$. This indicates that the chirality memory effect originated from the ferromagnetic domain walls.
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