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Register a new userThermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well
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The thermoelectric response of HgTe quantum wells in the state of two-dimensional topological insulator (2D TI) has been studied experimentally. Ambipolar thermopower, typical for an electron-hole system, has been observed across the charge neutrality point, where the carrier type changes from electrons to holes according to the resistance measurements. The hole-type thermopower is much stronger than the electron-type one. The thermopower linearly increases with temperature. We present a theoretical model which accounts for both the edge and bulk contributions to the electrical conductivity and thermoelectric effect in a 2D TI, including the effects of edge to bulk leakage. The model, contrary to previous theoretical studies, demonstrates that the 2D TI is not expected to show anomalies of thermopower near the band conductivity threshold, which is consistent with our experimental results. Based on the experimental data and theoretical analysis, we conclude that the observed thermopower is mostly of the bulk origin, while the resistance is determined by both the edge and bulk transport.
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The two-dimensional topological insulator phase has been observed previously in single HgTe-based quantum wells with inverted subband ordering. In double quantum wells (DQWs), coupling between the layers introduces additional degrees of freedom leading to a rich phase picture. By studying local and nonlocal resistance in HgTe-based DQWs, we observe both the gapless semimetal phase and the topological insulator phase, depending on parameters of the samples and according to theoretical predictions. Our work establishes the DQWs as a promising platform for realization of multilayer topological insulators.
The microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well with an inverted spectrum has been experimentally studied under irradiation at frequencies of 110-169 GHz. Two mechanisms of formation of this photoresistance have been revealed. The first mechanism is due to transitions between the dispersion branches of edge current states, whereas the second mechanism is caused by the action of radiation on the bulk of the quantum well.
We have measured the differential resistance in a two-dimensional topological insulator (2DTI) in a HgTe quantum well, as a function of the applied dc current. The transport near the charge neutrality point is characterized by a pair of counter propagating gapless edge modes. In the presence of an electric field, the energy is transported by counter propagating channels in the opposite direction. We test a hot carrier effect model and demonstrate that the energy transfer complies with the Wiedemann Franz law near the charge neutrality point in the edge transport regime.
From the analysis of the cyclotron resonance, we experimentally obtain the band structure of the three-dimensional topological insulator based on a HgTe thin film. Top gating was used to shift the Fermi level in the film, allowing us to detect separate resonance modes corresponding to the surface states at two opposite film interfaces, the bulk conduction band, and the valence band. The experimental band structure agrees reasonably well with the predictions of the $mathbf{kcdot p}$ model. Due to the strong hybridization of the surface and bulk bands, the dispersion of the surface states is close to parabolic in the broad range of the electron energies.
We analyze thermally induced spin and charge transport in HgTe/CdTe quantum wells on the basis of the numerical non-equilibrium Greens function technique in the linear response regime. In the topologically non-trivial regime, we find a clear signature of the gap of the edge states due to their finite overlap from opposite sample boundaries -- both in the charge Seebeck and spin Nernst signal. We are able to fully understand the physical origin of the thermoelectric transport signatures of edge and bulk states based on simple analytical models. Interestingly, we derive that the spin Nernst signal is related to the spin Hall conductance by a Mott-like relation which is exact to all orders in the temperature difference between the warm and the cold reservoir.
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