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Register a new userPlanarized Fabrication Process With Two Layers of SIS Josephson Junctions and Integration of SIS and SFS {pi}-Junctions
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We present our new fabrication Process for Superconductor Electronics (PSE2) that integrates two (2) layers of Josephson junctions in a fully planarized multilayer process on 200-mm wafers. The two junction layers can be, e.g., conventional Superconductor-Insulator-Superconductor (SIS) Nb/Al/AlO_x/Nb junctions with the same or different Josephson critical current densities, J_c. The process also allows integration of high-J_c Superconductor-Ferromagnet-Superconductor (SFS) or SFSS JJs on the first junction layer with Nb/Al/AlO_x/Nb trilayer junctions on the second junction layer, or vice versa. In the present node, the SFS trilayer, Nb/Ni/Nb is placed below the standard SIS trilayer and separated by one niobium wiring layer. The main purpose of integrating the SFS and SIS junction layers is to provide compact {pi}-phase shifters in logic cells of superconductor digital circuits and random access memories, and thereby increase the integration scale and functional density of superconductor electronics. The current node of the two-junction-layer process has six planarized niobium layers, two layers of resistors, and 350-nm minimum feature size. The target Josephson critical current densities for the SIS junctions are 100 {mu}A/{mu}m^2 and 200 {mu}A/{mu}m^2. We present the salient features of the new process, fabrication details, and characterization results on two layers of Josephson junctions integrated into one process, both for the conventional and {pi}-junctions.
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We are developing a superconductor electronics fabrication process with up to nine planarized superconducting layers, stackable stud vias, self-shunted Nb/AlOx-Al/Nb Josephson junctions, and one layer of MoNx kinetic inductors. The minimum feature size of resistors and inductors in the process is 250 nm. We present data on the mutual inductance of Nb stripline and microstrip inductors with linewidth and spacing from 250 nm to 1 {mu}m made on the same or adjacent Nb layers, as well as the data on the linewidth and resistance uniformity.
We present measurements of the current-phase relation (CPR) of Superconductor-Ferromagnet-Superconductor (SFS) Josephson junctions as a function of temperature. The CPR is determined by incorporating the junction into a superconducting loop coupled to a dc SQUID, allowing measurement of the junction phase difference. Junctions fabricated with a thin (~ 22 nm) barrier of Cu0.47Ni0.53 sandwiched between Nb electrodes exhibit a re-entrant critical current with temperature, vanishing at T =T_pi ~ 2-4 K. We find that the critical current is negative for T < T_pi, indicating that the junction is a pi-Josephson junction. We find no evidence for second-order Josephson tunneling near T_pi in the CPR predicted by several theories.
We report that spin supercurrents can be induced in diffusive SFS Josephson junctions without any magnetic misalignment or intrinsic spin orbit coupling. Instead, the pathway to spin triplet generation is provided via geometric curvature, and results in a long ranged Josephson effect. In addition, the curvature is shown to induce a dynamically tunable $0-pi$ transition in the junction. We provide the analytic framework and discuss potential experimental and innovation implications.
Recent progress in superconductor electronics fabrication has enabled single-flux-quantum (SFQ) digital circuits with close to one million Josephson junctions (JJs) on 1-cm$^2$ chips. Increasing the integration scale further is challenging because of the large area of SFQ logic cells, mainly determined by the area of resistively shunted Nb/AlO$_x$-Al/Nb JJs and geometrical inductors utilizing multiple layers of Nb. To overcome these challenges, we are developing a fabrication process with self-shunted high-J$_c$ JJs and compact thin-film MoN$_x$ kinetic inductors instead of geometrical inductors. We present fabrication details and properties of MoN$_x$ films with a wide range of T$_c$, including residual stress, electrical resistivity, critical current, and magnetic field penetration depth {lambda}$_0$. As kinetic inductors, we implemented Mo$_2$N films with T$_c$ about 8 K, {lambda}$_0$ about 0.51 {mu}m, and inductance adjustable in the range from 2 to 8 pH/sq. We also present data on fabrication and electrical characterization of Nb-based self-shunted JJs with AlO$_x$ tunnel barriers and J$_c$ = 0.6 mA/{mu}m$^2$, and with 10-nm thick Si$_{1-x}$Nb$_x$ barriers, with x from 0.03 to 0.15, fabricated on 200-mm wafers by co-sputtering. We demonstrate that the electron transport mechanism in Si$_{1-x}$Nb$_x$ barriers at x < 0.08 is inelastic resonant tunneling via chains of multiple localized states. At larger x, their Josephson characteristics are strongly dependent on x and residual stress in Nb electrodes, and in general are inferior to AlO$_x$ tunnel barriers.
We present a study on low-$T_c$ superconductor-insulator-ferromagnet-superconductor (SIFS) Josephson junctions. SIFS junctions have gained considerable interest in recent years because they show a number of interesting properties for future classical and quantum computing devices. We optimized the fabrication process of these junctions to achieve a homogeneous current transport, ending up with high-quality samples. Depending on the thickness of the ferromagnetic layer and on temperature, the SIFS junctions are in the ground state with a phase drop either 0 or $pi$. By using a ferromagnetic layer with variable step-like thickness along the junction, we obtained a so-called 0-$pi$ Josephson junction, in which 0 and $pi$ ground states compete with each other. At a certain temperature the 0 and $pi$ parts of the junction are perfectly symmetric, i.e. the absolute critical current densities are equal. In this case the degenerate ground state corresponds to a vortex of supercurrent circulating clock- or counterclockwise and creating a magnetic flux which carries a fraction of the magnetic flux quantum $Phi_0$.
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