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Amplification of surface plasmons in graphene-black phosphorus injection laser heterostructures

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 Added by V. Ryzhii
 Publication date 2019
  fields Physics
and research's language is English




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We propose and evaluate the heterostructure based on the graphene-layer (GL) with the lateral electron injection from the side contacts and the hole vertical injection via the black phosphorus layer (PL) (p$^+$PL-PL-GL heterostructure). Due to a relatively small energy of the holes injected from the PL into the GL (about 100 meV, smaller than the energy of optical phonons in the GL which is about 200 meV), the hole injection can effectively cool down the two-dimensional electron-hole plasma in the GL. This simplifies the realization of the interband population inversion and the achievement of the negative dynamic conductivity in the terahertz (THz) frequency range enabling the amplification of the surface plasmon modes. The later can lead to the plasmon lasing. The conversion of the plasmons into the output radiation can be used for a new types of the THz sources.



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It is by now well established that high-quality graphene enables a gate-tunable low-loss plasmonic platform for the efficient confinement, enhancement, and manipulation of optical fields spanning a broad range of frequencies, from the mid infrared to the Terahertz domain. While all-electrical detection of graphene plasmons has been demonstrated, electrical plasmon injection (EPI), which is crucial to operate nanoplasmonic devices without the encumbrance of a far-field optical apparatus, remains elusive. In this work, we present a theory of EPI in double-layer graphene, where a vertical tunnel current excites acoustic and optical plasmon modes. We first calculate the power delivered by the applied inter-layer voltage bias into these collective modes. We then show that this system works also as a spectrally-resolved molecular sensor.
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