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Pairing interaction between fermionic particles leads to composite Bosons that condense at low temperature. Such condensate gives rise to long range order and phase coherence in superconductivity, superfluidity, and other exotic states of matter in the quantum limit. In graphene double-layers separated by an ultra-thin insulator, strong interlayer Coulomb interaction introduces electron-hole pairing across the two layers, resulting in a unique superfluid phase of interlayer excitons. In this work, we report a series of emergent fractional quantum Hall ground states in a graphene double-layer structure, which is compared to an expanded composite fermion model with two-component correlation. The ground state hierarchy from bulk conductance measurement and Hall resistance plateau from Coulomb drag measurement provide strong experimental evidence for a sequence of effective integer quantum Hall effect states for the novel two-component composite fermions (CFs), where CFs fill integer number of effective LLs (Lambda-level). Most remarkably, a sequence of incompressible states with interlayer correlation are observed at half-filled Lambda-levels, which represents a new type of order involving pairing states of CFs that is unique to graphene double-layer structure and beyond the conventional CF model.
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Composite fermions in fractional quantum Hall (FQH) systems are believed to form a Fermi sea of weakly interacting particles at half filling $ u=1/2$. Recently, it was proposed (D. T. Son, Phys. Rev. X 5, 031027 (2015)) that these composite fermions are Dirac particles. In our work, we demonstrate experimentally that composite fermions found in monolayer graphene are Dirac particles at half filling. Our experiments have addressed FQH states in high-mobility, suspended graphene Corbino disks in the vicinity of $ u=1/2$. We find strong temperature dependence of conductivity $sigma$ away from half filling, which is consistent with the expected electron-electron interaction induced gaps in the FQH state. At half filling, however, the temperature dependence of conductivity $sigma(T)$ becomes quite weak as expected for a Fermi sea of composite fermions and we find only logarithmic dependence of $sigma$ on $T$. The sign of this quantum correction coincides with weak antilocalization of composite fermions, which reveals the relativistic Dirac nature of composite fermions in graphene.
Theory predicts that double layer systems realize two-component composite fermions, which are formed when electrons capture both intra- and inter-layer vortices, to produce a wide variety of new strongly correlated liquid and crystal states as a function of the layer separation. Recent experiments in double layer graphene have revealed a large number of layer-correlated fractional quantum Hall states in the lowest Landau level, many of which have not been studied quantitatively in previous theoretical works. We consider the competition between various liquid and crystal states at several of these filling factors (specifically, the states at total filling factors $ u=3/7$, $4/9$, $6/11$, $4/7$, $3/5$, $2/3$, and $4/5$) to determine the theoretical phase diagram as a function of the layer separation. We compare our results with experiments and identify various observed states. In particular, we show that at small layer separations the states at total fillings $ u=3/7$ and $ u=3/5$ are partially pseudospin polarized, where pseudospin refers to the layer index. For certain fractions, such as $ u=3/7$, interlayer correlations are predicted to survive to surprisingly large interlayer separations.
We induce surface carrier densities up to $sim7cdot 10^{14}$cm$^{-2}$ in few-layer graphene devices by electric double layer gating with a polymeric electrolyte. In 3-, 4- and 5-layer graphene below 20-30K we observe a logarithmic upturn of resistance that we attribute to weak localization in the diffusive regime. By studying this effect as a function of carrier density and with ab-initio calculations we derive the dependence of transport, intervalley and phase coherence scattering lifetimes on total carrier density. We find that electron-electron scattering in the Nyquist regime is the main source of dephasing at temperatures lower than 30K in the $sim10^{13}$cm$^{-2}$ to $sim7 cdot 10^{14}$cm$^{-2}$ range of carrier densities. With the increase of gate voltage, transport elastic scattering is dominated by the competing effects due to the increase in both carrier density and charged scattering centers at the surface. We also tune our devices into a crossover regime between weak and strong localization, indicating that simultaneous tunability of both carrier and defect density at the surface of electric double layer gated materials is possible.
When two-dimensional atomic crystals are brought into close proximity to form a van der Waals heterostructure, neighbouring crystals can start influencing each others electronic properties. Of particular interest is the situation when the periodicity of the two crystals closely match and a moire pattern forms, which results in specific electron scattering, reconstruction of electronic and excitonic spectra, crystal reconstruction, and many other effects. Thus, formation of moire patterns is a viable tool of controlling the electronic properties of 2D materials. At the same time, the difference in the interatomic distances for the two crystals combined, determines the range in which the electronic spectrum is reconstructed, and thus is a barrier to the low energy regime. Here we present a way which allows spectrum reconstruction at all energies. By using graphene which is aligned simultaneously to two hexagonal boron nitride layers, one can make electrons scatter in the differential moire pattern, which can have arbitrarily small wavevector and, thus results in spectrum reconstruction at arbitrarily low energies. We demonstrate that the strength of such a potential relies crucially on the atomic reconstruction of graphene within the differential moire super-cell. Such structures offer further opportunity in tuning the electronic spectra of two-dimensional materials.
In the recent advancement in Graphene heterostructures, it is possible to create a double layer tunnel decoupled Graphene system which has strong interlayer electronic interaction. In this work, we restrict the parameters in the Hamiltonian using simple symmetry arguments. We study the ground state of this system in the Hartree-Fock approximation at $ u_1= u_2=0$. In addition to the phases found in monolayer Graphene, we found the existence of layer correlated phase which breaks the layer $U(1)$ symmetry. At non-zero Zeeman coupling strength ($E_z$) this layer correlated state has a small magnetization, which vanishes as $E_z$ goes to zero. We discuss the bulk gapless modes using the Goldstone theorem. We also comment on the edge structure for the layer correlated phase.
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