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Register a new userInterfacial and Electronic Properties of Heterostructures of MXene and Graphene
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MXene-based heterostructures have received considerable interest owing to their unique properties. Herein, we examine various heterostructures of a prototypical MXene and graphene using density functional theory. We find that the adhesion energy, charge transfer, and band structure of these heterostructures are sensitive not only to the surface functional group, but also to the stacking order. Difference in work function dictates the direction and amount of electron transfer across the interface, which causes a shift in the Dirac point of the graphene bands in the heterostructures of monolayer graphene and monolayer MXene. In the heterostructures of bilayer graphene and monolayer MXene, the interface breaks the symmetry of the bilayer graphene; in the case of the AB-stacking bilayer, the electron transfer leads to an interfacial electric field that opens up a gap in the graphene bands at the K point. This internal polarization strengthens both the interfacial adhesions and the cohesion between the two graphene layers. The MXene-graphene-MXene and graphene-MXene-graphene sandwich structures behave as two mirror-symmetric MXene-graphene interfaces. Our first principles studies provide a comprehensive understanding for the interaction between a typical MXene and graphene.
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Hybrid materials of MXenes (2D carbides and nitrides) and transition-metal oxides (TMOs) have shown great promise in electrical energy storage and 2D heterostructures have been proposed as the next-generation electrode materials to expand the limits of current technology. Here we use first principles density functional theory to investigate the interfacial structure, energetics, and electronic properties of the heterostructures of MXenes (Tin+1CnT2; T=terminal groups) and anatase TiO2. We find that the greatest work-function differences are between OH-terminated-MXene (1.6 eV) and anatase TiO2(101) (6.4 eV), resulting in the largest interfacial electron transfer (~0.9 e/nm2 across the interface) from MXene to the TiO2 layer. This interface also has the strongest adhesion and further strengthened by hydrogen bond formation. For O-, F-, or mixed O-/F- terminated Tin+1Cn MXenes, electron transfer is minimal and interfacial adhesion is weak for their heterostructures with TiO2. The strong dependence of the interfacial properties of the MXene/TiO2 heterostructures on the surface chemistry of the MXenes will be useful to tune the heterostructures for electric-energy-storage applications.
Graphite is a well-studied material with known electronic and optical properties. Graphene, on the other hand, which is just one layer of carbon atoms arranged in a hexagonal lattice, has been studied theoretically for quite some time but has only recently become accessible for experiments. Here we demonstrate how single- and multi-layer graphene can be unambiguously identified using Raman scattering. Furthermore, we use a scanning Raman set-up to image few-layer graphene flakes of various heights. In transport experiments we measure weak localization and conductance fluctuations in a graphene flake of about 7 monolayer thickness. We obtain a phase-coherence length of about 2 $mu$m at a temperature of 2 K. Furthermore we investigate the conductivity through single-layer graphene flakes and the tuning of electron and hole densities via a back gate.
The electronic and optical response of Bernal stacked bilayer graphene with geometry modulation and gate voltage are studied. The broken symmetry in sublattices, one dimensional periodicity perpendicular to the domain wall and out-of-plane axis introduces substantial changes of wavefunctions, such as gapless topological protected states, standing waves with bonding and anti-bonding characteristics, rich structures in density of states and optical spectra. The wavefunctions present well-behaved standing waves in pure system and complicated node structures in geometry-modulated system. The optical absorption spectra show forbidden optical excitation channels, prominent asymmetric absorption peaks, and dramatic variations in absorption structures. These results provide that the geometry-modulated structure with tunable gate voltage could be used for electronic and optical manipulation in future graphene-based devices.
We use first-principle density functional theory (DFT) to study the transport properties of single and double barrier heterostructures realized by stacking multilayer h-BN or BC$_{2}$N, and graphene films between graphite leads. The heterostructures are lattice matched. The considered single barrier systems consist of layers of up to five h-BN or BC$_{2}$N monoatomic layers (Bernal stacking) between graphite electrodes. The transmission probability of an h-BN barrier exhibits two unusual behaviors: it is very low also in a classically allowed energy region, due to a crystal momentum mismatch between states in graphite and in the dielectric layer, and it is only weakly dependent on energy in the h-BN gap, because the imaginary part of the crystal momentum of h-BN is almost independent of energy. The double barrier structures consist of h-BN films separated by up to three graphene layers. We show that already five layers of h-BN strongly suppress the transmission between graphite leads, and that resonant tunneling cannot be observed because the energy dispersion relation cannot be decoupled in a vertical and a transversal component.
We present first-principles calculations of silicene/graphene and germanene/graphene bilayers. Various supercell models are constructed in the calculations in order to reduce the strain of the lattice-mismatched bilayer systems. Our energetics analysis and electronic structure results suggest that graphene can be used as a substrate to synthesize monolayer silicene and germanene. Multiple phases of single crystalline silicene and germanene with different orientations relative to the substrate could coexist at room temperature. The weak interaction between the overlayer and the substrate preserves the low-buckled structure of silicene and germanene, as well as their linear energy bands. The gap induced by breaking the sublattice symmetry in silicene on graphene can be up to 57 meV.
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