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Register a new userSynthetic spin orbit interaction for Majorana devices
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The interplay of superconductivity with a non-trivial spin texture holds promises for the engineering of non-abelian Majorana quasi-particles. A wide class of systems expected to exhibit exotic correlations are based on nanoscale conductors with strong spin-orbit interaction, subject to a strong external magnetic field. The strength of the spin-orbit coupling is a crucial parameter for the topological protection of Majorana modes as it forbids other trivial excitations at low energy. The spin-orbit interaction is in principle intrinsic to a material. As a consequence, experimental efforts have been recently focused on semiconducting nano-conductors or spin-active atomic chains contacted to a superconductor. Alternatively, we show how both a spin-orbit and a Zeeman effect can be autonomously induced by using a magnetic texture coupled to any low dimensional conductor, here a carbon nanotube. Transport spectroscopy through superconducting contacts reveals oscillations of Andreev like states under a change of the magnetic texture. These oscillations are well accounted for by a scattering theory and are absent in a control device with no magnetic texture. A large synthetic spin-orbit energy of about 1.1 meV, larger than the intrinsic spin orbit energy in many other platforms, is directly derived from the number of oscillations. Furthermore, a robust zero energy state, the hallmark of devices hosting localized Majorana modes, emerges at zero magnetic field. Our findings synthetize all the features for the emergence of Majorana modes at zero magnetic field in a controlled, local and autonomous fashion. It could be used for advanced experiments, including microwave spectroscopy and braiding operations, which are at the heart of new schemes of topological quantum computation.
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Strong magnetic field gradients can produce a synthetic spin-orbit interaction that allows for high fidelity electrical control of single electron spins. We investigate how a field gradient impacts the spin relaxation time T_1 by measuring T_1 as a function of magnetic field B in silicon. The interplay of charge noise, magnetic field gradients, phonons, and conduction band valleys leads to a maximum relaxation time of 160 ms at low field, a strong spin-valley relaxation hotspot at intermediate fields, and a B^4 scaling at high fields. T_1 is found to decrease with lattice temperature T_lat as well as with added electrical noise. In comparison, samples without micromagnets have a significantly longer T_1. Optimization of the micromagnet design, combined with reductions in charge noise and electron temperature, may further extend T_1 in devices with large magnetic field gradients.
Spin-orbit torques (SOTs), which rely on spin current generation from charge current in a nonmagnetic material, promise an energy-efficient scheme for manipulating magnetization in magnetic devices. A critical topic for spintronic devices using SOTs is to enhance the charge to spin conversion efficiency. Besides, the current-induced spin polarization is usually limited to in-plane, whereas out-of-plane spin polarization could be favored for efficient perpendicular magnetization switching. Recent advances in utilizing two important classes of van der Waals materials$-$topological insulators and transition-metal dichalcogenides$-$as spin sources to generate SOT shed light on addressing these challenges. Topological insulators such as bismuth selenide have shown a giant SOT efficiency, which is larger than those from three-dimensional heavy metals by at least one order of magnitude. Transition-metal dichalcogenides such as tungsten telluride have shown a current-induced out-of-plane spin polarization, which is allowed by the reduced symmetry. In this review, we use symmetry arguments to predict and analyze SOTs in van der Waal material-based heterostructures. We summarize the recent progress of SOT studies based on topological insulators and transition-metal dichalcogenides and show how these results are in line with the symmetry arguments. At last, we identify unsolved issues in the current studies and suggest three potential research directions in this field.
Majorana modes are zero-energy excitations of a topological superconductor that exhibit non-Abelian statistics. Following proposals for their detection in a semiconductor nanowire coupled to an s-wave superconductor, several tunneling experiments reported characteristic Majorana signatures. Reducing disorder has been a prime challenge for these experiments because disorder can mimic the zero-energy signatures of Majoranas, and renders the topological properties inaccessible. Here, we show characteristic Majorana signatures in InSb nanowire devices exhibiting clear ballistic transport properties. Application of a magnetic field and spatial control of carrier density using local gates generates a zero bias peak that is rigid over a large region in the parameter space of chemical potential, Zeeman energy, and tunnel barrier potential. The reduction of disorder allows us to resolve separate regions in the parameter space with and without a zero bias peak, indicating topologically distinct phases. These observations are consistent with the Majorana theory in a ballistic system, and exclude for the first time the known alternative explanations that invoke disorder or a nonuniform chemical potential.
Spin-orbit interaction (SOI) plays a key role in creating Majorana zero modes in semiconductor nanowires proximity coupled to a superconductor. We track the evolution of the induced superconducting gap in InSb nanowires coupled to a NbTiN superconductor in a large range of magnetic field strengths and orientations. Based on realistic simulations of our devices, we reveal SOI with a strength of 0.15-0.35 eV$require{mediawiki-texvc}AA$. Our approach identifies the direction of the spin-orbit field, which is strongly affected by the superconductor geometry and electrostatic gates.
Electron transfer (ET) in biological molecules such as peptides and proteins consists of electrons moving between well defined localized states (donors to acceptors) through a tunneling process. Here we present an analytical model for ET by tunneling in DNA, in the presence of Spin-Orbit (SO) interaction, to produce a strong spin asymmetry with the intrinsic atomic SO strength in meV range. We obtain a Hamiltonian consistent with charge transport through $pi$ orbitals on the DNA bases and derive the behavior of ET as a function of the injection state momentum, the spin-orbit coupling and barrier length and strength. A highly consistent scenario arises where two concomitant mechanisms for spin selection arises; spin interference and differential spin amplitude decay. High spin filtering can take place at the cost of reduced amplitude transmission assuming realistic values for the spin-orbit coupling. The spin filtering scenario is completed by addressing the spin dependent torque under the barrier, with a consistent conserved definition for the spin current.
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