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Register a new userElectronic structure and transport in amorphous metal oxide and amorphous metal oxy-nitride semiconductors
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Recently amorphous oxide semiconductors (AOS) have gained commercial interest due to their low-temperature processability, high mobility and areal uniformity for display backplanes and other large area applications. A multi-cation amorphous oxide (a-IGZO) has been researched extensively and is now being used in commercial applications. It is proposed in the literature that overlapping In-5s orbitals form the conduction path and the carrier mobility is limited due to the presence of multiple cations which create a potential barrier for the electronic transport in a-IGZO semiconductors. A multi-anion approach towards amorphous semiconductors has been suggested to overcome this limitation and has been shown to achieve hall mobilities up to an order of magnitude higher compared to multi-cation amorphous semiconductors. In the present work, we compare the electronic structure and electronic transport in a multi-cation amorphous semiconductor, a-IGZO and a multi-anion amorphous semiconductor, a-ZnON using computational methods. Our results show that in a-IGZO, the carrier transport path is through the overlap of outer s-orbitals of mixed cations and in a-ZnON, the transport path is formed by the overlap of Zn-4s orbitals, which is the only type of metal cation present. We also show that for multi-component ionic amorphous semiconductors, electron transport can be explained in terms of orbital overlap integral which can be calculated from structural information and has a direct correlation with the carrier effective mass which is calculated using computationally expensive first principle DFT methods.
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The charge transport mechanism in amorphous oxide semiconductors (AOS) is a matter of controversial debates. Most theoretical studies so far neglected the percolation nature of the phenomenon. In this article, a recipe for theoretical description of charge transport in AOSs is formulated using the percolation arguments. Comparison with the previous theoretical studies shows a superiority of the percolation approach. The results of the percolation theory are compared to experimental data obtained in various InGaZnO materials revealing parameters of the disorder potential in such AOS.
The structure of amorphous materials-continuous random networks (CRN) vs. CRN containing randomly dispersed crystallites-has been debated for decades. In two-dimensional (2D) materials, this question can be addressed more directly. Recently, controlled experimental conditions and atomic-resolution imaging found that monolayer amorphous carbon (MAC) is a CRN containing random graphene nanocrystallites. Here we report Monte Carlo simulations of the structure evolution of monolayer amorphous boron nitride (ma-BN) and demonstrate that it also features distorted sp2-bonding, but it has a purely CRN structure. The key difference is that, at low temperatures, C atoms easily form hexagons, whereas the probability to form canonical B-N-B-N-B-N hexagons is very low. On the other hand, hexagons have lower energy than non-hexagons, which results in hexagonal CRN regions that grow much like nanocrystallites in MAC. The net conclusion is that two distinct forms of amorphous structure are possible in 2D materials. The as-generated ma-BN is stable at room-temperature and insulating.
By means of theoretical modeling and experimental synthesis and characterization, we investigate the structural properties of amorphous Zr-Si-C. Two chemical compositions are selected, Zr0.31Si0.29C0.40 and Zr0.60Si0.33C0.07. The amorphous structures are generated in the theoretical part of our work, by the stochastic quenching (SQ) method, and detailed comparison is made as regards structure and density of the experimentally synthesized films. These films are analyzed experimentally using X-ray absorption spectroscopy, transmission electron microscopy and X-ray diffraction. Our results demonstrate for the first time a remarkable agreement between theory and experiment concerning bond distances and atomic coordination of this complex amorphous metal carbide. The demonstrated power of the SQ method opens up avenues for theoretical predictions of amorphous materials in general.
High finesse optical cavities of current interferometric gravitational-wave detectors are significantly limited in sensitivity by laser quantum noise and coating thermal noise. The thermal noise is associated with internal energy dissipation in the materials that compose the test masses of the interferometer. Our understanding of how the internal friction is linked to the amorphous material structure is limited due to the complexity of the problem and the lack of studies that span over a large range of materials. We present a systematic investigation of amorphous metal oxide and Ta$_2$O$_5$-based mixed oxide coatings to evaluate their suitability for low Brownian noise experiments. It is shown that the mechanical loss of metal oxides is correlated to their amorphous morphology, with continuous random network materials such as SiO$_2$ and GeO$_2$ featuring the lowest loss angles. We evaluated different Ta$_2$O$_5$-based mixed oxide thin films and studied the influence of the dopant in the optical and elastic properties of the coating. We estimated the thermal noise associated with high-reflectance multilayer stacks that employ each of the mixed oxides as the high index material. We concluded that the current high index material of TiO$_2$-doped Ta$_2$O$_5$ is the optimal choice for reduced thermal noise among Ta$_2$O$_5$-based mixed oxide coatings with low dopant concentrations.
Wide-bandgap perovskite stannates are of interest for the emergent all-oxide transparent electronic devices due to their unparalleled room temperature electron mobility. Considering the advantage of amorphous material in integrating with non-semiconductor platforms, we herein reported the optical and electronic properties in the prototypical stannate, amorphous barium stannate (BaSnO3) thin films, which were deposited at room temperature and annealed at various temperatures. Despite remaining amorphous status, with increasing the annealing temperature, the defect level within amorphous BaSnO3 thin films could be suppressed.
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