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Register a new userAb-initio calculation of band alignments for opto-electronic simulations
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Added by
Jan Oliver Oelerich
Publication date
2019
fields
Physics
and research's language is
English
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A modified core-to-valence band maximum approach is applied to calculate band offsets of strained III/V semiconductor hetero junctions. The method is used for the analysis of (In,Ga)As/GaAs/Ga(As,Sb) multi-quantum well structures. The obtained offsets and the resulting bandstructure are used as input for the microscopic calculation of photoluminescence spectra yielding very good agreement with recent experimental results.
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