Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userVibrational and electron-phonon coupling properties of b{eta}-Ga2O3 from first-principles calculations: Impact on the mobility and breakdown field
107
0
0.0
(
0
)
Added by
Emmanouil Kioupakis
Publication date
2019
fields
Physics
and research's language is
English
Ask ChatGPT about the research
No Arabic abstract
The wide band gap semiconductor b{eta}-Ga2O3 shows promise for applications in high-power and high-temperature electronics. The phonons of b{eta}-Ga2O3 play a crucial role in determining its important material characteristics for these applications such as its thermal transport, carrier mobility, and breakdown voltage. In this work, we apply predictive calculations based on density functional theory and density functional perturbation theory to understand the vibrational properties, phonon-phonon interactions, and electron-phonon coupling of b{eta}-Ga2O3. We calculate the directionally dependent phonon dispersion, including the effects of LO-TO splitting and isotope substitution, and quantify the frequencies of the infrared and Raman-active modes, the sound velocities, and the heat capacity of the material. Our calculated optical-mode Gruneisen parameters reflect the anharmonicity of the monoclinic crystal structure of b{eta}-Ga2O3 and help explain its low thermal conductivity. We also evaluate the electron-phonon coupling matrix elements for the lowest conduction band to determine the phonon mode that limits the mobility at room temperature, which we identified as a polar-optical mode with a phonon energy of 29 meV. We further apply these matrix elements to estimate the breakdown field of b{eta}-Ga2O3. Our theoretical characterization of the vibrational properties of b{eta}-Ga2O3 highlights its viability for high-power electronic applications and provides a path for experimental development of materials for improved performance in devices.
rate research
Read More
We present first-principles calculations on bulk CdSe and CdSe nanowires with diameters of up to 22 AA. Density functional linear combination of atomic orbitals and plane wave calculations of the electronic and structural properties are presented and discussed. We use an iterative, symmetry-based method to relax the structures into the ground state. We find that the band gap depends on surface termination. Vibrational properties in the whole Brillouin zone of bulk CdSe and the zone-center vibrations of nanowires are calculated and analyzed. We find strongly size-dependent and nearly constant modes, depending on the displacement directions. A comparison with available experimental Raman data is be given.
We present a method to efficiently combine the computation of electron-electron and electron-phonon self-energies, which enables the evaluation of electron-phonon coupling at the $G_0W_0$ level of theory for systems with hundreds of atoms. In addition, our approach, which is a generalization of a method recently proposed for molecules [J. Chem. Theory Comput. 2018, 14, 6269-6275], enables the inclusion of non-adiabatic and temperature effects at no additional computational cost. We present results for diamond and defects in diamond and discuss the importance of numerically accurate $G_0W_0$ band structures to obtain robust predictions of zero point renormalization (ZPR) of band gaps, and of the inclusion of non-adiabatic effect to accurately compute the ZPR of defect states in the band gap.
The bulk photovoltaic effect (BPVE) refers to current generation due to illumination by light in a homogeneous bulk material lacking inversion symmetry. In addition to the intensively studied shift current, the ballistic current, which originates from asymmetric carrier generation due to scattering processes, also constitutes an important contribution to the overall kinetic model of the BPVE. In this letter, we use a perturbative approach to derive a formula for the ballistic current resulting from the intrinsic electron-phonon scattering in a form amenable to first-principles calculation. We then implement the theory and calculate the ballistic current of the prototypical BPVE material ch{BaTiO3} using quantum-mechanical density functional theory. The magnitude of the ballistic current is comparable to that of shift current, and the total spectrum (shift plus ballistic) agrees well with the experimentally measured photocurrents. Furthermore, we show that the ballistic current is sensitive to structural change, which could benefit future photovoltaic materials design.
Structural phase transitions and soft phonon modes pose a longstanding challenge to computing electron-phonon (e-ph) interactions in strongly anharmonic crystals. Here we develop a first-principles approach to compute e-ph scattering and charge transport in materials with anharmonic lattice dynamics. Our approach employs renormalized phonons to compute the temperature-dependent e-ph coupling for all phonon modes, including the soft modes associated with ferroelectricity and phase transitions. We show that the electron mobility in cubic SrTiO$_{3}$ is controlled by scattering with longitudinal optical phonons at room temperature and with ferroelectric soft phonons below 200~K. Our calculations can accurately predict the temperature dependence of the electron mobility in SrTiO$_{3}$ between 150$-$300~K, and reveal the microscopic origin of its roughly $T^{-3}$ trend. Our approach enables first-principles calculations of e-ph interactions and charge transport in broad classes of crystals with phase transitions and strongly anharmonic phonons.
We develop a method for calculating the electron-phonon vertex in polar semiconductors and insulators from first principles. The present formalism generalizes the Frohlich vertex to the case of anisotropic materials and multiple phonon branches, and can be used either as a post-processing correction to standard electron-phonon calculations, or in conjunction with {it ab initio} interpolation based on maximally localized Wannier functions. We demonstrate this formalism by investigating the electron-phonon interactions in anatase TiO$_2$, and show that the polar vertex significantly reduces the electron lifetimes and enhances the anisotropy of the coupling. The present work enables {it ab initio} calculations of carrier mobilities, lifetimes, mass enhancement, and pairing in polar materials.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
