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Register a new userMn4N ferrimagnetic thin films for sustainable spintronics
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Spintronics, which is the basis of a low-power, beyond-CMOS technology for computational and memory devices, remains up to now entirely based on critical materials such as Co, heavy metals and rare-earths. Here, we show that Mn4N, a rare-earth free ferrimagnet made of abundant elements, is an exciting candidate for the development of sustainable spintronics devices. Mn4N thin films grown epitaxially on SrTiO3 substrates possess remarkable properties, such as a perpendicular magnetisation, a very high extraordinary Hall angle (2%) and smooth domain walls, at the millimeter scale. Moreover, domain walls can be moved at record speeds by spin polarised currents, in absence of spin-orbit torques. This can be explained by the large efficiency of the adiabatic spin transfer torque, due to the conjunction of a reduced magnetisation and a large spin polarisation. Finally, we show that the application of gate voltages through the SrTiO3 substrates allows modulating the Mn4N coercive field with a large efficiency.
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In recent years, antiferromagnetic spintronics has received much attention since ideal antiferromagnets do not produce stray fields and are much more stable to external magnetic fields compared to materials with net magnetization. Akin to antiferromagnets, compensated ferrimagnets have zero net magnetization but have the potential for large spin-polarization and strong out of plane magnetic anisotropy, and, hence, are ideal candidates for high density memory applications. Here, we demonstrate that a fully compensated magnetic state with a tunable magnetic anisotropy is realized in Mn-Pt-Ga based tetragonal Heusler thin films. Furthermore, we show that a bilayer formed from a fully compensated and a partially compensated Mn-Pt-Ga layer, exhibits a large interfacial exchange bias up to room temperature. The present work establishes a novel design principle for spintronic devices that are formed from materials with similar elemental compositions and nearly identical crystal and electronic structures. Such devices are of significant practical value due to their improved properties such as thermal stability. The flexible nature of Heusler materials to achieve tunable magnetizations, and anisotropies within closely matched materials provides a new direction to the growing field of antiferromagnetic spintronics.
The use of epitaxial layers for domain wall-based spintronic applications is often hampered by the presence of pinning sites. Here, we show that when depositing Mn4N(10 nm) epitaxial films, the replacement of MgO(001) by SrTiO3(001) substrates allows minimizing the misfit, and to obtain an improved crystalline quality, a sharper switching, a full remanence, a high anisotropy and remarkable millimeter-sized magnetic domains, with straight and smooth domain walls. In a context of rising interest for current-induced domain wall motion in rare
Single phase nickel-cobalt-titanate thin films with a formula A1+2xTi1-xO3, where A is Ni2+,Co2+ and -0.25<x<1, were grown by pulsed laser deposition on sapphire substrates. There is a large window in which both Ni/Co ratio and x can be chosen independently. In the prototype ilmenite and corundum structures one third of the octahedra are vacant. The reported structure is obtained by filling vacant (x>0) or emptying filled (x<0) octahedra. When x = 1 all octahedra are filled. Two factors controlling the magnetism and crystal distortion are identified. First is a direct overlap between the adjacent cation d-orbitals resulting in a bond formation and magnetic interactions between the cations. This is most clearly revealed as a crystal distortion in the x approximately 0 compositions with approximately equal amounts of Ni and Co: the distortion of the x approximately 0 compound is a function of Ni/Co ratio. The second factor is x, which controls the cation shift towards a vacant octahedron. The displacement decreases and the symmetry increases with decreasing Ti content as was revealed by x-ray diffraction and Raman spectroscopy. When all octahedra are filled the cations prefer octahedron center positions. Also the number density of cations has increased by a factor of 50 percent when compared to the ilmenite structure. The number density ratios of Ni/Co cations between x=1 and x=0 compounds is 3. The Raman and x-ray diffraction data collected on samples with x = 1 or close to 1 are interpreted in terms of P63/mmc space group.
We present experimental control of the magnetic anisotropy in a gadolinium iron garnet (GdIG) thin film from in-plane to perpendicular anisotropy by simply changing the sample temperature. The magnetic hysteresis loops obtained by SQUID magnetometry measurements unambiguously reveal a change of the magnetically easy axis from out-of-plane to in-plane depending on the sample temperature. Additionally, we confirm these findings by the use of temperature dependent broadband ferromagnetic resonance spectroscopy (FMR). In order to determine the effective magnetization, we utilize the intrinsic advantage of FMR spectroscopy which allows to determine the magnetic anisotropy independent of the paramagnetic substrate, while magnetometry determines the combined magnetic moment from film and substrate. This enables us to quantitatively evaluate the anisotropy and the smooth transition from in-plane to perpendicular magnetic anisotropy. Furthermore, we derive the temperature dependent $g$-factor and the Gilbert damping of the GdIG thin film.
Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow developing new classes of magnetic memories and logic devices, in particular based on domain wall (DW) motion. In this work, we report the study of STT driven DW motion in ferrimagnetic manganese nickel nitride (Mn4-xNixN) films, in which a fine adjustment of the Ni content allows setting the magnetic compensation at room temperature. The reduced magnetization, combined with the large spin polarization of conduction electrons, strongly enhances the STT so that domain wall velocities approaching 3000 m/s can be obtained for Ni compositions close to the compensation point. In addition, a reversal of the domain wall motion direction is observed when the magnetic compensation composition is crossed. This striking feature, related to the change of direction of the spin polarization with respect to that of the net magnetization, is clarified by ab initio band structure calculations.
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