No Arabic abstract
Vanadium tetracyanoethylene (V[TCNE]$_text{x}$) is an organic-based ferrimagnet that exhibits robust magnetic ordering (T$_text{C}$ of over 600 K), high quality-factor (high-Q) microwave resonance (Q up to 3,500), and compatibility with a wide variety of substrates and encapsulation technologies. Here, we substantially expand the potential scope and impact of this emerging material by demonstrating the ability to produce engineered nanostructures with tailored magnetic anisotropy that serve as a platform for the exploration of cavity magnonics, revealing strongly coupled quantum confined standing wave modes that can be tuned into and out of resonance with an applied magnetic field. Specifically, time-domain micromagnetic simulations of these nanostructures faithfully reproduce the experimentally measured spectra, including the quasi-uniform mode and higher-order spin-wave (magnon) modes. Finally, when the two dominant magnon modes present in the spectra are brought into resonance by varying the orientation of the in-plane magnetic field, we observe anti-crossing behavior indicating strong coherent coupling between these two magnon modes at room temperature. These results position V[TCNE]$_text{x}$ as a leading candidate for the development of coherent magnonics, with potential applications ranging from microwave electronics to quantum information.
The interaction between a spin polarized dc electrical current and spin wave modes of a cylindrical nanowire is investigated in this report. We found that close to the critical current, the uniform mode is suppressed, while the edge mode starts to propagate into the sample. When the current exceeds the critical value, this phenomenon is even more accentuated. The edge mode becomes the uniform mode of the nanowire. The higher spin wave modes are slowly pushed away by the current until the propagating mode remains.
We report on the direct observation of spin wave and elastic wave emission from magnetic domain walls in ferromagnetic thin films. Driven by alternating homogeneous magnetic fields the magnetic domain walls act as coherent magnetisation wave sources. Directional and low damped elastic waves below and above the ferromagnetic resonance are excited. The wave vector of the magnetoelastically induced acoustic shear waves is linearly tuned by varying the excitation frequency. Domain wall emitted magnetostatic surface spin waves occur at higher frequencies, which characteristics are confirmed by micromagnetic simulations. The distinct modes of magnetisation wave excitation from micromagnetic objects are a general physical phenomenon relevant for dynamic magnetisation processes in structured magnetic films. Magnetic domain walls can act as reconfigurable antennas for spin wave and elastic wave generation with control of the wave orientation.
We investigate the dynamic nuclear polarization from the hyperfine interaction between nonequilibrium electronic spins and nuclear spins coupled to them in semiconductor nanostructures. We derive the time and position dependence of the induced nuclear spin polarization and dipolar magnetic fields. In GaAs/AlGaAs parabolic quantum wells the nuclear spin polarization can be as high as 80% and the induced nuclear magnetic fields can approach a few gauss with an associated nuclear resonance shift of the order of kHz when the electronic system is 100% spin polarized. These fields and shifts can be tuned using small electric fields. We discuss the implications of such control for optical nuclear magnetic resonance experiments in low-dimensional semiconductor nanostructures.
The electronic wavefunctions of an atom or molecule are affected by its interactions with its environment. These interactions dictate electronic and optical processes at interfaces, and is especially relevant in the case of thin film optoelectronic devices such as organic solar cells. In these devices, charge transport and interfaces between multiple layers occur along the thickness or vertical direction, and thus such electronic interactions are crucial in determining the device properties. Here, we introduce a new in-situ spectroscopic ellipsometry data analysis method called DART with the ability to directly probe electronic coupling due to intermolecular interactions along the thickness direction using vacuum-deposited organic semiconductor thin films as a model system. The analysis, which does not require any model fitting, reveals direct observations of electronic coupling between frontier orbitals under optical excitations leading to delocalization of the corresponding electronic wavefunctions with thickness or, equivalently, number of molecules away from the interface in C60 and MeO-TPD deposited on an insulating substrate (SiO2). Applying the same methodology for C60 deposited on phthalocyanine thin films, the analyses shows strong, anomalous features - in comparison to C60 deposited on SiO2 - of the electronic wavefunctions corresponding to specific excitation energies in C60 and phthalocyanines. Translation of such interactions in terms of dielectric constants reveals plasmonic type resonance absorptions resulting from oscillations of the excited state wavefunctions between the two materials across the interface. Finally, reproducibility, angstrom-level sensitivity and simplicity of the method are highlighted showcasing its applicability for studying electronic coupling between any vapor-deposited material systems where real-time measurements during deposition are possible.