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Register a new user2D THz spectroscopic investigation of ballistic conduction-band electron dynamics in InSb
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Using reflective cross-polarized 2D THz time-domain spectroscopy in the range of 1-12 THz, we follow the trajectory of the out-of-equilibrium electron population in the low-bandgap semiconductor InSb. The 2D THz spectra show a set of distinct features at combinations of the plasma-edge and vibration frequencies. Using finite difference time domain simulations combined with a tight binding model of the band structure, we assign these features to electronic nonlinearities and show that the nonlinear response in the first picoseconds is dominated by coherent ballistic motion of the electrons. We demonstrate that this technique can be used to investigate the landscape of the band curvature near the Gamma-point as illustrated by the observation of anisotropy in the (100)-plane.
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In the analysis of the heavy electron systems, theoretical models with c-f hybridization gap are often used. We point out that such a gap does not exist and the simple picture with the hybridization gap is misleading in the metallic systems, and present a correct picture by explicitly constructing an effective band model of YbAl_3. Hamiltonian consists of a nearly free electron model for conduction bands which hybridize with localized f-electrons, and includes only a few parameters. Density of states, Sommerfeld coefficient, f-electron number and optical conductivity are calculated and compared with the band calculations and the experiments.
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