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Register a new userShedding light on the monolayer-WSe2 excitons nature by optical effective-mass measurements
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Two-dimensional excitons formed in quantum materials such as monolayer transition-metal dichalcogenides and their strong light-matter interaction have attracted unrivalled attention by the research community due to their extraordinarily large oscillator strength as well as binding energy, and the inherent spin-valley locking. Semiconducting few-layer and monolayer materials with their sharp optical resonances such as WSe2 have been extensively studied and envisioned for applications in the weak as well as strong light-matter coupling regimes, for effective nano-laser operation with various different structures, and particularly for valleytronic nanophotonics motivated by the circular dichroism. Many of these applications, which may benefit heavily from the two-dimensional electronic quasiparticles properties in such films, require controlling, manipulating and first of all understanding the nature of the optical resonances that are attributed to exciton modes. While theory and previous experiments have provided unique methods to the characterization and classification efforts regarding the band structure and optical modes in 2D materials, here, we directly measure the quasiparticle energy-momentum dispersion for the first time. Our results for single-layer WSe2 clearly indicate an emission regime predominantly governed by free excitons, i.e. Coulomb-bound electron-hole pairs with centre-of-mass momentum and corresponding effective mass. Besides uniquely evidencing the existence of free excitons at cryogenic temperatures optically, the fading of the dispersive character for increased temperatures or excitation densities reveals a transition to a regime with profound role of charge-carrier plasma or localized excitons regarding its emission, debunking the myth of free-exciton emission at elevated temperatures.
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Two-dimensional (2D) materials, such as graphene1, boron nitride2, and transition metal dichalcogenides (TMDs)3-5, have sparked wide interest in both device physics and technological applications at the atomic monolayer limit. These 2D monolayers can be stacked together with precise control to form novel van der Waals heterostructures for new functionalities2,6-9. One highly coveted but yet to be realized heterostructure is that of differing monolayer TMDs with type II band alignment10-12. Their application potential hinges on the fabrication, understanding, and control of bonded monolayers, with bound electrons and holes localized in individual monolayers, i.e. interlayer excitons. Here, we report the first observation of interlayer excitons in monolayer MoSe2-WSe2 heterostructures by both photoluminescence and photoluminescence excitation spectroscopy. The energy and luminescence intensity of interlayer excitons are highly tunable by an applied vertical gate voltage, implying electrical control of the heterojunction band-alignment. Using time resolved photoluminescence, we find that the interlayer exciton is long-lived with a lifetime of about 1.8 ns, an order of magnitude longer than intralayer excitons13-16. Our work demonstrates the ability to optically pump interlayer electric polarization and provokes the immediate exploration of interlayer excitons for condensation phenomena, as well as new applications in 2D light-emitting diodes, lasers, and photovoltaic devices.
Due to degeneracies arising from crystal symmetries, it is possible for electron states at band edges (valleys) to have additional spin-like quantum numbers. An important question is whether coherent manipulation can be performed on such valley pseudospins, analogous to that routinely implemented using true spin, in the quest for quantum technologies. Here we show for the first time that SU(2) valley coherence can indeed be generated and detected. Using monolayer semiconductor WSe2 devices, we first establish the circularly polarized optical selection rules for addressing individual valley excitons and trions. We then reveal coherence between valley excitons through the observation of linearly polarized luminescence, whose orientation always coincides with that of any linearly polarized excitation. Since excitons in a single valley emit circularly polarized photons, linear polarization can only be generated through recombination of an exciton in a coherent superposition of the two valleys. In contrast, the corresponding photoluminescence from trions is not linearly polarized, consistent with the expectation that the emitted photon polarization is entangled with valley pseudospin. The ability to address coherence, in addition to valley polarization, adds a critical dimension to the quantum manipulation of valley index necessary for coherent valleytronics.
Light-emitting diodes are of importance for lighting, displays, optical interconnects, logic and sensors. Hence the development of new systems that allow improvements in their efficiency, spectral properties, compactness and integrability could have significant ramifications. Monolayer transition metal dichalcogenides have recently emerged as interesting candidates for optoelectronic applications due to their unique optical properties. Electroluminescence has already been observed from monolayer MoS2 devices. However, the electroluminescence efficiency was low and the linewidth broad due both to the poor optical quality of MoS2 and to ineffective contacts. Here, we report electroluminescence from lateral p-n junctions in monolayer WSe2 induced electrostatically using a thin boron nitride support as a dielectric layer with multiple metal gates beneath. This structure allows effective injection of electrons and holes, and combined with the high optical quality of WSe2 it yields bright electroluminescence with 1000 times smaller injection current and 10 times smaller linewidth than in MoS2. Furthermore, by increasing the injection bias we can tune the electroluminescence between regimes of impurity-bound, charged, and neutral excitons. This system has the required ingredients for new kinds of optoelectronic devices such as spin- and valley-polarized light-emitting diodes, on-chip lasers, and two-dimensional electro-optic modulators.
Several theoretical predictions have claimed that the neutral exciton of TMDCs splits into a transversal and longitudinal exciton branch, with the longitudinal one, which is the upper branch, exhibiting an extraordinary strong dispersion in the meV range within the light cone. Historically, this was linked for semiconductor quantum wells to strong far-field optical dipole coupling, or strong electronic long-range exchange interactions, describing two sides of the same coin. Recently, experiments utilizing Fourier-space spectroscopy have shown that the exciton (exciton-polariton) dispersion can indeed be measured for high-quality hexagonal-BN-encapsulated WSe2 monolayer samples and can confirm the energy scale. Here, the exciton fine-structures pseudo-spin and the valley polarization are investigated as a function of the centre-of-mass-momentum and excitation-laser detuning. For quasi-resonant excitation, a strong dispersion featuring a pronounced momentum-dependent helicity is observed. By increasing the excitation energy step-wise towards and then above the electronic band gap, the dispersion and the helicity systematically decrease due to contributions of incoherent excitons and emission from plasma. The decline of the helicity with centre-of-mass momentum can be phenomenologically modelled by the Maialle-Silva-Sham mechanism using the exciton splitting as the source of an effective magnetic field.
The presence of two spin-split valleys in monolayer (1L) transition metal dichalcogenide (TMD) semiconductors supports versatile exciton species classified by their spin and valley quantum numbers. While the spin-0 intravalley exciton, known as the bright exciton, is readily observable, other types of excitons, such as the spin-1 intravalley (spin-dark) and spin-0 intervalley (momentum-dark) excitons, are more difficult to access. Here we develop a waveguide coupled 1L tungsten diselenide (WSe2) device to probe these exciton species. In particular, TM coupling to the atomic layers out-of-plane dipole moments enabled us to not only efficiently collect, but also resonantly populate the spin-1 dark excitons, promising for developing devices with long valley lifetimes. Our work reveals several upconversion processes that bring out an intricate coupling network linking spin-0 and spin-1 intra- and inter-valley excitons, demonstrating that intervalley scattering and spin-flip are very common processes in the atomic layer. These experimental results deepen our understanding of tungsten diselenide exciton physics and illustrate that planar photonic devices are capable of harnessing versatile exciton species in TMD semiconductors.
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