No Arabic abstract
Current wafer-scale fabrication methods for graphene-based electronics and sensors involve the transfer of single-layer graphene by a support polymer. This often leaves some polymer residue on the graphene, which can strongly impact its electronic, thermal, and mechanical resonance properties. To assess the cleanliness of graphene fabrication methods, it is thus of considerable interest to quantify the amount of contamination on top of the graphene. Here, we present a methodology for direct measurement of the mass of the graphene sheet using quartz crystal microbalances (QCM). By monitoring the QCM resonance frequency during removal of graphene in an oxygen plasma, the total mass of the graphene and contamination is determined with sub-graphene-monolayer accuracy. Since the etch-rate of the contamination is higher than that of graphene, quantitative measurements of the mass of contaminants below, on top, and between graphene layers are obtained. We find that polymer-based dry transfer methods can increase the mass of a graphene sheet by a factor of 10. The presented mass measurement method is conceptually straightforward to interpret and can be used for standardized testing of graphene transfer procedures in order to improve the quality of graphene devices in future applications.
We propose a scheme to measure the mass of a single particle using the nonlinear response of a 2D nanoresonator with degenerate eigenmodes. Using numerical and analytical calculations, we show that by driving a square graphene nanoresonator into the nonlinear regime, simultaneous determination of the mass and position of an added particle is possible. Moreover, this scheme only requires measurements in a narrow frequency band near the fundamental resonance.
Graphene is only one atom thick, optically transparent, chemically inert and an excellent conductor. These properties seem to make this material an excellent candidate for applications in various photonic devices that require conducting but transparent thin films. In this letter we demonstrate liquid crystal devices with electrodes made of graphene which show excellent performance with a high contrast ratio. We also discuss the advantages of graphene compared to conventionally-used metal oxides in terms of low resistivity, high transparency and chemical stability.
Viscosity measurements in combination with pulsed magnetic fields are developed by use of a quartz-crystal microbalance (QCM). When the QCM is immersed in liquid, the resonant frequency, $f_0$, and the quality factor, $Q$, of the QCM change depending on $(rhoeta)^{0.5}$, where $rho$ is the mass density and $eta$ the viscosity. During the magnetic-field pulse, $f_0$ and $Q$ of the QCM are simultaneously measured by a ringdown technique. The typical resolution of $(rhoeta)^{0.5}$ is 0.5 %. As a benchmark, the viscosity of liquid oxygen is measured up to 55 T.
We describe a technique which allows a direct measurement of the relative Fermi energy in an electron system using a double layer structure, where graphene is one of the two layers. We illustrate this method by probing the Fermi energy as a function of density in a graphene monolayer, at zero and in high magnetic fields. This technique allows us to determine the Fermi velocity, Landau level spacing, and Landau level broadening in graphene. We find that the N=0 Landau level broadening is larger by comparison to the broadening of upper and lower Landau levels.
It is generally believed that a Wigner Crystal in single layer graphene can not form because the magnitudes of the Coulomb interaction and the kinetic energy scale similarly with decreasing electron density. However, this scaling argument does not hold for the low energy states in bilayer graphene. We consider the formation of a Wigner Crystal in weakly doped bilayer graphene with an energy gap opened by a perpendicular electric field. We argue that in this system the formation of the Wigner Crystal is not only possible, but different phases of the crystal with very peculiar properties may exist here depending on the system parameters.